Semiconductor device structures including silicon-containing dielectric materials

Patent metadata

Field	Value
Publication number	US-10468595-B2
Application number	US-201816164510-A
Country	US
Kind code	B2
Filing date	Oct 18, 2018
Priority date	Jul 1, 2013
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.

First claim

What is claimed is:

1. A semiconductor device comprising:
stacks separated from one another by a distance of from 180 Å to 200 Å; and
at least one conformal silicon-containing dielectric material adjacent to each of the stacks.

2. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises at least one of a silicon oxide material, a silicon nitride material, a silicon carbon nitride material, or a silicon carbon oxide material.

3. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises at least one of a silicon oxide material or a silicon nitride material.

4. The semiconductor device of claim 3 , wherein the at least one conformal silicon-containing dielectric material further comprises carbon.

5. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises from 30% to 70% silicon, from 4% to 25% carbon, and from 5% to 66% oxygen.

6. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises from 30% to 70% silicon, from 4% to 25% carbon, and from 5% to 66% nitrogen.

7. The semiconductor device of claim 1 , wherein the stacks comprise at least one of a chalcogenide material or a carbon material.

8. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises a thickness of from 10 Å to 1000 Å.

9. A semiconductor device comprising:
stacks comprising a carbon material, the stacks separated from one another by a distance of from 50 Å to 220 Å; and
at least one conformal silicon-containing dielectric material in contact with the stacks.

10. The semiconductor device of claim 9 , wherein the at least one conformal silicon-containing dielectric material comprises silicon oxide or silicon dioxide.

11. The semiconductor device of claim 10 , wherein the at least one conformal silicon-containing dielectric material further comprises carbon.

12. The semiconductor device of claim 9 , wherein the stacks further comprise a chalcogenide material.

13. The semiconductor device of claim 9 , wherein the at least one conformal silicon-containing dielectric material comprises a first conformal silicon-containing dielectric material in contact with the stacks and a second conformal silicon-containing dielectric material in contact with the first conformal silicon-containing dielectric material.

14. The semiconductor device of claim 13 , further comprising a third conformal silicon-containing dielectric material in contact with the second conformal silicon-containing dielectric material.

15. The semiconductor device of claim 14 , wherein:
the first conformal silicon-containing dielectric material comprises a silicon carbon nitride material;
the second conformal silicon-containing dielectric material comprises one of a silicon oxide material, a silicon nitride material, or a silicon carbon oxide material; and
the third conformal silicon-containing dielectric material comprises one of the silicon oxide material, the silicon nitride material, or the silicon carbon oxide material, the second conformal silicon-containing dielectric material and the third conformal silicon-containing dielectric material comprising different materials.

16. The semiconductor device of claim 14 , wherein the first conformal silicon-containing dielectric material comprises a silicon carbon nitride material, the second conformal silicon-containing dielectric material comprises a silicon nitride material, and the third conformal silicon-containing dielectric material comprises a silicon carbon oxide material.

17. The semiconductor device of claim 9 , wherein the at least one conformal silicon-containing dielectric material decreases the distance between the stacks.

18. A semiconductor device comprising:
stacks separated from one another by a distance of from 50 Å to 220 Å; and
at least one conformal silicon-containing dielectric material contacting the stacks, the at least one conformal silicon-containing dielectric material comprising from 30% to 70% silicon, from 4% to 25% carbon, and from 5% to 66% oxygen.

19. The semiconductor device of claim 18 , wherein the at least one conformal silicon-containing dielectric material directly contacts the stacks.

Assignees

• Micron Technology Inc

Inventors

• Omstead Thomas R
• Franklin Cole S

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6922 Primary

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title