Dose-based end-pointing for low-kV FIB milling TEM sample preparation

Patent metadata

Field	Value
Publication number	US-10465293-B2
Application number	US-201213600843-A
Country	US
Kind code	B2
Filing date	Aug 31, 2012
Priority date	Aug 31, 2012
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

A method, system, and computer-readable medium for forming transmission electron microscopy sample lamellae using a focused ion beam including directing a high energy focused ion beam toward a bulk volume of material; milling away the unwanted volume of material to produce an unfinished sample lamella with one or more exposed faces having a damage layer; characterizing the removal rate of the focused ion beam; subsequent to characterizing the removal rate, directing a low energy focused ion beam toward the unfinished sample lamella for a predetermined milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and milling the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer to produce the finished sample lamella including at least a portion of the feature of interest.

First claim

We claim as follow:

1. A method for forming a transmission electron microscopy sample lamella using a focused ion beam, the method comprising:
directing a high energy focused ion beam toward a bulk volume of material, the bulk volume of material including a feature of interest and a volume of material to be removed, to mill away the volume of material to be removed;
milling away the volume of material to be removed with the high energy focused ion beam to produce an unfinished sample lamella having a thickness that is greater than the desired thickness of a finished sample lamella, one or more faces of the unfinished sample lamella including a damage layer;
characterizing the material removal rate of a low energy focused ion beam by measuring the material removal rate of the low energy focused ion beam on a material;
subsequent to characterizing the material removal rate of the low energy focused ion beam, directing the low energy focused ion beam toward one or more of the exposed faces of the unfinished sample lamella for a predetermined pattern milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and
milling the one or more exposed faces of the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer, thereby producing the finished sample lamella having a planar surface and including at least a portion of the feature of interest; and
wherein milling the one or more exposed faces of the unfinished sample lamella with the low energy focused ion beam includes performing a box mill around the unfinished sample lamella with a size that is larger than the intended final thickness of the finished sample lamella, the box mill surrounding the finished sample lamella on all four sides.

2. The method of claim 1 , in which characterizing the material removal rate of the low energy focused ion beam further comprises measuring the beam current of the low energy focused ion beam and determining a calibrated beam current.

3. The method of claim 2 , in which the dose of ions per area is dependent on the calibrated beam current, an area of the region in which the pattern is milled, and the predetermined pattern milling time used by the low energy focused ion beam.

4. The method of claim 1 , in which the high energy focused ion beam and the low energy focused ion beam are emitted from the same focused ion beam column.

5. The method of claim 1 , in which the high energy focused ion beam has a landing energy greater than eight kiloelectronvolts (8 keV).

6. The method of claim 1 , in which the low energy focused ion beam has a landing energy less than eight kiloelectronvolts (8 keV).

7. The method of claim 1 , in which the high energy focused ion beam has a landing energy greater than or equal to thirty kiloelectronvolts (30 keV).

8. The method of claim 1 , in which the low energy focused ion beam has a landing energy between two and five kiloelectronvolts (2-5 keV).

9. The method of claim 1 , in which milling the unfinished sample lamella with the low energy focused ion beam is performed without human intervention.

10. The method of claim 1 , in which the focused ion beam is directed at an angle that is not parallel with the plane of the lamella.

11. The method of claim 1 , in which the substrate comprises a single-crystalline material.

12. The method of claim 11 , in which the single-crystalline material comprises silicon.

13. The method of claim 1 , in which the focused ion beam is directed at a nonzero incident angle relative to the plane of the lamella.

14. The method of claim 13 , in which the focused ion beam is directed at an angle relative to the plane of the lamella that is substantially forty-five (45) degrees.

15. The method of claim 13 , in which the focused ion beam or the sample or both is rotated about an axis normal to the sample surface prior to milling the unfinished sample lamella.

16. The method of claim 1 , further comprising:
producing a first set of one or more lamellae, each lamella in the set receiving a first specified dose of ions per area delivered by the low energy focused ion beam;
measuring one or more characteristics of the first set of lamellae at a point in time after or at a point in time during the process of milling the set of lamellae;
recording the one or more measured characteristics of first set of lamellae;
calculating a second specified dose of ions per area for the low energy focused ion beam based on the difference between an intended lamella characteristic and the one or more measured characteristics of the first set of lamellae;
producing a second set of one or more lamellae using a second pattern milling time to deliver the second specified dose of ions per area for the low energy focused ion beam.

17. The method of claim 16 , in which a person manually observes the one or more characteristics of the first set of lamellae and the person provides an adjustment factor used in calculating the second specified dose.

18. The method of claim 16 , in which a machine vision algorithm measures the one or more characteristics of the first set of lamellae, and the one or more measured characteristics of the first set of lamellae is used to calculate an adjustment factor used in determining the second specified dose.

19. A system for forming a transmission electron microscopy sample lamella comprising:
a focused ion beam column
a sample stage;
a sample disposed on or within the sample stage;
a programmable controller programmed with computer instructions that, when executed by a computer processor, causes the system to automatically:
direct a high energy focused ion beam toward a bulk volume of material, the bulk volume of material including a feature of interest and a volume of material to be removed, to mill away the volume of material to be removed;
mill away the volume of material to be removed with the high energy focused ion beam to produce an unfinished sample lamella having a thickness that is greater than the desired thickness of a finished sample lamella, one or more exposed faces of the unfinished sample lamella including a damage layer;
characterize the material removal rate of a low energy focused ion beam at a specified time prior to directing the low energy focused ion beam toward one or more of the exposed faces of the unfinished sample lamella;
subsequent to characterizing the material removal rate of the low energy focused ion beam, direct the low energy focused ion beam toward one or more of the exposed faces of the unfinished sample lamella for a predetermined pattern milling time to deliver a specified dose of ions per area from the low energy focused ion beam;
mill the one or more exposed faces of the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer, thereby producing the finished sample lamella including at least a portion of the feature of interest;
wherein causing the system to mill the one or more exposed faces of the unfinished sample lamella with the low energy focused ion beam includes performing a box mill by directing the low energy ion beam at an angle of incidence less than 90 degrees toward the one or more face of the unfinished sample lamella, the box mill having a size that is larger than the one or more faces of the finished sample lamella, and
in which the system characterizes the material removal rate of the low energy focused ion beam by measuring the material removal rate of the low energy focused ion beam

Assignees

• Miller Thomas G
• Arjavac Jason
• Moriarty Michael
• Fei Co

Inventors

• Miller Thomas G
• Arjavac Jason
• Moriarty Michael

Classifications

• H01J37/3023

  Program control · CPC title

• H01J2237/31745

  for preparing specimen to be viewed in microscopes or analyzed in microanalysers · CPC title

• H01J2237/30466

  Detecting endpoint of process · CPC title

• H01J37/3056

  for microworking, e. g. etching of gratings or trimming of electrical components · CPC title

• G01N1/32 Primary

  Polishing; Etching · CPC title