Substrate polishing method, top ring, and substrate polishing apparatus

US10464185B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10464185-B2
Application numberUS-201715458513-A
CountryUS
Kind codeB2
Filing dateMar 14, 2017
Priority dateMar 15, 2016
Publication dateNov 5, 2019
Grant dateNov 5, 2019

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

According to one embodiment, a substrate polishing method includes: conveying a substrate to a position above a polishing pad by sucking the substrate by a first region of an elastic film; polishing the substrate while bringing the substrate into contact with the polishing pad; and lifting off the substrate by sucking the substrate by a second region of the elastic film, the second region being larger than the first region.

First claim

Opening claim text (preview).

What is claimed is: 1. A substrate polishing method comprising: conveying a substrate to a position above a polishing pad by suctioning the substrate by a first region of an elastic film, wherein regions other than the first region are not suctioned; polishing the substrate while bringing the substrate into contact with the polishing pad; and lifting off the substrate by suctioning the substrate by a second region of the elastic film, the second region being larger than the first region. 2. A substrate polishing method comprising: conveying a substrate to a position above a polishing pad by depressurizing a first area among pressure adjustable areas between a top-ring main body and an elastic film to suction the substrate by a lower surface of the elastic film, wherein no suction is applied to areas other than the first area; polishing the substrate while bringing the substrate into contact with the polishing pad; and lifting off the substrate by depressurizing a second area among the pressure adjustable areas to suction the substrate by the lower surface of the elastic film, the second area being larger than the first area. 3. The substrate polishing method according to claim 2 , wherein the plurality of pressure adjustable areas are formed between the top-ring main body and the elastic film, the first area comprises a first number of areas among the plurality of areas, and the second area comprises a second number of areas among the plurality of areas, the second number being larger than the first number. 4. The substrate polishing method according to claim 3 , wherein the second area is concentrically larger than the first area. 5. The substrate polishing method according to claim 3 , wherein the first area is a circular or annular area. 6. The substrate polishing method according to claim 2 , wherein upon polishing the substrate, at least part of the pressure adjustable areas is pressurized. 7. The substrate polishing method according to claim 2 , wherein a supporter extending toward the elastic film is provided in the pressure adjustable area. 8. A substrate polishing apparatus comprising: a top ring; a polishing table having a polishing pad configured to contact the substrate retained by the top ring to polish the substrate; and a pressure controller configured to control a pressure of the pressure adjustable areas, wherein the top ring comprises: the top-ring main body; an elastic film below the top-ring main body and configured to form one or a plurality of pressure adjustable areas between the top-ring main body and the elastic film; and a supporter in the area extending toward the elastic film, and wherein the pressure controller is configured to depressurize a first area among the pressure adjustable areas when the substrate is conveyed before the substrate is polished, wherein areas other than the first area are not depressurized, and depressurize a second area among the pressure adjustable areas when the substrate is lifted off from the polishing pad after the substrate is polished, second area being larger than the first area.

Assignees

Inventors

Classifications

  • Retaining rings · CPC title

  • Lapping pads for working plane surfaces · CPC title

  • B24B37/042Primary

    operating processes therefor · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10464185B2 cover?
According to one embodiment, a substrate polishing method includes: conveying a substrate to a position above a polishing pad by sucking the substrate by a first region of an elastic film; polishing the substrate while bringing the substrate into contact with the polishing pad; and lifting off the substrate by sucking the substrate by a second region of the elastic film, the second region being…
Who is the assignee on this patent?
Ebara Corp
What technology area does this patent fall under?
Primary CPC classification B24B37/042. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Nov 05 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).