Template and template manufacturing method

Patent metadata

Field	Value
Publication number	US-10459335-B2
Application number	US-201715698025-A
Country	US
Kind code	B2
Filing date	Sep 7, 2017
Priority date	Mar 14, 2017
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

According to an embodiment, a template is provided which includes a template substrate, and a device formation pattern and an alignment mark provided on a common surface of the template substrate. The alignment mark includes a refraction layer provided at a bottom of a first concave pattern provided on the template substrate, and an insulating layer filling the first concave pattern provided with the refraction layer.

First claim

What is claimed is:

1. A template comprising:
a template substrate; and
a device formation pattern and an alignment mark provided on a common surface of the template substrate,
wherein the alignment mark includes
a refraction layer provided at a bottom of a first concave pattern provided on the template substrate, and
an insulating layer filling the first concave pattern provided with the refraction layer, and

the refraction layer is made of an organic film, or at least one material selected from the group consisting of Cr, Ta, Ti, Ru, TiN, TaO, TaN and SiN.

2. The template according to claim 1 , wherein, in the alignment mark, a plurality of first concave patterns that extend are arrayed in a direction intersecting with an extending direction.

3. The template according to claim 1 , wherein
the alignment mark further includes a second concave pattern that connects to each other one-end portions of the plurality of first concave patterns, and
a boundary interface between the first concave patterns and the second concave pattern is covered with the insulating layer.

4. The template according to claim 3 , wherein the first concave patterns have a depth that is equal to a depth of a third concave pattern composing the device formation pattern or larger than the depth of the third concave pattern.

5. The template according to claim 3 , wherein, where H denotes a thickness of the refraction layer and D denotes a thickness of the insulating layer inside the first concave pattern, the D and the H have a relationship therebetween that satisfies
10 nm≤D<20 nm with 160 nm≤H≤620 nm,
20 nm≤D<30 nm with 150 nm≤H≤620 nm,
30 nm≤D<40 nm with 140 nm≤H≤620 nm,
40 nm≤D<50 nm with 120 nm≤H≤620 nm, or
50 nm≤D≤200 nm with 100 nm≤H≤600 nm.

6. The template according to claim 1 , wherein the refraction layer has a refractive index different from a refractive index of the template substrate.

7. A template comprising:
a template substrate; and
a device formation pattern and an alignment mark provided on a common surface of the template substrate,
wherein the alignment mark includes
a refraction layer provided at a bottom of a first concave pattern provided on the template substrate, and
an insulating layer filling the first concave pattern provided with the refraction layer, and

where H denotes a thickness of the refraction layer and D denotes a thickness of the insulating layer inside the first concave pattern, the D and the H have a relationship therebetween that satisfies
10 nm≤D<20 nm with 160 nm≤H≤620 nm,
20 nm≤D<30 nm with 150 nm≤H≤620 nm,
30 nm≤D<40 nm with 140 nm≤H≤620 nm,
40 nm≤D<50 nm with 120 nm≤H≤620 nm, or
50 nm≤D≤200 nm with 100 nm≤H≤600 nm.

Assignees

• Toshiba Memory Corp

Inventors

• Komukai Toshiaki

Classifications

• H10P76/202

  for lift-off processes · CPC title

• G03F9/7042

  Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting (non-exposure lithographic processes per se G03F7/0002) · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G03F1/80

  Etching · CPC title

• G03F1/56

  Organic absorbers, e.g. of photo-resists · CPC title