Laser welded glass packages

US10457595B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10457595-B2
Application numberUS-201515522198-A
CountryUS
Kind codeB2
Filing dateOct 29, 2015
Priority dateOct 31, 2014
Publication dateOct 29, 2019
Grant dateOct 29, 2019

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  1. Title

    What the patent document calls the invention.

  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of forming a sealed device comprising providing a first substrate having a first surface, providing a second substrate adjacent the first substrate, and forming a weld between an interface of the first substrate and the adjacent second substrate, wherein the weld is characterized by ((σtensile stress location)/(σinterface laser weld))<<1 or <1 and σinterface laser weld>10 MPa or >1 MPa where σtensile stress location is the stress present in the first substrate and σinterface laser weld is the stress present at the interface. This method may be used to manufacture a variety of different sealed packages.

First claim

Opening claim text (preview).

We claim: 1. An apparatus comprising: a first substrate having a first surface; an inorganic film formed over the first surface of the first substrate; a second substrate adjacent the first substrate, wherein the inorganic film is between the first substrate and the second substrate; and a weld formed by the inorganic film at an interface between the first substrate and the adjacent second substrate bonding the first substrate and the second substrate, wherein the weld is characterized by ( σ tensile ⁢ ⁢ stress ⁢ ⁢ location σ interface ⁢ ⁢ laser ⁢ ⁢ weld ) < 1 and σ tensile laser weld >1 MPa wherein σ tensile stress location is the stress present in the first substrate and σ tensile laser weld is the stress present at the interface, wherein each of the inorganic film, the first substrate and the second substrate are transmissive at approximately 420 nm to approximately 750 nm. 2. An apparatus comprising: a first substrate having a first surface; an inorganic film formed over the first surface of the first substrate; a second substrate adjacent the first substrate, wherein the inorganic film is between the first substrate and the second substrate; and a weld formed by the inorganic film at an interface between the first substrate and the adjacent second substrate bonding the first substrate and the second substrate, wherein the weld is characterized by ( σ tensile ⁢ ⁢ stress ⁢ ⁢ location σ interface ⁢ ⁢ laser ⁢ ⁢ weld ) ⪡ 1 and σ interface laser weld >10 MPa wherein σ tensile stress location is the stress present in the first substrate and σ tensile laser weld is the stress present at the interface, wherein each of the inorganic film, the first substrate and the second substrate are transmissive at approximately 420 nm to approximately 750 nm. 3. The apparatus of claim 2 or 1 further comprising: a device protected between the first substrate and the second substrate wherein the inorganic film is in contact with the second substrate. 4. The apparatus of claim 3 , wherein absorption by the inorganic film is more than 10% at a predetermined laser wavelength. 5. The apparatus of claim 3 , wherein the composition of the inorganic film is selected from the group consisting of SnO 2 , ZnO, TiO 2 , ITO, Zn, Ti, Ce, Pb, Fe, Va, Cr, Mn, Mg, Ge, SnF 2 , ZnF 2 and combinations thereof. 6. The apparatus of claim 3 , wherein the composition of the inorganic film is selected to lower the activation energy for inducing creep flow of the first substrate, the second substrate, or both the first and second substrates. 7. The apparatus of claim 3 , wherein the composition of the inorganic film is laser absorbing low liquidus temperature material with a liquidus temperature less than or equal to about 1000° C. 8. The apparatus of claim 3 , wherein the composition of the inorganic film comprises: 20-100 mol % SnO; 0-50 mol % SnF 2 ; and 0-30 mol % P 2 O 5 or B 2 O 3 . 9. The apparatus of claim 3 , wherein the inorganic film and the first and second substrates have a combined internal transmission of more than 80% at approximately 420 nm to approximately 750 nm.

Assignees

Inventors

Classifications

  • containing fluorine and phosphorus · CPC title

  • Oxides (C03C17/02 takes precedence) · CPC title

  • containing phosphorus · CPC title

  • Fluorides · CPC title

  • C03C27/10Primary

    with the aid of adhesive specially adapted for that purpose · CPC title

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What does patent US10457595B2 cover?
A method of forming a sealed device comprising providing a first substrate having a first surface, providing a second substrate adjacent the first substrate, and forming a weld between an interface of the first substrate and the adjacent second substrate, wherein the weld is characterized by ((σtensile stress location)/(σinterface laser weld))<<1 or <1 and σinterface laser weld>10 MPa or >1 MPa…
Who is the assignee on this patent?
Corning Inc
What technology area does this patent fall under?
Primary CPC classification C03C27/10. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 29 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 10 related publications on this page (citations in our corpus or others sharing the same primary CPC).