Boron nitride material and method of preparation thereof

Patent metadata

Field	Value
Publication number	US-10457553-B2
Application number	US-201716068590-A
Country	US
Kind code	B2
Filing date	Jan 9, 2017
Priority date	Jan 8, 2016
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron nitride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and triethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nanotubes and porous foam.

First claim

The invention claimed is:

1. A method of preparing a boron nitride material, the method comprising
providing a substrate, wherein the substrate is a metallic substrate or graphene or a substrate having one or more carbon nanotubes, and
sublimating an amine borane complex onto the substrate, the amine borane complex having general formula
R 3 N.BX 3 ,

wherein
X at each occurrence is independently selected from the group consisting of hydrogen and a halogen, and R at each occurrence is independently a linear or branched, unsubstituted alkyl with 1 to 20 carbon atoms; and
wherein the sublimating is carried out (i) at a temperature of about 50° C. or less to obtain a boron nitride material consisting essentially of boron nitride, or (ii) at a temperature of greater than about 50° C. and less than about 100° C. to obtain a boron nitride material doped with about 2 wt % to about 5 wt % carbon, or (iii) at a temperature in the range of about 100° C. to about 200° C. to obtain a boron nitride composite comprising one or more domains of boron nitride and carbon.

2. The method according to claim 1 , wherein the boron nitride material is a boron nitride nanotube.

3. The method according to claim 2 , wherein providing the substrate comprises providing a substrate having a layer of a metal in discrete particulate form arranged on a support.

4. The method according to claim 2 , wherein providing the substrate comprises providing a substrate having one or more carbon nanotubes.

5. The method according to claim 4 , further comprising removing the one or more carbon nanotubes by annealing the substrate following sublimating of the amine borane complex onto the substrate in an environment containing oxygen at a temperature in the range of about 400° C. to about 700° C.

6. The method according to claim 1 , wherein providing the substrate comprises providing a layer of a metal arranged on a porous support to form the boron nitride material as a porous boron nitride material.

7. The method according to claim 6 , further comprising removing the substrate by subjecting the substrate to an etching process following sublimating of the amine borane complex onto the substrate.

8. The method according to claim 1 , wherein providing the substrate comprises providing a layer of a metal in continuous form arranged on a support to form the boron nitride material as a boron nitride film.

9. The method according to claim 8 , further comprising removing the substrate by subjecting the substrate to an electrochemical delamination process following sublimating of the amine borane complex onto the substrate.

10. The method according to claim 1 , wherein providing the substrate comprises annealing the substrate in an inert environment at a temperature of about 700° C. or more.

11. The method according to claim 1 , further comprising carrying out the sublimating of the amine borane complex onto the substrate for a time period in the range from about 5 minutes to about 20 minutes to form the boron nitride material as a monolayer on the substrate.

12. The method according to claim 1 , wherein the boron nitride material consisting essentially of boron nitride or doped with about 2 wt % to about 5 wt % carbon comprises one or more single-crystal domains, wherein each of the one or more single-crystal domains has a maximal dimension of 100 μm or more.

13. The method according to claim 1 , wherein the boron nitride material consisting essentially of boron nitride is a crystalline film.

14. The method according to claim 1 , wherein the boron nitride material doped with about 2 wt % to about 5 wt % carbon is a crystalline film.

Assignees

• Univ Nanyang Tech

Inventors

• Tay Yingjie Roland
• Li Hongling
• Tsang Siu Hon
• Teo Hang Tong Edwin

Classifications

• C04B2235/5284

  Hollow fibers, e.g. nanotubes · CPC title

• C04B2235/5288

  Carbon nanotubes · CPC title

• C30B29/403

  AIII-nitrides · CPC title

• C30B25/02

  Epitaxial-layer growth · CPC title

• C23C16/0227

  by cleaning or etching · CPC title