Die with integrated microphone device using through-silicon vias (TSVs)

Patent metadata

Field	Value
Publication number	US-10455308-B2
Application number	US-201415502495-A
Country	US
Kind code	B2
Filing date	Sep 17, 2014
Priority date	Sep 17, 2014
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.

First claim

What is claimed is:

1. An apparatus comprising:
a semiconductor substrate having a first side and a second side opposite to the first side;
an interconnect layer on the first side of the semiconductor substrate;
a first through-silicon via (TSV) through the semiconductor substrate, the first TSV to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate;
a microphone device on the second side of the semiconductor substrate and electrically coupled with the first TSV;
a device layer on the first side of the semiconductor substrate, wherein the first TSV is to route electrical signals between an active device of the device layer and the microphone device; and
a second TSV to structurally support the microphone device, wherein the second TSV is not to route electrical signals between the device layer and the microphone device.

2. The apparatus of claim 1 , wherein the microphone device comprises:
a back-plate on the second side of the semiconductor substrate and coupled with the first TSV; and
a membrane film coupled with the back-plate to form a capacitor.

3. The apparatus of claim 2 , wherein the microphone device further comprises:
a chamber in the semiconductor substrate adjacent to the membrane film.

4. The apparatus of claim 2 , further comprising:
a lid to cover the microphone device.

5. The apparatus of claim 4 , further comprising:
a passivation layer on the second side of the semiconductor substrate, wherein the passivation layer is between at least a portion of the back-plate and the semiconductor substrate; and
a cavity layer on the passivation layer and having a cavity formed in the cavity layer, wherein the membrane film is in the cavity and the lid is coupled with the cavity layer.

6. The apparatus of claim 4 , wherein the lid includes a sound port hole.

7. The apparatus of claim 4 , further comprising a flip-chip substrate including a sound port hole, wherein:
the semiconductor substrate is part of a die that is coupled with the flip-chip substrate in a flip-chip configuration;
the lid is coupled with the flip-chip substrate to form a cavity;
the die is within the cavity; and
the sound port hole provides access for sound to the cavity.

8. The apparatus of claim 1 , wherein:
the semiconductor substrate is part of a first die;
the first die is coupled with a second die; and
the second die includes receiver or sensor circuitry of the microphone device.

9. The apparatus of claim 1 , wherein the microphone device is one of a plurality of microphone devices on the second side of the semiconductor substrate.

10. A computing device comprising:
a circuit board; and
a die electrically coupled with the circuit board, the die including:
a semiconductor substrate having a first side and a second side opposite to the first side;
an interconnect layer on the first side of the semiconductor substrate;
a first through-silicon via (TSV) through the semiconductor substrate, the first TSV to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate;
a microphone device on the second side of the semiconductor substrate and electrically coupled with the first TSV;
a device layer on the first side of the semiconductor substrate, wherein the first TSV is to route electrical signals between an active device of the device layer and the microphone device; and
a second TSV to structurally support the microphone device, wherein the second TSV is not to route electrical signals between the device layer and the microphone device.

11. The computing device of claim 10 , wherein:
the die is coupled with a package substrate; and
the package substrate is coupled with the circuit board.

12. The computing device of claim 10 , wherein:
the computing device is a mobile computing device including one or more of an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, a Geiger counter, an accelerometer, a gyroscope, a speaker, and a camera.

13. The computing device of claim 10 , wherein the microphone device comprises:
a back-plate on the second side of the semiconductor substrate and coupled with the first TSV; and
a membrane film coupled with the back-plate to form a capacitor.

14. The computing device of claim 13 , wherein the microphone device further comprises:
a chamber in the semiconductor substrate adjacent to the membrane film.

15. The computing device of claim 13 , further comprising:
a lid to cover the microphone device.

16. The computing device of claim 15 , further comprising:
a passivation layer on the second side of the semiconductor substrate, wherein the passivation layer is between at least a portion of the back-plate and the semiconductor substrate; and
a cavity layer on the passivation layer and having a cavity formed in the cavity layer, wherein the membrane film is in the cavity and the lid is coupled with the cavity layer.

17. The computing device of claim 15 , wherein the lid includes a sound port hole.

18. The computing device of claim 15 , further comprising a flip-chip substrate including a sound port hole, wherein:
the die is coupled with the flip-chip substrate in a flip-chip configuration;
the lid is coupled with the flip-chip substrate to form a cavity;
the die is within the cavity; and
the sound port hole provides access for sound to the cavity.

19. An apparatus comprising:
a semiconductor substrate having a first side and a second side opposite to the first side;
an interconnect layer on the first side of the semiconductor substrate;
a through-silicon via (TSV) through the semiconductor substrate, the TSV to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate;
a microphone device on the second side of the semiconductor substrate and electrically coupled with the TSV, wherein the microphone device comprises:
a back-plate on the second side of the semiconductor substrate and coupled with the TSV; and
a membrane film coupled with the back-plate to form a capacitor;

a lid to cover the microphone device;
a passivation layer on the second side of the semiconductor substrate, wherein the passivation layer is between at least a portion of the back-plate and the semiconductor substrate; and
a cavity layer on the passivation layer and having a cavity formed in the cavity layer, wherein the membrane film is in the cavity and the lid is coupled with the cavity layer.

20. The apparatus of claim 19 , wherein the microphone device further comprises:
a chamber in the semiconductor substrate adjacent to the membrane film.

21. The apparatus of claim 19 , wherein the lid includes a sound port hole.

Assignees

• Intel Corp

Inventors

• Lee Kevin J
• Saraswat Ruchir
• Zillmann Uwe
• Rao Valluri Bob
• Lund-Larsen Tor
• Cowley Nicholas P

Classifications

• H10W76/17

  characterised by their materials · CPC title

• H10W76/60

  Seals · CPC title

• H10W76/10

  Containers or parts thereof · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title