Oxide thin film transistor display substrate, manufacturing method thereof, and display device

Patent metadata

Field	Value
Publication number	US-10453966-B2
Application number	US-201815971089-A
Country	US
Kind code	B2
Filing date	May 4, 2018
Priority date	Oct 19, 2017
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

The present disclosure provides in some embodiments an oxide TFT display substrate, a manufacture method thereof and a display device. The oxide TFT display substrate includes a first region at least corresponding to a semiconducting region of an oxide TFT and a second region other than the first region. The method includes steps of: forming, after the formation of the oxide TFT, a SiON layer at least covering the first region; and forming a SiNx layer covering the second region.

First claim

What is claimed is:

1. A method for manufacturing an oxide thin film transistor (TFT) display substrate, the oxide TFT display substrate comprising a first region at least corresponding to a semiconducting region of an oxide TFT and a second region other than the first region, the method comprising:
providing a base substrate with the oxide TFT and one or more common electrode lines, the oxide TFT including a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode sequentially formed on the base substrate, an orthogonal projection of the active layer onto the base substrate falling within an orthogonal projection of the gate electrode onto the base substrate, the one or more common electrode lines being arranged at a layer identical to the gate electrode and being of a slit-like shape;
forming a passivation layer covering the oxide TFT and comprising a SiON layer, the SiON layer at least covering the first region;
forming a pixel electrode and a common electrode on the passivation layer, the common electrode being connected to the one or more common electrode lines through a first via-hole penetrating through the gate insulation layer and the passivation layer, the pixel electrode being connected to the drain electrode through a second via-hole penetrating through the passivation layer;
applying a photoresist onto the base substrate with the pixel electrode and the common electrode, and exposing a portion of the photoresist not shielded by the gate electrode from a side of the base substrate away from the oxide TFT;
developing the photoresist so as to remove the portion of the photoresist not shielded by the gate electrode and reserve a portion of the photoresist shielded by the gate electrode;
depositing a layer of SiNx, a portion of the first via-hole being filled with the layer of SiNx; and
removing the remaining photoresist and the layer of SiNx on the remaining photoresist
forming a SiNx layer only covering the second region.

2. The method according to claim 1 , wherein the forming the SiON layer at least covering the first region comprises forming the SiON layer covering both the first region and the second region.

3. The method according to claim 1 , wherein prior to the forming the SiNx layer covering the second region, the method further comprises forming the first via-hole having a depth greater than a predetermined threshold in the oxide TFT display substrate, wherein the SiNx layer is filled into the first via-hole in the meantime of forming the SiNx layer covering the second region.

4. The method according to claim 1 , wherein the SiNx layer is deposited at a temperature of less than 250° C.

5. An oxide thin film transistor (TFT) display substrate, comprising:
a first region at least corresponding to a semiconducting region of an oxide TFT and a second region other than the first region;
a base substrate;
the oxide TFT and one or more common electrode lines arranged on the base substrate, the oxide TFT including a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode sequentially formed on the base substrate, an orthogonal projection of the active layer onto the base substrate falling within an orthogonal projection of the gate electrode onto the base substrate, the one or more common electrode lines being arranged at a layer identical to the gate electrode and being of a slit-like shape;
a passivation layer covering the oxide TFT and including a SiON layer;
the SiON layer arranged on the oxide TFT and at least covering the first region;
a pixel electrode and a common electrode arranged on the passivation layer, the common electrode being connected to the one or more common electrode lines through a first via-hole penetrating through the gate insulation layer and the passivation layer, the pixel electrode being connected to the drain electrode through a second via-hole penetrating through the passivation layer; and
a SiNx layer arranged on the passivation layer and covering the second region, an orthogonal projection of the SiNx layer onto the base substrate not overlapping the orthogonal projection of the gate electrode onto the base substrate.

6. The oxide TFT display substrate according to claim 5 , wherein the SiON layer covers both the first region and the second region.

7. The oxide TFT display substrate according to claim 5 , wherein the first via-hole having a depth greater than a predetermined threshold is formed in the oxide TFT display substrate, and a portion of the first via-hole is filled with the SiNx layer.

8. The oxide TFT display substrate according to claim 5 , wherein the passivation layer further comprises a SiOx layer arranged between the oxide TFT and the SiON layer.

9. The oxide TFT display substrate according to claim 5 , wherein an organic resin layer made of an organic photosensitive material and having a thickness of about 4000 Å to 30000 Å is coated onto the passivation layer, and then exposed and developed, so as to form a pattern of the passivation layer with the first via-hole and the second via-hole through a single etching process.

10. The oxide TFT display substrate according to claim 9 , wherein an organic resin layer having a thickness of about 4000 Å to 30000 Å and made of benzocyclobutene (BCB) is coated onto the passivation layer, and then exposed and developed, so as to form a pattern of the passivation layer with the first via-hole and the second via-hole through a single etching process.

11. A display device, comprising an oxide thin film transistor (TFT) display substrate, wherein the oxide TFT display substrate comprises:
a first region at least corresponding to a semiconducting region of an oxide TFT and a second region other than the first region;
a base substrate;
the oxide TFT and one or more common electrode lines arranged on the base substrate, the oxide TFT including a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode sequentially formed on the base substrate, an orthogonal projection of the active layer onto the base substrate falling within an orthogonal projection of the gate electrode onto the base substrate, the one or more common electrode lines being arranged at a layer identical to the gate electrode and being of a slit-like shape;
a passivation layer covering the oxide TFT and including a SiON layer;
the SiON layer arranged on the oxide TFT and at least covering the first region;
a pixel electrode and a common electrode arranged on the passivation layer, the common electrode being connected to the one or more common electrode lines through the first via-hole penetrating through the gate insulation layer and the passivation layer, the pixel electrode being connected to the drain electrode through a second via-hole penetrating through the passivation layer; and
a SiNx layer arranged on the passivation layer and covering the second region, an orthogonal projection of the SiNx layer onto the base substrate not overlapping the orthogonal projection of the gate electrode onto the base substrate.

12. The display device according to claim 11 , wherein the SiON layer covers both the first region and the second region.

13. The display device according to claim 11 , wherein the first via-hole having a depth greater than a predetermined threshold is formed in the oxide TFT display substrate, and a portion of the first via-hole is filled with the SiNx layer.

14. The display device according to claim 11 , wherein the passivation layer further comprises a SiOx layer arranged between the oxide TFT and the SiON layer.

Assignees

• Boe Technology Group Co Ltd
• Fuzhou Boe Optoelectronics Tech Co Ltd

Inventors

• Liu Xiaowei
• Meng Fanqing
• Wang Yang
• An Yabin
• Fan Zhiyong
• Wu Chenglong

Classifications

• G02F2201/121

  common or background · CPC title

• G02F2201/123

  pixel · CPC title

• G02F1/136286

  Wiring, e.g. gate line, drain line · CPC title

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• H01L27/124

  Electricity · mapped topic