Methods of providing semiconductor devices and semiconductor devices thereof

Patent metadata

Field	Value
Publication number	US-10453893-B2
Application number	US-201715829551-A
Country	US
Kind code	B2
Filing date	Dec 1, 2017
Priority date	Jun 2, 2015
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

Some embodiments include a method. The method can include: providing a carrier substrate; forming a first device material over the carrier substrate; and after forming the first device material over the carrier substrate, transforming the first device material into a second device material. Meanwhile, the transforming the first device material into the second device material can include: causing a cationic exchange in the first device material; and causing an anionic exchange in the first device material. The causing the cationic exchange in the first device material and the causing the anionic exchange in the first device material can occur approximately simultaneously. Other embodiments of related methods and systems are also disclosed.

First claim

What is claimed is:

1. A method comprising:
providing a carrier substrate;
forming a first device material over the carrier substrate; and
after forming the first device material over the carrier substrate, transforming the first device material into a second device material;
wherein:
transforming the first device material into the second device material comprises:
causing a cationic exchange in the first device material; and
causing an anionic exchange in the first device material;

and
causing the cationic exchange in the first device material and causing the anionic exchange in the first device material occur approximately simultaneously.

2. The method of claim 1 further comprising:
exposing the carrier substrate to a first temperature;
wherein:
exposing the carrier substrate to the first temperature and forming the first device material over the carrier substrate occur approximately simultaneously;
transforming the first device material into the second device material further comprises:
exposing the carrier substrate to a second temperature;

and
exposing the carrier substrate to the second temperature comprises:
causing the cationic exchange in the first device material; and
causing the anionic exchange in the first device material.

3. The method of claim 2 wherein:
the second temperature is greater than the first temperature.

4. The method of claim 2 further comprising:
depositing a first precursor material over the carrier substrate; and
depositing a second precursor material over the carrier substrate;
wherein:
depositing the first precursor material over the carrier substrate and depositing the second precursor material over the carrier substrate comprise:
forming the first device material over the carrier substrate.

5. The method of claim 4 further comprising:
positioning the carrier substrate a first distance from a source of the first precursor material and a second distance from a source of the second precursor material;
wherein:
forming the first device material over the carrier substrate and positioning the carrier substrate the first distance from the source of the first precursor material and the second distance from the source of the second precursor material occur approximately simultaneously;
transforming the first device material into the second device material further comprises:
positioning the carrier substrate a third distance from the source of the first precursor material and a fourth distance from the source of the second precursor material;

and
at least one of:
positioning the carrier substrate the first distance from the source of the first precursor material and the second distance from the source of the second precursor material comprises:
exposing the carrier substrate to the first temperature;

or
positioning the carrier substrate the third distance from the source of the first precursor material and the fourth distance from the source of the second precursor material comprises:
exposing the carrier substrate to the second temperature.

6. The method of claim 5 wherein at least one of:
the second distance is less than the first distance; or
the fourth distance is less than the second distance.

7. The method of claim 4 wherein at least one of:
the first precursor material comprises cadmium selenide; or
the second precursor material comprises zinc sulfide.

8. The method of claim 1 further comprising:
after transforming the first device material into the second device material, forming a third device material over the carrier substrate.

9. The method of claim 8 further comprising:
after forming the third device material over the carrier substrate, forming a fourth device material over the carrier substrate.

10. The method of claim 1 wherein:
the first device material comprises a first quaternary alloy; and
the first quaternary alloy comprises a first alloy composition.

11. The method of claim 10 wherein at least one of:
the second device material comprises a second quaternary alloy, the second quaternary alloy comprises a second alloy composition, the first quaternary alloy comprises the second quaternary alloy, and the first alloy composition is different than the second alloy composition; or
the first quaternary alloy comprises a zinc-cadmium-sulfur-selenium (ZnCdSSe) quaternary alloy.

12. The method of claim 10 wherein at least one of:
(a) a third device material comprises a third quaternary alloy, the third quaternary alloy comprises a third alloy composition, the first quaternary alloy comprises the third quaternary alloy, and the first alloy composition is different than the third alloy composition; or
(b) a fourth device material comprises a fourth quaternary alloy, the fourth quaternary alloy comprises a fourth alloy composition, the first quaternary alloy comprises the fourth quaternary alloy, and the first alloy composition comprises the fourth alloy composition.

13. The method of claim 1 further comprising:
exposing the carrier substrate to a first temperature;
depositing a first precursor material over the carrier substrate;
depositing a second precursor material over the carrier substrate; and
positioning the carrier substrate a first distance from a source of the first precursor material and a second distance from a source of the second precursor material;
wherein:
exposing the carrier substrate to the first temperature and forming the first device material over the carrier substrate occur approximately simultaneously;
transforming the first device material into the second device material further comprises:
exposing the carrier substrate to a second temperature;

exposing the carrier substrate to the second temperature comprises:
causing the cationic exchange in the first device material; and
causing the anionic exchange in the first device material;

the second temperature is greater than the first temperature;
depositing the first precursor material over the carrier substrate and depositing the second precursor material over the carrier substrate comprise:
forming the first device material over the carrier substrate;

forming the first device material over the carrier substrate and positioning the carrier substrate the first distance from the source of the first precursor material and the second distance from the source of the second precursor material occur approximately simultaneously;
transforming the first device material into the second device material further comprises:
positioning the carrier substrate a third distance from the source of the first precursor material and a fourth distance from the source of the second precursor material;

positioning the carrier substrate the first distance from the source of the first precursor material and the second distance from the source of the second precursor material comprises:
exposing the carrier substrate to the first temperature; and

positioning the carrier substrate the third distance from the source of the first precursor material and the fourth distance from the source of the second precursor material comprises:
exposing the carrier substrate to the second temperature.

14. A method comprising:
providing a carrier substrate;
depositing a first precursor material over the carrier substrate;
depositing a second precursor material over the carrier substrate; and
while depositing the first precursor material over the carrier substrate, and while depositing the second precursor material over the carrier substrate:
positioning the carrier substrate a first distance from a source of the first prec

Assignees

• Univ Arizona State

Inventors

• Ning Cun-Zheng
• Turkdogan Sunay
• Liu Zhicheng
• Fan Fan

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P32/14

  within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H10P14/3431

  Selenides · CPC title