Pressure sensor

Patent metadata

Field	Value
Publication number	US-10451507-B2
Application number	US-201715638734-A
Country	US
Kind code	B2
Filing date	Jun 30, 2017
Priority date	Jul 8, 2016
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

To suppress variations in the shift amount of the zero point of a sensor output when a pipe is connected to a pressure sensor via a clamp. A pressure sensor includes two semiconductor chips in two straight lines, orthogonal to each other, that pass through a center of a diaphragm in plan view, two resistors in the region between two supporting members supporting one semiconductor chip, and two other resistors in the region between two other supporting members supporting the other semiconductor chip.

First claim

The invention claimed is:

1. A pressure sensor comprising:
a diaphragm having a first principal surface receiving a pressure of a measurement target fluid and a second principal surface opposite to the first principal surface;
a first seat provided in an area of the second principal surface in which the diaphragm is deformed when a first pressure higher than a second pressure in the second principal surface is applied to the first principal surface, the first seat being disposed concentrically with the diaphragm in plan view and projecting from the second principal surface orthogonally;
a second seat provided in the area concentrically with the diaphragm in plan view and projecting from the second principal surface orthogonally, the second seat having a larger diameter than the first seat;
a first semiconductor chip having a first resistor and a second resistor on a first surface thereof, the first resistor and the second resistor being included in a strain gauge;
a second semiconductor chip having a third resistor and a fourth resistor on a first surface thereof, the third resistor and the fourth resistor being included in the strain gauge;
a first structural body provided orthogonally to the second principal surface, having one end thereof coupled to a part of the first seat, the part being disposed in a first straight line passing through a center of the second principal surface of the diaphragm in plan view, and another end thereof is coupled to a second surface of the first semiconductor chip;
a second structural body, provided orthogonally to the second principal surface, having one end thereof coupled to a part of the second seat, the part being disposed in the first straight line in plan view, and another end thereof is coupled to the second surface of the first semiconductor chip;
a third structural body, provided orthogonally to the second principal surface, having one end thereof coupled to a part of the first seat, the part being disposed in a second straight line passing through the center of the second principal surface and orthogonal to the first straight line in plan view and another end thereof is coupled to a second surface of the second semiconductor chip; and
a fourth structural body, provided orthogonally to the second principal surface, having one end thereof coupled to a part of the second seat, the part being disposed in the second straight line in plan view, and another end thereof is coupled to the second surface of the second semiconductor chip,
wherein the first resistor and the second resistor are formed in a first region between a first coupling surface to which the first structural body is coupled and a second coupling surface to which the second structural body is coupled in plan view in the first semiconductor chip, and
the third resistor and the fourth resistor are formed in a second region between a third coupling surface to which the third structural body is coupled and a fourth coupling surface to which the fourth structural body is coupled in plan view in the second semiconductor chip.

2. The pressure sensor according to claim 1 ,
wherein the first semiconductor chip is formed in a rectangle and the first semiconductor chip is disposed so that a longer side thereof is parallel to the first straight line,
the second semiconductor chip is formed in a rectangle and the second semiconductor chip is disposed so that a longer side thereof is parallel to the second straight line,
the first resistor and the second resistor are disposed side by side in a direction parallel to a shorter side of the first semiconductor chip and extend in directions different from each other, and
the third resistor and the fourth resistor are disposed side by side in a direction parallel to a shorter side of the second semiconductor chip and extend in directions different from each other.

3. The pressure sensor according to claim 2 ,
wherein the first resistor and the fourth resistor extend in a same direction, and
the second resistor and the third resistor extend in a direction orthogonal to the same direction in which the first resistor and the fourth resistor extend.

4. The pressure sensor according to claim 2 ,
wherein the first resistor, the second resistor, the third resistor, and the fourth resistor are disposed equidistantly from the center of the second principal surface of the diaphragm.

5. The pressure sensor according to claim 1 ,
wherein the first semiconductor chip is formed in a rectangle and the first semiconductor chip is disposed so that a longer side thereof is parallel to the first straight line,
the second semiconductor chip is formed in a rectangle and the second semiconductor chip is disposed so that a longer side thereof is parallel to the second straight line,
the first resistor and the second resistor are disposed side by side in a direction parallel to the longer side of the first semiconductor chip, and
the third resistor and the fourth resistor are disposed side by side in a direction parallel to the longer side of the second semiconductor chip.

6. The pressure sensor according to claim 5 ,
wherein the first resistor, the second resistor, the third resistor, and the fourth resistor extend in the same direction.

7. The pressure sensor according to claim 5 ,
wherein the first resistor and the fourth resistor are disposed equidistantly from the center of the second principal surface of the diaphragm and the second resistor and the third resistor are disposed equidistantly from the center of the second principal surface of the diaphragm.

8. The pressure sensor according to claim 1 ,
wherein the first semiconductor chip has a first thin-walled portion thinner than regions to which the first structural body and the second structural body are coupled,
the second semiconductor chip has a second thin-walled portion thinner than regions to which the third structural body and the fourth structural body are coupled,
the first resistor and the second resistor are formed in the first region on the first surface of the first semiconductor chip, the first region corresponding to the first thin-walled portion, and
the third resistor and the fourth resistor are formed in the second region on the first surface of the second semiconductor chip, the second region corresponding to the second thin-walled portion.

Assignees

• Azbil Corp

Inventors

• Seto Yuki
• Ogasawara Rina

Classifications

• G01L9/0052 Primary

  of piezoresistive elements (circuits therefor G01L9/06) · CPC title

• G01L19/147

  Details about the mounting of the sensor to support or covering means · CPC title

• G01L13/025

  using diaphragms · CPC title

• G01L9/0055 Primary

  bonded on a diaphragm · CPC title