Pressure sensor

Patent metadata

Field	Value
Publication number	US-2018010976-A1
Application number	US-201715638782-A
Country	US
Kind code	A1
Filing date	Jun 30, 2017
Priority date	Jul 8, 2016
Publication date	Jan 11, 2018
Grant date	—

Abstract

A pressure sensor includes a diaphragm having a first principal surface and a second principal surface, a semiconductor chip in which resistors constituting a strain gauge are formed, a first structural body having one end coupled to a center of a second principal surface of the diaphragm and the other end coupled to the other surface of the semiconductor chip, and at least two second structural bodies disposed in two straight lines, orthogonal to each other, that pass through the center of the diaphragm in plan view so as to be disposed separately from the first structural body, and having one ends coupled to the second principal surface and the other ends coupled to the other surface of the semiconductor chip, in which the resistors are formed in regions between the first structural body and the second structural bodies in plan view in the semiconductor chip.

First claim

1 . A pressure sensor comprising:
a diaphragm having a first principal surface receiving a pressure of a measurement target fluid and a second principal surface opposite to the first principal surface; a semiconductor chip having a plurality of resistors on one surface thereof, the resistors being included in a strain gauge; a first structural body having one end coupled to a center of the second principal surface of the diaphragm and another end coupled to another surface of the semiconductor chip; and at least two second structural bodies having one ends coupled to the second principal surface and other ends coupled to the other surface of the semiconductor chip, the at least two second structural bodies being disposed in two straight lines that pass through the center of the second principal surface of the diaphragm and are orthogonal to each other in plan view, the at least two second structural bodies being disposed separately from the first structural body, wherein the resistors are formed in regions between the first structural body and the second structural bodies in plan view.

2 . The pressure sensor according to claim 1 ,
wherein the semiconductor chip is formed in a square in plan view, the other end of the first structural body is coupled to a center of the other surface of the semiconductor chip, and each of the other ends of the second structural bodies is coupled to the other surface of the semiconductor chip along each of sides of the other surface of the semiconductor chip.

3 . The pressure sensor according to claim 2 ,
wherein the plurality of resistors are included in a bridge circuit, a first resistor and a second resistor included in one of two pairs of resistors connected in parallel between two output terminals of the bridge circuit are formed in a region between a coupling surface of one of the second structural bodies disposed in one of the two straight lines and a coupling surface of the first structural body in plan view in the semiconductor chip and a third resistor and a fourth resistor included in another of the two pairs of resistors are formed in a region between a coupling surface of another of the second structural bodies disposed in the other of the two straight lines and the coupling surface of the first structural body in plan view in the semiconductor chip, the first resistor and the fourth resistor extend in a same direction in plan view, and the second resistor and the third resistor extend in another same direction in plan view.

4 . The pressure sensor according to claim 3 ,
wherein the same direction in which the first resistor and the fourth resistor extend is orthogonal to the other same direction in which the second resistor and the third resistor extend in plan view.

5 . The pressure sensor according to claim 2 ,
wherein the plurality of resistors include four resistors constituting a bridge circuit and the four resistors extend in a same direction in plan view and each of the four resistors is formed in a region between a coupling surface of the first structural body and a coupling surface of each of the second structural bodies in the semiconductor chip.

6 . The pressure sensor according to claim 1 ,
wherein the semiconductor chip is formed in a cross in plan view, the other end of the first structural body is coupled to a center of the other surface of the semiconductor chip, and each of the other ends of the second structural bodies is coupled to each of four arms on the other surface of the semiconductor chip.

7 . The pressure sensor according to claim 6 ,
wherein the plurality of resistors are included in a bridge circuit, a first resistor and a second resistor included in one of two pairs of resistors connected in parallel between two output terminals of the bridge circuit are formed in a region between a coupling surface of one of the second structural bodies disposed in one of the two straight lines and a coupling surface of the first structural body in plan view in the semiconductor chip and a third resistor and a fourth resistor included in another of the two pairs of resistors are formed in a region between a coupling surface of another of the second structural bodies disposed in the other of the two straight lines and the coupling surface of the first structural body in plan view in the semiconductor chip, the first resistor and the fourth resistor extend in a same direction in plan view, and the second resistor and the third resistor extend in another same direction in plan view.

8 . The pressure sensor according to claim 7 ,
wherein the same direction in which the first resistor and the fourth resistor extend is orthogonal to the other same direction in which the second resistor and the third resistor extend in plan view.

9 . The pressure sensor according to claim 6 ,
wherein the plurality of resistors include four resistors constituting a bridge circuit, and the four resistors extend in a same direction in plan view and each of the four resistors is formed in a region between a coupling surface of the first structural body and a coupling surface of each of the second structural bodies in the semiconductor chip.

10 . The pressure sensor according to claim 1 ,
wherein the at least two second structural bodies are two second structural bodies, the semiconductor chip is formed in a polygon in plan view, the other end of the first structural body is coupled to a region including one corner of the other surface of the semiconductor chip, the other end of one of the second structural bodies is coupled along one of two sides forming the one corner of the other surface of the semiconductor chip, the other end of the other of the second structural bodies is coupled along another of the two sides forming the one corner of the other surface of the semiconductor chip, the plurality of resistors are included in a bridge circuit, a first resistor and a second resistor included in one of two pairs of resistors connected in parallel between two output terminals of the bridge circuit are formed in a region between a coupling surface of the first structural body and a coupling surface of the one of the second structural bodies in plan view in the semiconductor chip and a third resistor and a fourth resistor included in another of the two pairs of resistors are formed in a region between the coupling surface of the first structural body and the coupling surface of the other of the second structural bodies in plan view in the semiconductor chip, the first resistor and the fourth resistor extend in a same direction in plan view, and the second resistor and the third resistor extend in another same direction in plan view.

11 . The pressure sensor according to claim 10 ,
wherein the same direction in which the first resistor and the fourth resistor extend is orthogonal to the other same direction in which the second resistor and the third resistor extend in plan view.

12 . The pressure sensor according to claim 10 ,
wherein an inner angle of one corner to which the first structural body and the second structural bodies are not coupled is larger than 180 degrees in plan view in the semiconductor chip.

13 . The pressure sensor according to claim 1 ,
wherein the semiconductor chip is formed in a square in plan view, the plurality of resistors includes four resistors constituting a bridge circuit, the other end of the first structural body is coupled to a center of the other surface of the semiconductor chip, the other ends of the second structural bodies are coupled to four corners of the other surface of the semiconductor chip, and the four resistor

Assignees

• Azbil Corp

Inventors

• Seto Yuki
• Ishikura Yoshiyuki
• Ogasawara Rina

Classifications

• G01L13/025

  using diaphragms · CPC title

• A61B2562/0247

  Pressure sensors · CPC title

• G01L9/0055 Primary

  bonded on a diaphragm · CPC title

• G01L9/0051

  using variations in ohmic resistance · CPC title

• G01L9/0052

  of piezoresistive elements (circuits therefor G01L9/06) · CPC title