Strain sensing element, having a first and second magnetic layer and a third layer that is antiferrimagnetic

Patent metadata

Field	Value
Publication number	US-10448845-B2
Application number	US-201715421283-A
Country	US
Kind code	B2
Filing date	Jan 31, 2017
Priority date	Sep 20, 2013
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

According to one embodiment, a strain sensing element provided on a deformable substrate includes: a first magnetic layer; a second magnetic layer; a spacer layer; and a bias layer. Magnetization of the second magnetic layer changes according to deformation of the substrate. The spacer layer is provided between the first magnetic layer and the second magnetic layer. The second magnetic layer is provided between the spacer layer and the bias layer. The bias layer is configured to apply a bias to the second magnetic layer.

First claim

What is claimed is:

1. A strain sensing element provided on a deformable substrate, comprising:
a first layer having a first magnetization;
a second layer having a second magnetization to change according to a deformation of the substrate;
an intermediate layer provided between the first layer and the second layer;
a third layer,
the second layer being provided between the intermediate layer and the third layer,
at least a part of the third layer being antiferromagnetic; and

an additional layer,
the first layer being provided between the additional layer and the intermediate layer,
at least a part of the additional layer being antiferromagnetic.

2. The element according to claim 1 , wherein the first magnetization is pinned.

3. The element according to claim 1 , further comprising:
a fourth layer provided between the third layer and the second layer, the fourth layer being magnetic; and
a fifth layer provided between the fourth layer and the second layer, the fifth layer being non-magnetic.

4. The element according to claim 3 , wherein
the fourth layer includes at least one selected from the group consisting of Co, Fe, and Ni, and
the fifth layer includes at least one selected from the group consisting of Cu, Ru, Rh, Ir, V, Cr, Nb, Mo, Ta, W, Rr, Au, Ag, Pt, Pd, Ti, Zr, and Hf.

5. The element according to claim 3 , further comprising:
a sixth layer provided between the third layer and the fourth layer;
a seventh layer provided between the sixth layer and the fourth layer; and
a relative angle between a magnetization of the fourth layer and a magnetization of the sixth layer is 180°.

6. The element according to claim 3 , wherein the fifth layer includes at least one selected from the group consisting of copper (Cu), gold (Au), silver (Ag), chrome (Cr), ruthenium (Ru), and iridium (Ir).

7. The element according to claim 1 , wherein the third layer applies a magnetic bias to the second layer, and a relative angle between a direction of the magnetic bias in the second layer and the first magnetization is 180°.

8. The element according to claim 1 , wherein the third layer applies a magnetic bias to the second layer, and a relative angle between a direction of the magnetic bias in the second layer and the first magnetization is not less than 90° and not more than 270°.

9. The element according to claim 1 , wherein the first magnetization is configured to change according to a deformation.

10. The element according to claim 1 , further comprising:
a ninth layer provided between an eighth layer comprising the additional layer and the first layer, the ninth layer being magnetic; and
a tenth layer provided between the ninth layer and the first layer, the tenth layer being non-magnetic.

11. The element according to claim 10 , wherein
the ninth layer includes at least one selected from the group consisting of Co, Fe, and Ni, and
the tenth layer includes at least one selected from the group consisting of Cu, Ru, Rh, Ir, V, Cr, Nb, Mo, Ta, W, Rr, Au, Ag, Pt, Pd, Ti, Zr, and Hf.

12. The element according to claim 10 , further comprising:
an eleventh layer provided between the eighth layer and the ninth layer;
a twelfth layer provided between the eleventh layer and the eighth layer; and
a relative angle between a magnetization of the ninth layer and a magnetization of the eleventh layer is 180°.

13. The element according to claim 12 , further comprising:
a lower first magnetic coupling layer provided between the lower first bias magnetic layer and the lower second bias magnetic layer and configured to cause anti-ferromagnetic coupling to occur between the lower first bias magnetic layer and the lower second bias magnetic layer,
wherein the third layer applies a first magnetic bias to the second layer,
the eighth layer applies a second magnetic bias to the first layer, and
a relative angle between a direction of the first magnetic bias in the second layer and a direction of the second magnetic bias in the first layer is 180°.

14. The element according to claim 10 , wherein the tenth layer includes at least one selected from the group consisting of copper (Cu), gold (Au), silver (Ag), chrome (Cr), ruthenium (Ru), and iridium (Ir).

15. The element according to claim 1 , wherein
the third layer applies a first magnetic bias to the second layer,
the additional layer applies a second magnetic bias to the first layer, and
a relative angle between a direction of the first magnetic bias in the second layer and a direction of the second magnetic bias in the first layer is 180°.

16. A pressure sensor comprising:
a support unit;
a substrate supported by the support unit, the substrate being deformable; and
a strain sensing element provided on the substrate, the strain sensing element including
a first layer having a first magnetization,
a second layer having a second magnetization to change according to a deformation of the substrate,
an intermediate layer provided between the first layer and the second layer, and
a third layer,
the second layer being provided between the intermediate layer and the third layer,
at least a part of the third layer being anti-ferromagnetic.

17. The sensor according to claim 16 , wherein the strain sensing element further includes:
a fourth layer provided between the third layer and the second layer, the fourth layer being magnetic, and
a fifth layer provided between the fourth layer and the second layer, the fifth layer being non-magnetic, and
a first angle formed by a magnetization of the fourth layer and a first straight line is in a first range or a second range,
the first range is not less than 0° and not more than 15°,
the second range is not less than 75° and not more than 105°, and
the first straight line connects an outer edge of the substrate and a centroid of the strain sensing element in shortest distance.

18. The sensor according to claim 16 , wherein the strain sensing element further includes:
a fourth layer provided between the third layer and the second layer, the fourth layer being magnetic, and
a fifth layer provided between the fourth layer and the second layer, the fifth layer being non-magnetic, and
a second angle formed by a magnetization of the fourth layer and a second straight line is in a first range or a second range,
the first range is not less than 0° and not more than 15°,
the second range is not less than 75° and not more than 105°, and
the second straight line connects a centroid of the substrate and a centroid of the strain sensing element in shortest distance.

19. The sensor according to claim 16 , wherein
a plurality of strain sensing elements are provided on the substrate, and
at least two of the plurality of strain sensing elements are electrically connected in series.

20. A microphone, comprising:
a cover; and
the pressure sensor according to claim 16 , the pressure sensor being provided in the cover.

Assignees

• Toshiba Kk

Inventors

• Fuji Yoshihiko
• Fukuzawa Hideaki
• Kaji Shiori

Classifications

• H04R3/00

  Circuits for transducers (arrangements for producing a reverberation or echo sound G10K15/08; amplifiers H03F) · CPC title

• H04R31/006

  Interconnection of transducer parts (of diaphragm and outer suspension by moulding H04R31/003) · CPC title

• H04R2201/003

  Mems transducers or their use · CPC title

• H04R23/006

  using solid state devices (solid state devices per se H10) · CPC title

• H04R19/04

  Microphones (H04R19/01 takes precedence) · CPC title