Magnetoresistive effect device

Patent metadata

Field	Value
Publication number	US-9906199-B2
Application number	US-201615066350-A
Country	US
Kind code	B2
Filing date	Mar 10, 2016
Priority date	Mar 16, 2015
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A magnetoresistive effect device includes a magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer; a first port; a second port; a signal line; an impedance element; and a direct-current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The impedance element is connected to ground and to the signal line between the magnetoresistive effect element and the first port or the second port. The direct-current input terminal is connected to the signal line at the opposite side to the impedance element with the magnetoresistive effect element in between the direct-current input terminal and the impedance element. A closed circuit including the magnetoresistive effect element, the signal line, the impedance element, the ground, and the direct-current input terminal is to be formed.

First claim

What is claimed is:

1. A magnetoresistive effect device comprising:
at least one magnetoresistive effect element;
a first port through which a high-frequency signal is input;
a second port through which a high-frequency signal is output;
a signal line;
an impedance element; and
a direct-current input terminal,
wherein the first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line,
wherein the impedance element (i) is connected to the signal line between the magnetoresistive effect element and the first port or the second port, and (ii) is further able to be connected to a ground;
wherein the direct-current input terminal is connected to the signal line, and the magnetoresistive effect element is between (i) a location at which the impedance element is connected to the signal line, and (ii) a location at which the direct-current input terminal is connected to the signal line, and
wherein the magnetoresistive effect device is able to form a closed circuit when it is connected to the ground, where the closed circuit includes the magnetoresistive effect element, the signal line, the impedance element, the ground, and the direct-current input terminal.

2. The magnetoresistive effect device according to claim 1 , further comprising at least one magnetic-field applying mechanism that is configured to apply a magnetic field to the magnetoresistive effect element.

3. The magnetoresistive effect device according to claim 2 ,
wherein the magnetic-field applying mechanism is configured to vary the magnetic field to vary a spin torque resonance frequency of the magnetoresistive effect element.

4. The magnetoresistive effect device according to claim 1 ,
wherein the at least one magnetoresistive effect element includes a plurality of magnetoresistive effect elements having different spin torque resonance frequencies from each other, and
wherein the magnetoresistive effect elements are connected in parallel to each other.

5. The magnetoresistive effect device according to claim 2 ,
wherein the at least one magnetoresistive effect element includes a plurality of magnetoresistive effect elements,
wherein the at least one magnetic-field applying mechanism includes a plurality of magnetic-field applying mechanisms, and
wherein the magnetoresistive effect elements are connected in parallel to each other and the magnetic-field applying mechanisms are provided so as to apply an individual magnetic field to each of the magnetoresistive effect elements.

6. The magnetoresistive effect device according to claim 1 ,
wherein the at least one magnetoresistive effect element includes a plurality of magnetoresistive effect elements having different spin torque resonance frequencies from each other, and
wherein the magnetoresistive effect elements are connected in series to each other.

7. The magnetoresistive effect device according to claim 2 ,
wherein the at least one magnetoresistive effect element includes a plurality of magnetoresistive effect elements,
wherein the at least one magnetic-field applying mechanism includes a plurality of magnetic-field applying mechanisms, and
wherein the magnetoresistive effect elements are connected in series to each other and the magnetic-field applying mechanisms are provided so as to apply an individual magnetic field to each of the magnetoresistive effect elements.

8. The magnetoresistive effect device according to claim 4 ,
wherein plan view shapes of the magnetoresistive effect elements having different spin torque resonance frequencies from each other have different aspect ratios from each other.

9. The magnetoresistive effect device according to claim 6 ,
wherein plan view shapes of the magnetoresistive effect elements having different spin torque resonance frequencies from each other have different aspect ratios from each other.

10. The magnetoresistive effect device according to claim 1 ,
wherein the magnetoresistive effect device does not include a magnetoresistive effect element connected to the signal line and the ground in parallel with the second port.

Assignees

• Tdk Corp

Inventors

• Shibata Tetsuya
• Urabe Junichiro
• Shimura Atsushi
• Yamane Takekazu

Classifications

• H01L43/00

  Electricity · mapped topic

• H03H2001/0057

  comprising magnetic material · CPC title

• H03H2/00 Primary

  Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 · CPC title

• H03H1/0007 Primary

  of radio frequency interference filters · CPC title

• H03H2001/0085

  Multilayer, e.g. LTCC, HTCC, green sheets · CPC title