Solid state lighting devices with dielectric insulation and methods of manufacturing

Patent metadata

Field	Value
Publication number	US-10439102-B2
Application number	US-201815910460-A
Country	US
Kind code	B2
Filing date	Mar 2, 2018
Priority date	Aug 9, 2010
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

First claim

I claim:

1. A method for forming a solid state lighting device, comprising:
providing a solid state lighting (SSL) structure on a substrate material, the SSL structure including a first semiconductor material and an active region over the first semiconductor material;
forming an indentation in the SSL structure, thereby exposing sidewalls of the first semiconductor material and the active region;
depositing an insulating material over the SSL structure, the insulating material covering exposed portions of the first semiconductor material and the active region in the indentation; and
depositing a second semiconductor material on the SSL structure over the indentation and a surface of the active region, the second semiconductor material including (a) a first portion in contact with the active region and (b) a second portion in the indentation and separated from the first semiconductor material by the insulating material.

2. The method of claim 1 wherein the indentation is a V-shaped indentation.

3. The method of claim 1 wherein the sidewalls of the indentation converge toward one another as they extend toward the first semiconductor material.

4. The method of claim 1 , further comprising depositing a conductive material over the second semiconductor material.

5. The method of claim 1 wherein depositing the insulating material over the SSL structure includes depositing the insulating material over an upper surface of the active region, the method further comprising:
prior to depositing the second semiconductor material, removing the insulative material over the upper surface of the active region, the insulating material in the indentation remaining.

6. The method of claim 5 , wherein depositing the insulating material includes depositing the insulating material prior to forming a conductive material over the second semiconductor material.

7. The method of claim 6 , further comprising depositing a conductive material over both the second semiconductor material and the insulating material in the indentation.

8. The method of claim 5 , wherein the insulating material remaining in the indentation generally fills the indentation.

9. The method of claim 1 , wherein depositing the insulating material includes depositing the insulating material in the indentation and generally conforming to the sidewalls of the indentation.

10. The method of claim 1 , wherein depositing the insulating material over the SSL structure includes at least partially filling the indentation with the insulating material.

Assignees

• Micron Technology Inc

Inventors

• Schellhammer Scott D

Classifications

• H01L33/24

  Electricity · mapped topic

• H01L33/06

  Electricity · mapped topic

• H01L33/0095

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic

• H01L33/025 Primary

  Electricity · mapped topic