Integrated circuits including a FinFET and a nanostructure FET

Patent metadata

Field	Value
Publication number	US-10439039-B2
Application number	US-201615081702-A
Country	US
Kind code	B2
Filing date	Mar 25, 2016
Priority date	Mar 25, 2016
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

An integrated circuit includes a FinFET and a nanostructure FET. The integrated circuit includes a bulk substrate. The integrated circuit also includes a fin field effect transistor (FinFET) coupled to the bulk substrate. The FinFET includes a first source region, a first drain region, and a fin extending between the first source region and the first drain region. The integrated circuit also includes a nanostructure FET coupled to the bulk substrate. The nanostructure FET includes a second source region, a second drain region, and a stack of at least two nanostructures extending between the second source region and the second drain region.

First claim

What is claimed is:

1. An integrated circuit comprising:
a bulk substrate;
a fin field effect transistor (FinFET) coupled to the bulk substrate and including a first source region, a first drain region, and an elongated fin of semiconductor material extending between the first source region and the first drain region;
a nanostructure FET coupled to the bulk substrate and including a second source region, a second drain region, and a stack of at least two nanostructures extending between the second source region and the second drain region, each nanostructure of the at least two nanostructures having a first width, the first width different than a width of the elongated fin of the FinFET; and
a shallow trench isolation (STI) region disposed between the FinFET and the nanostructure FET, the STI region having a top surface coplanar with a surface of a layer of the FinFET, the layer disposed between the elongated fin and the bulk substrate.

2. The integrated circuit of claim 1 , wherein the stack includes multiple epitaxial layers and the elongated fin includes a single epitaxial layer, and wherein each nanostructure of the at least two nanostructures includes a nanowire or a nanoslab, each nanostructure having a first height, the first height different than a height of the elongated fin of the FinFET, wherein the elongated fin extends vertically above the bulk substrate.

3. The integrated circuit of claim 1 , wherein the nanostructure FET further includes a gate region between the second source region and the second drain region, at least a portion of the gate region coupled to the STI region.

4. The integrated circuit of claim 1 , wherein the elongated fin includes a first material, the elongated fin coupled to the layer of the FinFET, the layer including a second material, the second material different than the first material.

5. The integrated circuit of claim 4 , wherein the second material includes silicon germanium.

6. The integrated circuit of claim 1 , wherein a top of the elongated fin and a top of the stack of at least two nanostructures are substantially the same distance from the bulk substrate.

7. The integrated circuit of claim 1 , wherein a top of the elongated fin is a first distance from the bulk substrate and a top of the stack of at least two nanostructures is a second distance from the bulk substrate, the first distance greater than the second distance.

8. The integrated circuit of claim 1 , wherein the nanostructure FET includes a p-type FET and the stack of at least two nanostructures includes at least three nanostructures, and wherein the at least three nanostructures are suspended by the second source region the second drain region.

9. The integrated circuit of claim 1 , further comprising:
a second FinFET coupled to the bulk substrate and including a third source region, a third drain region, and a second elongated fin extending between the third source region and the third drain region; and
a second nanostructure FET coupled to the bulk substrate and including a fourth source region, a fourth drain region, and a second stack of at least three nanostructures extending between the fourth source region and the fourth drain region, wherein the at least two nanostructures of the second stack consists of two nanostructures, and wherein one of the stack or the second stack includes multiple epitaxial layers and the elongated fin or the second elongated fin includes a single epitaxial layer.

10. The integrated circuit of claim 1 , wherein one of the at least two nanostructures is disposed on a portion of the bulk substrate.

11. The integrated circuit of claim 1 , wherein the top surface of the STI region is coplanar with a surface of one of the at least two nanostructures.

12. The integrated circuit of claim 1 , wherein a sidewall of the elongated fin of the FinFET faces a sidewall of the stack of the nanostructure FET in a direction perpendicular to the direction of the length of a trench formed in the bulk substrate.

13. The integrated circuit of claim 1 , further comprising a trench formed in the bulk substrate between the FinFET and the nanostructure FET, the trench having a length oriented in a direction substantially parallel to a length of the at least two nanostructures, the trench having a first sidewall coplanar with a sidewall of the elongated fin of the FinFET.

14. The integrated circuit of claim 13 , wherein a second sidewall of the trench is coplanar with a sidewall of one of the at least two nanostructures.

15. A method comprising:
forming, on a bulk substrate, a fin field effect transistor (FinFET) including a first source region, a first drain region, and an elongated fin of semiconductor material extending between the first source region and the first drain region;
forming, on the bulk substrate, a nanostructure FET including a second source region, a second drain region, and a stack of at least two nanostructures extending between the second source region and the second drain region, wherein each nanostructure of the at least two nanostructures is formed having a first width, the first width different than a width of the elongated fin of the FinFET; and
forming a shallow trench isolation (STI) region between the FinFET and the nanostructure FET, the STI region having a top surface coplanar with a surface of a layer of the FinFET, the layer disposed between the elongated fin and the bulk substrate.

16. The method of claim 15 , wherein forming the FinFET and forming the nanostructure FET on the bulk substrate comprises forming an alternating bilayer including first, second, third, fourth, and fifth epitaxial layers on the bulk substrate, the first epitaxial layer between the second epitaxial layer and the bulk substrate, the third epitaxial layer between the fourth epitaxial layer and the second epitaxial layer, and the fourth epitaxial layer between the third epitaxial layer and the fifth epitaxial layer.

17. The method of claim 16 , further comprising removing portions of the second, third, fourth, and fifth epitaxial layers proximate to a first region of the bulk substrate.

18. The method of claim 17 , further comprising forming a fill layer proximate to the first region of the bulk substrate after removing portions of the second, third, fourth, and fifth epitaxial layers proximate to the first region of the bulk substrate.

19. The method of claim 18 , further comprising:
removing portions of the alternating bilayer proximate to a second region of the bulk substrate to form a stack of portions of the alternating bilayer; and
forming the elongated fin by etching portions of the fill layer and portions of the first epitaxial layer proximate to the first region.

20. The method of claim 16 , further comprising removing portions of the third, fourth, and fifth epitaxial layers proximate to a first region of the bulk substrate.

21. The method of claim 20 , further comprising forming a fill layer proximate to the first region of the bulk substrate after removing portions of the third, fourth, and fifth epitaxial layers proximate to the first region of the bulk substrate.

22. The method of claim 21 , further comprising:
removing portions of the alternating bilayer proximate to a second region of the bulk substrate to form a stack of portions of the alternating bilayer; and
forming the elongated fin by etching portions of the fill layer proximate to the first region.

23. The method of claim 22 , further comprising forming a Fi

Assignees

• Qualcomm Inc

Inventors

• Song Stanley Seungchul
• Xu Jeffrey Junhao
• Rim Kern
• Yeap Choh Fei

Classifications

• H01L29/42392

  Electricity · mapped topic

• H01L29/1054

  Electricity · mapped topic

• H01L29/161

  Electricity · mapped topic

• H01L27/0886

  Electricity · mapped topic

• H01L29/78696

  Electricity · mapped topic