Method for forming source/drain contacts
US-2024379814-A1 · Nov 14, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/161 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 2,856 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 199 |
| 2016 | 432 |
| 2017 | 529 |
| 2018 | 436 |
| 2019 | 353 |
| 2020 | 290 |
| 2021 | 189 |
| 2022 | 155 |
| 2023 | 129 |
| 2024 | 118 |
| 2025 | 26 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device having fin-type field effect transistor and method of manufacturing the same
US-12119351-B2 · Oct 15, 2024 · US
Photoresist stripping and cleaning composition, method of its preparation and its use
US-9223221-B2 · Dec 29, 2015 · US
High percentage silicon germanium alloy fin formation
US-9224822-B2 · Dec 29, 2015 · US
Structure and method for SRAM FinFET device
US-9224736-B1 · Dec 29, 2015 · US
Method for fabricating vertically stacked nanowires for semiconductor applications
US-2015372118-A1 · Dec 24, 2015 · US
Semiconductor device and method for fabricating the same
US-2015372143-A1 · Dec 24, 2015 · US
Multi-channel gate-all-around fet
US-2015372104-A1 · Dec 24, 2015 · US
Finfet and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions
US-2015364603-A1 · Dec 17, 2015 · US
Body-tied, strained-channel multi-gate device and methods of manufacturing same
US-9214554-B2 · Dec 15, 2015 · US
Silicide formation due to improved SiGe faceting
US-9202883-B2 · Dec 1, 2015 · US
Abrupt source/drain junction formation using a diffusion facilitation layer
US-9202812-B2 · Dec 1, 2015 · US
Multi-plasma nitridation process for a gate dielectric
US-9196700-B2 · Nov 24, 2015 · US
Method for a uniform compressive strain layer and device thereof
US-9190516-B2 · Nov 17, 2015 · US
Finfets suitable for use in a high density sram cell
US-2015325597-A1 · Nov 12, 2015 · US
Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer
US-9184290-B2 · Nov 10, 2015 · US
Semiconductor device and method for manufacturing same
US-9184229-B2 · Nov 10, 2015 · US
Structure and Method for SRAM FinFET Device
US-2015311212-A1 · Oct 29, 2015 · US
Semiconductor device and method for manufacturing the same
US-2015303192-A1 · Oct 22, 2015 · US
Complementarily strained FinFET structure
US-9165929-B2 · Oct 20, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/161?
- CPC H01L29/161 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/161 (Electricity)?
- Our database includes 2,856 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/161 growing?
- Publication counts under this code: 118 in 2024 vs 26 in 2025 (latest complete years).