Display apparatus

Patent metadata

Field	Value
Publication number	US-10439015-B2
Application number	US-201715838138-A
Country	US
Kind code	B2
Filing date	Dec 11, 2017
Priority date	Aug 5, 2014
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A display apparatus includes: a thin-film transistor including a source electrode, a drain electrode, and a gate electrode; a data line in a layer different from the source electrode, the drain electrode, and the gate electrode, wherein the data line is configured to transmit a data signal; and a shield layer between the data line and a component of the thin-film transistor.

First claim

What is claimed is:

1. A display apparatus comprising:
a first thin-film transistor comprising a first semiconductor comprising a source area, a drain area, and a channel area between the source area and the drain area;
a first electrode layer over the first semiconductor and overlapping the channel area of the first semiconductor;
a second electrode layer over the first electrode layer, a part of the second electrode layer overlapping the first electrode layer;
a first signal line over the second electrode layer; and
a first shield layer in a layer between the first signal line and the first semiconductor and overlapping a part of one of the source area and the drain area of the first semiconductor.

2. The display apparatus of claim 1 , wherein the first shield layer is a part of the second electrode layer and overlaps a part of the first signal line.

3. The display apparatus of claim 1 , further comprising a second thin-film transistor comprising a second semiconductor, one end of the second semiconductor being connected to one end of the first semiconductor, and the other end of the second semiconductor being connected to the first signal line.

4. The display apparatus of claim 1 , further comprising a first voltage line in the same layer as the first signal line and connected to the second electrode layer.

5. The display apparatus of claim 1 , further comprising:
a third thin-film transistor comprising a third semiconductor, one end of the third semiconductor being connected to one end of the first semiconductor, and the other end of the third semiconductor being connected to the first electrode layer; and
a second shield layer in a layer between the first signal line and the third semiconductor and overlapping a part between a first channel area and a second channel area of the third semiconductor.

6. The display apparatus of claim 1 , further comprising:
a fourth thin-film transistor comprising a fourth semiconductor, one end of the fourth semiconductor being connected to the first electrode layer, and the other end of the fourth semiconductor being connected to a second voltage line; and
a third shield layer in a layer between the first signal line and the fourth semiconductor and overlapping a part of the fourth semiconductor.

7. The display apparatus of claim 1 , further comprising:
a fourth thin-film transistor comprising a fourth semiconductor, one end of the fourth semiconductor being connected to the first electrode layer, and the other end of the fourth semiconductor being connected to a second voltage line; and
a third shield layer in a layer between the first signal line and the fourth semiconductor and overlapping a part between a first channel area and a second channel area of the fourth semiconductor.

8. The display apparatus of claim 1 , wherein the first signal line extends in a first direction, and
wherein a length along the first direction of the overlapping part of the first shield layer with the part of one of the source area and the drain area of the first semiconductor is larger than a length of the first electrode layer along the first direction.

9. The display apparatus of claim 1 , wherein the first shield layer fully overlaps the part of one of the source area and the drain area of the first semiconductor.

10. The display apparatus of claim 1 , wherein the first signal line extends in a first direction, and
wherein a length along the first direction of the overlapping part of the first shield layer with the first signal line is larger than a length of the first electrode layer along the first direction.

11. The display apparatus of claim 5 , wherein a gate electrode of the third thin-film transistor comprises a first gate electrode and a second gate electrode in a same layer, the first gate electrode overlapping the first channel area of the third semiconductor, and the second gate electrode overlapping the second channel area of the third semiconductor, and
wherein the gate electrode of the third thin-film transistor is a part of a second signal line crossing the first signal line and is in the same layer as the first electrode layer.

12. The display apparatus of claim 5 , further comprising a first voltage line in the same layer as the first signal line,
wherein the second shield layer is connected to the first voltage line.

13. The display apparatus of claim 5 , wherein the second shield layer is a part of the second electrode layer.

14. The display apparatus of claim 5 , further comprising a connecting line connecting the other end of the third semiconductor and the first electrode layer and being in the same layer as the first signal line.

15. The display apparatus of claim 6 , wherein a gate electrode of the fourth thin-film transistor comprises a first gate electrode and a second gate electrode in a same layer and overlapping the fourth semiconductor, and
wherein the third shield layer is a part of the second voltage line and overlaps a part of the fourth semiconductor between the first gate electrode and the second gate electrode.

16. The display apparatus of claim 15 , wherein the gate electrode of the fourth thin-film transistor is a part of a third signal line crossing the first signal line and is in the same layer as the first electrode layer.

17. The display apparatus of claim 7 , wherein the third shield layer is a part of the second voltage line.

18. The display apparatus of claim 7 , wherein a gate electrode of the fourth thin-film transistor comprises a first gate electrode and a second gate electrode in a same layer, the first gate electrode overlapping the first channel area of the fourth semiconductor, and the second gate electrode overlapping the second channel area of the fourth semiconductor, and
wherein the gate electrode of the fourth thin-film transistor is a part of a third signal line crossing the first signal line and is in the same layer as the first electrode layer.

19. The display apparatus of claim 7 , further comprising a connecting line connecting the one end of the fourth semiconductor and the first electrode layer and being in the same layer as the first signal line.

20. The display apparatus of claim 3 , further comprising a fifth thin-film transistor comprising a fifth semiconductor, one end of the fifth semiconductor being connected to the one end of the first semiconductor and the one end of the second semiconductor, and the other end of the fifth semiconductor being connected to a first voltage line,
wherein the first voltage line in the same layer as the first signal line and connected to the second electrode layer.

21. The display apparatus of claim 20 , further comprising a fourth shield layer in a layer between the first signal line and the fifth semiconductor,
wherein the fourth shield layer overlaps a part of semiconductor between the channel area of the first semiconductor, the channel area of the second semiconductor, and the channel area of the fifth semiconductor.

22. The display apparatus of claim 21 , wherein the fourth shield layer is a part of the second electrode layer.

23. The display apparatus of claim 22 , further comprising a capacitor comprising a first capacitor plate and a second capacitor plate,
wherein the first capacitor plate is a part of the first electrode layer, and the second capacitor plate is a part of the second electrode layer.

24. A display apparatus comprising:
a first thin-film transistor comprising a

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Yangwan
• Kwak Wonkyu
• Noh Jaedu
• Lee Jaeyong

Classifications

• G02F1/136213

  Storage capacitors associated with the pixel electrode · CPC title

• H01L27/3272 Primary

  Electricity · mapped topic

• H01L27/3265

  Electricity · mapped topic

• H01L27/124

  Electricity · mapped topic

• H01L27/3276

  Electricity · mapped topic