Thin film transistor array substrate and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10032953-B2
Application number	US-201313943893-A
Country	US
Kind code	B2
Filing date	Jul 17, 2013
Priority date	Sep 24, 2012
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A thin film transistor array substrate and a method for manufacturing the same are disclosed. The thin film transistor array substrate includes a plurality of pixel units defined by a cross structure of gate lines with data lines and power lines on a substrate. Each of the pixel units includes a driving unit, which includes a switching thin film transistor and a driving thin film transistor receiving a signal from the gate line, the data line, and the power line, and a capacitor storing a signal; and a light emitting unit emitting light on a pixel electrode receiving a driving current from the driving thin film transistor. Each of a plurality of shielding patterns is positioned under the switching thin film transistor and the driving thin film transistor of the pixel unit.

First claim

What is claimed is:

1. A thin film transistor array substrate comprising:
a plurality of pixel units defined by a cross structure of a gate line with a data line and a power line on a substrate, each of the plurality of pixel units including:
a driving unit, which includes a switching thin film transistor and a driving thin film transistor receiving a signal from the gate line, the data line, and the power line, and a capacitor storing a signal;
a light emitting unit emitting light on a pixel electrode receiving a driving current from the driving thin film transistor; and
a shielding pattern overlapping with each of the capacitor, the switching thin film transistor and the driving thin film transistor of each pixel unit,
wherein the shielding pattern of the pixel unit is connected to adjacent shielding patterns through a shielding line that is parallel with and overlaps with the power line.

2. The thin film transistor array substrate of claim 1 , wherein the shielding line is connected to a constant voltage driver outside an active area of the thin film transistor.

3. The thin film transistor array substrate of claim 1 , wherein the driving thin film transistor has a top gate structure, and the shielding line is positioned to overlap the power line.

4. The thin film transistor array substrate of claim 1 , wherein the driving thin film transistor is located on a buffer layer positioned on the substrate, and the shielding pattern is positioned under the buffer layer.

5. The thin film transistor array substrate of claim 2 , wherein a constant voltage from the constant voltage driver is applied to the shielding pattern through the shielding line.

6. The thin film transistor array substrate of claim 1 , wherein the shielding pattern has a multi-layer structure.

7. The thin film transistor array substrate of claim 1 , wherein the driving thin film transistor includes an active layer which contains oxide and is dehydrated from hydrogen or hydroxide ions.

8. The thin film transistor array substrate of claim 1 , wherein the shielding pattern is positioned under and overlaps with each of the capacitor, the switching thin film transistor and the driving thin film transistor of the pixel unit, without overlapping with the light emitting unit.

9. The thin film transistor array substrate of claim 1 , wherein the shielding pattern is formed with an opening that entirely exposes the light emitting unit without overlapping the light emitting unit.

Assignees

• Lg Display Co Ltd

Inventors

• Jeon Jinchae
• Cho Kisul

Classifications

• H01L29/78648

  Electricity · mapped topic

• H01L33/0041 Primary

  Electricity · mapped topic

• H01L29/78633

  Electricity · mapped topic

• H01L27/124

  Electricity · mapped topic

• H01L27/1225

  Electricity · mapped topic