Organic light emitting diode display device
US-2017207288-A1 · Jul 20, 2017 · US
US10438976B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10438976-B2 |
| Application number | US-201916243702-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 9, 2019 |
| Priority date | Oct 18, 2016 |
| Publication date | Oct 8, 2019 |
| Grant date | Oct 8, 2019 |
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A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.
Opening claim text (preview).
What is claimed is: 1. A display device, comprising: a substrate; a first gate metal wire that is disposed on the substrate; a first insulation layer that covers the first gate metal wire; a second gate metal wire that is disposed on the first insulation layer; a second main insulation layer that covers the second gate metal wire; a second auxiliary insulation layer that is disposed on the second main insulation layer; and a first data metal wire that is disposed on the second main insulation layer and the second auxiliary insulation layer, wherein: an upper surface of the second auxiliary insulation layer is disposed on the same horizontal plane as a part of an upper surface of the second main insulation layer, the uppermost layer of the second main insulation layer includes a silicon nitride, and the second auxiliary insulation layer includes a silicon oxide. 2. The display device as claimed in claim 1 , further comprising: a third main insulation layer that covers the first data metal wire; a third auxiliary insulation layer that is disposed on the third main insulation layer; and a second data metal wire that is disposed on the third main insulation layer and the third auxiliary insulation layer, wherein: an upper surface of the third auxiliary insulation layer is disposed on the same horizontal plane as a part of an upper surface of the third main insulation layer, and the third main insulation layer includes a silicon nitride. 3. The display device as claimed in claim 2 , wherein a part of the upper surface of the third main insulation layer that is disposed between the first data metal wire and the second data metal wire directly contacts the second data metal wire. 4. The display device as claimed in claim 3 , wherein a thickness of the third main insulation layer is smaller than a thickness of the second main insulation layer.
the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title
the material being a silicon oxide, e.g. SiO2 · CPC title
involving a dielectric removal step · CPC title
comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title
Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor (abrasive blasting machines B24C3/26) · CPC title
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