Substrate treatment device

Patent metadata

Field	Value
Publication number	US-10438823-B2
Application number	US-201414913229-A
Country	US
Kind code	B2
Filing date	Aug 4, 2014
Priority date	Aug 23, 2013
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A heating apparatus includes a plurality of zone heating apparatuses and a control apparatus. The reference variable of the control apparatus is a susceptor temperature. The controlled variable of the control apparatus is an actual temperature of the susceptor measured by a temperature sensor and the manipulated variable of the control apparatus is the total heating power fed into the heating apparatus. A heating power distributor receives the total heating power as an input variable and provides a zone heating power for each of the zone heating apparatuses as output variables. The sum of the zone heating powers corresponds to the total heating power and the zone heating powers have a specified ratio with respect to each other. In order to specify a robust control loop, the specified ratios are defined by distribution parameters, wherein at least one distribution parameter is a quotient of two zone heating powers.

First claim

What is claimed is:

1. A device for treating substrates, comprising a susceptor ( 7 ) which is disposed in a process chamber ( 6 ) and has a first side ( 7 ′) that faces towards the process chamber ( 6 ) for accommodating at least one substrate ( 15 ) and a second side ( 7 ″) that faces away therefrom and is heated by a heating apparatus having a plurality of zone heating apparatuses, and comprising a control apparatus, a reference variable of which is a susceptor temperature (T S ), a control variable of which is an actual temperature of the susceptor ( 7 ) measured by a temperature sensor ( 10 ), and a manipulated variable of which is a total heating power (P tot ) fed into the heating apparatus, comprising a heating power distributor ( 12 ) which receives only the total heating power (P tot ) as an input variable and which provides a zone heating power (P 1 , P 2 , P 3 , P 4 , P 5 ) for each of the zone heating apparatuses ( 1 , 2 , 3 , 4 , 5 ) as output variables,
wherein a sum of the zone heating powers (P 1 , P 2 , P 3 , P 4 , P 5 ) corresponds to the total heating power (P tot ),
wherein the zone heating powers (P 1 , P 2 , P 3 , P 4 , P 5 ) have specified ratios with respect to one another,
wherein the specified ratios are specified by pre-selected distribution parameters (A, B, C, D),
wherein the susceptor ( 7 ) has a circular disk shape,
wherein a plurality of substrate holders ( 8 ) is disposed annularly about a center of the susceptor ( 7 ), each of the substrate holders ( 8 ) having a rotational axis and being configured to rotate about said rotational axis,
wherein the zone heating apparatuses ( 1 , 2 , 3 , 4 , 5 ) are disposed annularly about the center of the susceptor ( 7 ) in such a manner that a middle one of the zone heating apparatuses ( 1 ) is disposed below respective centers of the substrate holders ( 8 ), a radially inner one of the zone heating apparatuses ( 3 ) is disposed in a region below an inner edge of the annular arrangement of the substrate holders ( 8 ), and a radially outer one of the zone heating apparatuses ( 2 ) is disposed in a region below an outer edge of the annular arrangement of the substrate holders ( 8 ),
wherein a first one of the pre-selected distribution parameters (A, C) (i) is a quotient of the zone heating power fed into the radially outer zone heating apparatus ( 2 ) and the zone heating power fed into the radially inner zone heating apparatus ( 3 ), and (ii) controls a temperature of respective circumferential edge zones of the substrate holders ( 8 ),
wherein the radially outer zone heating apparatus ( 2 ) is radially non-adjacent to the radially inner zone heating apparatus ( 3 ), and
wherein a second one of the pre-selected distribution parameters (B) (i) specifies a ratio of the zone heating power (P 1 ) fed into the middle zone heating apparatus ( 1 ) to the total heating power (P tot ), and (ii) controls a temperature of respective central zones of the substrate holders ( 8 ).

2. The device according to claim 1 , further comprising at least one further pair of zone heating apparatuses ( 4 , 5 ), in which the zone heating powers (P 4 , P 5 ) fed into the further pair of zone heating apparatuses ( 4 , 5 ) have a specified ratio (C) with respect to one another.

3. The device according to claim 1 , wherein the zone heating apparatuses ( 1 , 2 , 3 , 4 , 5 ) are high-frequency coils for outputting a high-frequency alternating field, which induce eddy currents in the susceptor ( 7 ).

4. A method for treating substrates, in which at least one substrate ( 15 ) is disposed on a first side ( 7 ′) of a susceptor ( 7 ) which is disposed in a process chamber ( 6 ) and the second side ( 7 ″) of which facing away from the first side ( 7 ′) is heated by a heating apparatus having at least three zone heating apparatuses ( 1 , 2 , 3 , 4 , 5 ) annularly disposed about a center of the susceptor ( 7 ),
wherein a total heating power (P tot ) fed into the heating apparatus is controlled by a controller ( 11 ), a reference variable of which is a susceptor temperature (T S ), a control variable of which is an actual temperature of the susceptor ( 7 ) measured by a temperature sensor ( 10 ), and a manipulated variable of which is only the total heating power (P tot ),
wherein a heating power distributor ( 12 ) feeds a zone heating power (P 1 , P 2 , P 3 , P 4 , P 5 ) into each of the zone heating apparatuses ( 1 - 5 ), a sum of which is the total heating power (P tot ), and
wherein the distribution of the total heating power (P tot ) among the individual zone heating powers (P 1 , P 2 , P 3 , P 4 , P 5 ) is carried out according to pre-selected distribution parameters (A, B, C, D),
wherein on the first side ( 7 ′) of the susceptor ( 7 ), a plurality of substrate holders ( 8 ) is disposed annularly about the center of the susceptor ( 7 ), each of the substrate holders ( 8 ) having a rotational axis and being configured to rotate about said rotational axis,
wherein a middle one of the zone heating apparatuses ( 1 ) is disposed below the respective centers of the substrate holders ( 8 ), a radially inner one of the zone heating apparatuses ( 3 ) is disposed in a region below an inner edge of the annular arrangement of the substrate holders ( 8 ), and a radially outer one of the zone heating apparatuses ( 2 ) is disposed in a region below an outer edge of the annular arrangement of the substrate holders ( 8 ),
wherein a first one of the pre-selected distribution parameters (A, C) (i) is a quotient of the zone heating power fed into the radially outer zone heating apparatus ( 2 ) and the zone heating power fed into the radially inner zone heating apparatus ( 3 ), and (ii) controls a temperature of respective circumferential edge zones of the substrate holders ( 8 ),
wherein the radially outer zone heating apparatus ( 2 ) is radially non-adjacent to the radially inner zone heating apparatus ( 3 ), and
wherein a further one of the pre-selected distribution parameters (B) (i) specifies a ratio of the zone heating power (P 1 ) fed into the middle zone heating apparatus ( 1 ) to the total heating power (P tot ), and (ii) controls a temperature of respective central zones of the substrate holders ( 8 ).

5. The method according to claim 4 , further comprising at least one further pair of zone heating apparatuses ( 4 , 5 ), wherein the zone heating powers (P 4 , P 5 ) fed into the at least one further pair of zone heating apparatuses ( 4 , 5 ) have a specified ratio (C) with respect to one another.

6. The method according to claim 4 , wherein the pre-selected distribution parameters (A, B, C, D) are adapted to a total gas pressure set in the process chamber ( 6 ).

7. The method according to claim 4 , wherein the pre-selected distribution parameters (A, B, C, D) are adapted to a maximum process temperature.

8. The method according to claim 4 , wherein temperature ramps are implemented with the pre-selected distribution parameters (A, B, C, D) being kept at a fixed value.

9. The method according to claim 4 , wherein the pre-selected distribution parameters (A, B, C, D) are determined through simulation calculations.

10. The method according to claim 4 , wherein the pre-selected distribution parameters (A, B, C, D) are determined through measurements in preliminary tests.

11. The method according claim 4 , wherein the pre-selected distribution parameters (A, B, C, D) are determined through simulation calculations and through measurements in preliminary tests.

Assignees

• Aixtron Se

Inventors

• Brien Daniel

Classifications

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0432 Primary

  mainly by conduction · CPC title

• H05B1/0233

  for semiconductors manufacturing · CPC title