Metrology by reconstruction

US10437158B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10437158-B2
Application numberUS-201616060192-A
CountryUS
Kind codeB2
Filing dateDec 16, 2016
Priority dateDec 31, 2015
Publication dateOct 8, 2019
Grant dateOct 8, 2019

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  1. Title

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Disclosed herein is a method comprising: obtaining a plurality of measurement results from a pattern on a substrate respectively using a plurality of substrate measurement recipes, the substrate processed by a lithography process; reconstruct, using a computer, the pattern using the plurality of measurement results, to obtain a reconstructed pattern.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: obtaining a plurality of measurement results from a pattern on a substrate respectively using a plurality of substrate measurement recipes performed by a metrology apparatus that illuminates the pattern with radiation, the substrate processed by a lithography process; and reconstructing, using a computer, the pattern using the plurality of measurement results, to obtain a reconstructed pattern; wherein each of the plurality of substrate measurement recipes corresponds to one of a plurality of diffraction-based optical measurements to the pattern defined by a plurality of parameterized models respectively, each measurement result is a diffraction image obtained by using one corresponding substrate measurement recipe, and a reconstruction algorithm depends on the plurality of parameterized models. 2. The method of claim 1 , wherein reconstructing the pattern is by using a Algebraic Reconstruction Technique, Radon transform, or projection-slice theorem. 3. The method of claim 1 , wherein reconstructing the pattern does not use an entirety of each of the plurality of measurement results. 4. The method of claim 1 , wherein at least two of the plurality of substrate measurement recipes differ in intensity distribution at a pupil plane of a metrology tool used in obtaining the measurement results. 5. The method of claim 1 , wherein at least two of the plurality of substrate measurement recipes differ in a wavelength or a polarization of light used in obtaining the measurement results. 6. The method of claim 1 , wherein the pattern has at least one of an asymmetry, a tilted bottom, and a tilted sidewall. 7. The method of claim 1 , wherein obtaining a plurality of measurement results comprises illuminating the pattern with ultraviolet light or X-ray. 8. The method of claim 1 , further comprising determining an edge placement error or a dimension using the reconstructed pattern. 9. The method of claim 1 , further comprising aligning a patterning device to the pattern using the reconstructed pattern. 10. The method of claim 1 , further comprising determining alignment between two sub-patterns of the pattern, wherein the two sub-patterns are on different layers of the substrate. 11. The method of claim 1 , further comprising determining a true value of a measured characteristic of the pattern, using the reconstructed pattern. 12. The method of claim 1 , further comprising determining a systematic error of a measured characteristic of the pattern, using the reconstructed pattern. 13. A computer program product comprising a non-transitory computer readable medium having instructions recorded thereon, the instructions when executed by a computer implementing the method of claim 1 .

Assignees

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Classifications

  • Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title

  • Diffractive optical elements · CPC title

  • Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system · CPC title

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What does patent US10437158B2 cover?
Disclosed herein is a method comprising: obtaining a plurality of measurement results from a pattern on a substrate respectively using a plurality of substrate measurement recipes, the substrate processed by a lithography process; reconstruct, using a computer, the pattern using the plurality of measurement results, to obtain a reconstructed pattern.
Who is the assignee on this patent?
Asml Netherlands Bv
What technology area does this patent fall under?
Primary CPC classification G03F7/70625. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 08 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).