Alumina sintered body and base substrate for optical device
US-2018230020-A1 · Aug 16, 2018 · US
Oriented alumina substrate for epitaxial growth
US10435815B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10435815-B2 |
| Application number | US-201815902266-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2018 |
| Priority date | Sep 30, 2015 |
| Publication date | Oct 8, 2019 |
| Grant date | Oct 8, 2019 |
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Abstract
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An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.
First claim
Opening claim text (preview).
What is claimed is: 1. An oriented alumina substrate for epitaxial growth, comprising: alumina crystalline grains constituting a surface of the oriented alumina substrate, the alumina crystalline grains having a tilt angle of 0.4° to 0.98° and an average sintered grain size of 10 μm or more. 2. The oriented alumina substrate for epitaxial growth according to claim 1 , wherein the alumina crystalline grains constituting the surface of the oriented alumina substrate have an average sintered grain size of 20 μm or more. 3. The oriented alumina substrate for epitaxial growth according to claim 1 , wherein the content of each of Na, Mg, Si, P, Ca, Fe, Ti, and Zn is 1,500 ppm or less. 4. The oriented alumina substrate for epitaxial growth according to claim 2 , wherein the content of each of Na, Mg, Si, P, Ca, Fe, Ti, and Zn is 1,500 ppm or less. 5. The oriented alumina substrate for epitaxial growth according to claim 1 , wherein the content of Mg is 15 ppm or more. 6. The oriented alumina substrate for epitaxial growth according to claim 2 , wherein the content of Mg is 15 ppm or more. 7. The oriented alumina substrate for epitaxial growth according to claim 3 , wherein the content of Mg is 15 ppm or more. 8. The oriented alumina substrate for epitaxial growth according to claim 4 , wherein the content of Mg is 15 ppm or more.
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Classifications
used as a support during build up manufacturing of active devices · CPC title
used as a support during the manufacture of self-supporting substrates · CPC title
Nitrides · CPC title
Crystal orientations · CPC title
being crystalline insulating materials · CPC title
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Frequently asked questions
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- What does patent US10435815B2 cover?
- An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.
- Who is the assignee on this patent?
- Ngk Insulators Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B29/20. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 08 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).