Image sensor and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-10431625-B2
Application number	US-201715796994-A
Country	US
Kind code	B2
Filing date	Oct 30, 2017
Priority date	Apr 10, 2017
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

An image sensor may include: a trench formed in a substrate; an impurity region formed in the substrate to be in contact with the trench; and a re-crystallization layer formed in the substrate to be in contact with bottom and side surfaces of the trench and a surface of the substrate. The re-crystallization layer may contain one or more kinds of elements different from an element constituting the substrate.

First claim

What is claimed is:

1. An image sensor comprising:
a substrate including a first element;
a trench formed in the substrate, the trench defining a light receiving region and a readout region isolated from each other by the trench;
an impurity region formed in the substrate in contact with the trench; and
a re-crystallization layer formed in the substrate in contact with bottom and side surfaces of the trench and a surface of the substrate, the re-crystallization layer having a first portion disposed in the light receiving region and a second portion disposed in the readout region,
wherein the first portion of the re-crystallization layer includes a second element,
wherein the second portion of the re-crystallization layer includes a third element which is different from the second element, and
wherein the second and third elements are different from the first element wherein the second element contained in the first re-crystallization layer disposed in the light receiving region includes at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn); and
wherein the third element contained in the first re-crystallization layer disposed in the readout region includes at least one of carbon (C), silicon (Si), germanium (Ge), nitrogen (N), oxygen (O), and fluorine (F).

2. The image sensor of claim 1 , further comprising:
a photoelectric conversion element formed in the substrate,
wherein the photoelectric conversion element comprises the impurity region.

3. The image sensor of claim 1 , wherein the trench has rounded corners.

4. The image sensor of claim 1 , wherein the re-crystallization layer is continuously formed along the surface of the substrate, which includes the bottom and side surfaces of the trench.

5. The image sensor of claim 1 , wherein the first element comprises silicon, and the second and third elements are selected from the group comprising metalloid elements, nonmetallic elements, and combinations thereof among group 14 to 18 elements.

6. An image sensor comprising:
a substrate having a first surface and a second surface facing the first surface, the substrate including a first element;
a trench formed at the first surface of the substrate, the trench dividing the substrate into a light receiving region and a readout region;
an impurity region formed in the substrate in contact with the trench;
a first re-crystallization layer formed in the substrate in contact with bottom and side surfaces of the trench and the first surface of the substrate, the first re-crystallization layer having a first portion disposed in the light receiving region and a second portion disposed in the readout region; and
a second re-crystallization layer formed in the substrate in contact with the second surface of the substrate,
wherein each of the first and second re-crystallization layers contains second and third elements which are different from each other and different from the first element, and
wherein the first re-crystallization layer disposed in the light receiving region contains the second element and the first re-crystallization layer disposed in the readout region contains the third element wherein the second element contained in the first re-crystallization layer disposed in the light receiving region includes at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn), and wherein the third element contained in the first re-crystallization layer disposed in the readout region includes at least one of carbon (C), silicon (Si), germanium (Ge), nitrogen (N), oxygen (O), and fluorine (F).

7. The image sensor of claim 6 , further comprising:
a photoelectric conversion element formed in the substrate,
wherein the photoelectric conversion element comprises the impurity region.

8. The image sensor of claim 6 , wherein the trench has rounded corners.

9. The image sensor of claim 6 , wherein the first re-crystallization layer is continuously formed along the first surface of the substrate, which includes the bottom and side surfaces of the trench, and the second re-crystallization layer is continuously formed along the second surface of the substrate.

10. The image sensor of claim 6 , wherein the first element comprises silicon, and the second and third elements are selected from the group comprising metalloid elements, nonmetallic elements, and combinations thereof among group 14 to 18 elements.

11. The image sensor of claim 6 ,
wherein the second and third elements contained in the second re-crystallization layer include at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn).

12. An image sensor comprising:
a substrate having a light receiving region and a readout region;
a first re-crystallization layer formed in the light receiving region and the readout region in the substrate to be in contact with a trench and a first surface of the substrate,
wherein:
the light receiving region has a photoelectric conversion element,
the readout region has a transistor,
the substrate comprises a first element,
the first re-crystallization layer disposed in the light receiving region comprises the first element and a second element different from the first element,
the first re-crystallization layer disposed in the readout region comprises the first element and a third element different from the first and second elements wherein the second element includes at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn), and
wherein the third element includes at least one of carbon (C), silicon (Si), germanium (Ge), nitrogen (N), oxygen (O), and fluorine (F).

13. The image sensor of claim 12 , further comprising:
a second re-crystallization layer formed in the substrate to be in contact with a second surface of the substrate opposite to the first surface of the substrate,
wherein the second re-crystallization layer comprises the first element and the third element.

14. The image sensor of claim 12 , further comprising:
the trench is between the light receiving region and the readout region,
wherein the light receiving region and the readout region are isolated from each other by the trench.

Assignees

• Sk Hynix Inc

Inventors

• Kim Byoung-Gyu

Classifications

• H04N25/63

  applied to dark current · CPC title

• H01L27/1463

  Electricity · mapped topic

• H04N5/361

  Electricity · mapped topic

• H01L27/14698 Primary

  Electricity · mapped topic

• H01L27/14645

  Electricity · mapped topic