Display substrate having an organic layer and fabricating method thereof

Patent metadata

Field	Value
Publication number	US-10431607-B2
Application number	US-201615533159-A
Country	US
Kind code	B2
Filing date	Nov 24, 2016
Priority date	Jun 17, 2016
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

The present application discloses a method of fabricating a display substrate having an organic layer for reducing parasitic capacitance between electrodes in different layers. The method includes forming the organic layer on a base substrate; subjecting the organic layer to a surface treatment process to descum organic residues from a surface of the organic layer; and forming a passivation layer on a side of the organic layer distal to the base substrate subsequent to subjecting the organic layer to the surface treatment process.

First claim

What is claimed is:

1. A method of fabricating a display substrate having an organic layer, comprising:
forming the organic layer on a base substrate to reduce parasitic capacitance between electrodes in different layers of the display substrate;
subsequent to forming the organic layer, forming a first electrode layer on a side of the organic layer away from the base substrate, the first electrode layer formed in direct contact with the organic layer;
subjecting the organic layer to a surface treatment process to descum organic residues from a surface of the organic layer; and
subsequent to forming the first electrode layer and subsequent to subjecting the organic layer to the surface treatment process, forming an inorganic insulating passivation layer on a side of the organic layer and the first electrode layer away from the base substrate, wherein the inorganic insulating passivation layer is formed in direct contact with the first electrode layer and in direct contact with the organic layer, the inorganic insulating passivation layer is formed so that an orthographic projection of the inorganic insulating passivation layer on the base substrate substantially covers orthographic projections of the first electrode layer and the organic layer.

2. The method of claim 1 , wherein the surface treatment process includes treating the surface of the organic layer with a plasma;
reacting the organic residues with the plasma to form one or more reaction products; and
removing the one or more reaction products from the display substrate.

3. The method of claim 2 , wherein the plasma comprises one or more of nitrous oxide, oxygen, and nitrogen.

4. The method of claim 2 , wherein a power level for maintaining the plasma is in a range of approximately 2 kw to approximately 25 kw.

5. The method of claim 4 , wherein the power level for maintaining the plasma is in a range of approximately 8 kw to approximately 15 kw.

6. The method of claim 3 , wherein the surface of the organic layer is treated with the plasma for a duration in a range of approximately 5 seconds to approximately 120 seconds.

7. The method of claim 6 , wherein the surface of the organic layer is treated with the plasma for a duration in a range of approximately 10 seconds to approximately 60 seconds.

8. The method of claim 3 , wherein the one or more reaction products comprise carbon oxides and nitrogen oxides; and
removing the one or more reaction products is performed by vacuuming.

9. The method of claim 1 , wherein the surface treatment process is performed at a temperature in a range of approximately 170 degrees to approximately 500 degrees in a system maintained with a power level in a range of approximately 1 kw to approximately 50 kw.

10. The method of claim 1 , wherein the organic layer is made of one or more of polyacrylate, polysilane, polyimide, polyvinylidene fluoride, polypropylene, and polytetrafluoroethylene.

11. The method of claim 1 , wherein the inorganic insulating passivation layer comprises an inorganic material.

12. The method of claim 1 , wherein the surface treatment process is performed subsequent to forming the first electrode layer and prior to forming the inorganic insulating passivation layer.

13. The method of claim 1 , wherein the surface treatment process is performed prior to forming the first electrode layer and prior to forming the inorganic insulating passivation layer.

14. The method of claim 1 , wherein the first electrode layer is a pixel electrode layer.

15. The method of claim 14 , further comprising forming a second electrode layer on a side of the inorganic insulating passivation layer away from the organic layer;
wherein the second electrode layer is a common electrode layer.

16. The method of claim 1 , prior to forming the organic layer, further comprising forming a thin film transistor on the base substrate;
wherein the thin film transistor is formed on a side of the organic layer proximal to the base substrate.

17. The method of claim 16 , wherein forming the thin film transistor comprises forming an active layer;
wherein the active layer is forming using one of a metal oxide material, amorphous silicon, polycrystalline silicon, and an organic semiconductor.

18. A display substrate fabricated by a method of claim 1 .

19. A display panel, comprising a display substrate of claim 18 .

20. A display apparatus, comprising a display panel of claim 19 .

Assignees

• Boe Technology Group Co Ltd
• Hefei Xinsheng Optoelectronics Technology Co Ltd

Inventors

• Zou Zhixiang
• Yang Chengshao
• Song Botao
• Huang Yinhu

Classifications

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6528

  In-situ cleaning after layer formation, e.g. removing process residues · CPC title

• H10P14/687

  the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• G02F2202/02

  organic material · CPC title