Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices
US-9546090-B1 · Jan 17, 2017 · US
US10429453B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10429453-B2 |
| Application number | US-201715458499-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 14, 2017 |
| Priority date | Mar 15, 2016 |
| Publication date | Oct 1, 2019 |
| Grant date | Oct 1, 2019 |
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The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, an adhesive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the adhesive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the magnetic flux converging plate by electroplating on a base conductive layer formed on a plating substrate prepared separately from the semiconductor substrate, application of an adhesive for forming the adhesive layer onto a surface of the magnetic flux converging plate so that the magnetic flux converging plate adheres to the back surface of the semiconductor substrate, and peeling off of the plating substrate afterward from the base conductive layer formed on the magnetic flux converging plate.
Opening claim text (preview).
What is claimed is: 1. A magnetic sensor, comprising: a semiconductor substrate having Hall elements on a front surface thereof; an adhesive layer directly in contact with a back surface of the semiconductor substrate opposite to the front surface; a magnetic flux converging plate having a first surface in contact with the adhesive layer, such that the adhesive layer bonds the first surface of the magnetic flux converging plate to the back surface of the semiconductor substrate; and a conductive layer on a second surface of the magnetic flux converging plate opposite to the first surface. 2. A magnetic sensor according to claim 1 , wherein the semiconductor substrate has a thickness of from 100 μm to 400 μm. 3. A magnetic sensor according to claim 1 , wherein the magnetic flux converging plate has a thickness of from 20 μm to 50 μm. 4. A magnetic sensor, comprising: a semiconductor substrate having Hall elements on a front surface thereof; an adhesive layer directly in contact with a back surface of the semiconductor substrate opposite to the front surface; a magnetic flux converging plate having a first surface in contact with the adhesive layer, such that the adhesive layer bonds the first surface of the magnetic flux converging plate to the back surface of the semiconductor substrate, wherein the magnetic sensor further comprising a conductive layer comprising copper on a second surface of the magnetic flux converging plate opposite to the first surface. 5. A magnetic sensor according to claim 4 , wherein the semiconductor substrate has a thickness of from 100 μm to 400 μm. 6. A magnetic sensor according to claim 4 , wherein the magnetic flux converging plate has a thickness of from 20 μm to 50 μm.
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