Ultrasound sensor and driving method therefor
US-2016284972-A1 · Sep 29, 2016 · US
US10424722B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10424722-B2 |
| Application number | US-201615354277-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 17, 2016 |
| Priority date | Nov 27, 2015 |
| Publication date | Sep 24, 2019 |
| Grant date | Sep 24, 2019 |
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Provided is a piezoelectric element containing no lead therein and having a satisfactory piezoelectric constant and a small dielectric loss tangent at room temperature (25° C.) In order to attain this, the piezoelectric element includes a substrate, a first electrode, a piezoelectric film, and a second electrode. The piezoelectric film contains barium zirconate titanate, manganese, and trivalent bismuth. The piezoelectric film satisfies 0.02≤x≤0.13, where x is a mole ratio of zirconium to the sum of zirconium and titanium. A manganese content is 0.002 moles or more and 0.015 moles or less for 1 mole of barium zirconate titanate, and a bismuth content is 0.00042 moles or more and 0.00850 moles or less for 1 mole of barium zirconate titanate.
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What is claimed is: 1. A piezoelectric element, comprising: a substrate; a first electrode; a piezoelectric film; and a second electrode, wherein the piezoelectric film comprises a perovskite metal oxide comprising barium zirconate titanate, manganese, and trivalent bismuth, wherein the trivalent bismuth comprises trivalent bismuth positioned at an A site of the perovskite metal oxide, wherein the piezoelectric film satisfies 0.02≤x≤0.13, where x is a mole ratio of zirconium to a sum of zirconium and titanium, wherein a manganese content is 0.002 moles to 0.015 moles for 1 mole of barium zirconate titanate, and wherein a bismuth content is 0.00042 moles to 0.00850 moles for 1 mole of barium zirconate titanate, and wherein a maximum film thickness T P nm of the piezoelectric film at a portion sandwiched between the first electrode and the second electrode is 10 μm or less. 2. The piezoelectric element according to claim 1 , wherein the piezoelectric film comprises a principal component comprising the perovskite metal oxide expressed by general formula (1): Ba(Ti 1-x Zr x )O 3 (1), provided that 0.02≤x≤0.13. 3. The piezoelectric element according to claim 1 , wherein an average (T E1 +T E2 )/2 of a maximum film thickness T E1 nm and a minimum film thickness T E2 nm of the first electrode and the second electrode is in a range of 0.002×T P ≤(T E1 +T E2 )/2≤500 nm. 4. The piezoelectric element according to claim 1 , further comprising an adhesion component comprising a metal of Group 4 elements and/or Group 5 elements, and existing between the substrate and one of the first electrode and the second electrode that is formed on a surface of the piezoelectric film on a substrate side. 5. The piezoelectric element according to claim 1 , wherein the piezoelectric film has an aggregate structure comprising a grain having a columnar structure. 6. The piezoelectric element according to claim 1 , wherein the piezoelectric film has residual stress therein in a direction in parallel with a surface of the substrate. 7. The piezoelectric element according to claim 1 , wherein a Curie temperature of the piezoelectric film is 121° C. or higher. 8. The piezoelectric element according to claim 1 , wherein a crystal forming a perovskite structure of the piezoelectric film is selectively oriented in a direction perpendicular to a surface of the substrate. 9. A piezoelectric actuator, comprising: the piezoelectric element of claim 1 ; and a vibration unit in which the piezoelectric element is formed. 10. A shake correction mechanism, comprising two or more piezoelectric actuators, each being the piezoelectric actuator of claim 9 , wherein the two or more piezoelectric actuators are arranged such that, when a voltage is applied thereto, the two or more piezoelectric actuators expand and contract in two or more directions. 11. An optical device, comprising: the shake correction mechanism of claim 10 ; and an optical member held by the shake correction mechanism. 12. An image pickup apparatus, comprising: the shake correction mechanism of claim 10 ; and an image pickup element unit held by the shake correction mechanism. 13. A variable shape optical element, comprising: the piezoelectric actuator of claim 9 ; an optical member dynamically connected to the piezoelectric actuator; and a mechanism for changing a shape of the optical member through deformation of the piezoelectric actuator. 14. An optical device, comprising the variable shape optical element of claim 13 . 15. An optical switch, comprising the variable shape optical element of claim 13 . 16. A movable optical member, comprising: the piezoelectric actuator of claim 9 ; an optical member dynamically connected to the piezoelectric actuator; and a mechanism for moving and/or rotating the optical member through deformation of the piezoelectric actuator. 17. An optical device, comprising the movable optical member of claim 16 . 18. An optical switch, comprising the movable optical member of claim 16 . 19. A micromirror device, comprising: a plurality of micromirrors; and a plurality of piezoelectric actuators dynamically connected to the plurality of micromirrors, respectively, wherein each of the plurality of piezoelectric actuators is the piezoelectric actuator of claim 9 . 20. An ultrasonic wave probe, comprising the piezoelectric actuator of claim 9 and configured to oscillate an ultrasonic wave and to receive a reflected wave. 21. An ultrasonograph, comprising: the ultrasonic wave probe of claim 20 ; a signal processing unit; and an image generating unit. 22. A sound component, comprising the piezoelectric actuator of claim 9 and configured to perform one of sending and receiving sound through driving of the piezoelectric actuator. 23. A liquid ejection head, comprising: a liquid chamber comprising a vibration unit comprising the piezoelectric element of claim 1 ; and an ejection orifice communicating with the liquid chamber. 24. A liquid ejection apparatus, comprising: a placing unit for a transfer target; and the liquid ejection head of claim 23 . 25. An angular velocity sensor, comprising the piezoelectric element of claim 1 and configured to convert change in shape of the piezoelectric element into angular velocity information. 26. A vibration power generator, comprising the piezoelectric element of claim 1 and configured to convert vibrational energy into electric energy. 27. The piezoelectric element according to claim 1 , wherein T P nm is 500 nm to 5,000 nm. 28. The piezoelectric element according to claim 1 , wherein T P nm is 700 nm to 4,000. 29. The piezoelectric element according to claim 1 , wherein T P nm is 1,000 nm to 3,500 nm. 30. A piezoelectric element, comprising: a substrate; a piezoelectric film; and a plurality of comb electrodes, wherein the piezoelectric film comprises a perovskite metal oxide comprising barium zirconate titanate, manganese, and trivalent bismuth, wherein the trivalent bismuth comprises trivalent bismuth positioned at an A site of the perovskite metal oxide, wherein the piezoelectric film satisfies 0.02≤x≤0.13, where x is a mole ratio of zirconium to a sum of zirconium and titanium, wherein a manganese content is 0.002 moles to 0.015 moles for 1 mole of barium zirconate titanate, and wherein a bismuth content is 0.00042 moles to 0.00850 moles for 1 mole of barium zirconate titanate. 31. The piezoelectric element according to claim 30 , wherein the piezoelectric film comprises a principal component comprising the perovskite metal oxide expressed by general formula (1): Ba(Ti 1-x Zr x )O 3 (1), provided that 0.02≤x≤0.13. 32. A surface acoustic wave generator, comprising the piezoelectric element of claim 30 . 33. A piezoelectric shutter, comprising: the surface acoustic wave generator of claim 32 ; and a light-shielding component, wherein the piezoelectric shutter is configured to move the light-shielding component through driving of the surface acoustic wave generator. 34. An electronic apparatus, comprising: an electronic component; and a piezoelectric element, wherein the piezoelectric element comprises: a substrate; a first electrode; a
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performed by mechanical compensation · CPC title
Manufacturing; Trimming; Mounting; Housings · CPC title
Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719 · CPC title
Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor {(manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182)} · CPC title
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