Ultra-high charge density electrets and method of making same

Patent metadata

Field	Value
Publication number	US-10424441-B2
Application number	US-201715803155-A
Country	US
Kind code	B2
Filing date	Nov 3, 2017
Priority date	Jul 5, 2017
Publication date	Sep 24, 2019
Grant date	Sep 24, 2019

Abstract

An ultra-high charge density electret is disclosed. The ultra-high charge density electret includes a three-dimensional structure having a plurality of sidewalls. A porous silicon dioxide film is formed on the plurality of sidewalls, and the porous silicon dioxide film is charged with a plurality of positive or negative ions.

First claim

What is claimed is:

1. A transmitter system, comprising:
an ultra-high charge density electret comprising:
a three-dimensional structure;
a plurality of sidewalls on the three-dimensional structure; and a porous silicon dioxide film formed on the plurality of sidewalls, wherein the porous silicon dioxide film is charged with a plurality of positive or negative ions
a modulator comprising the ultra-high charge density electret: and
a signal processor coupled to the modulator, wherein circuitry within the modulator physically moves the ultra-high charge density electret to generate a signal in response to receiving a signal from the signal processor.

2. The transmitter system of claim 1 , wherein the three-dimensional structure is a pyramid-shaped silicon structure.

3. The transmitter system of claim 1 , wherein the three-dimensional structure is formed on a surface of a silicon wafer.

4. The transmitter system of claim 1 , wherein the three-dimensional structure is at least one of a trench-shaped, pillar-shaped, or spike-shaped silicon structure.

5. The transmitter system of claim 1 , further comprising a plurality of three-dimensional structures.

6. The transmitter system of claim 5 , wherein the plurality of three-dimensional structures comprises an array of three-dimensional structures.

7. A system, comprising:
a text message processor;
a broadcast processor coupled to an output of the text message processor;
a signal processor coupled to an output of the broadcast processor;
a modulator coupled to an output of the signal processor;
a power amplifier coupled to an output of the modulator;
an antenna coupled to an output of the power amplifier, wherein the modulator includes a plurality of ultra-high charge density electrets, comprising:
a plurality of three-dimensional structures;
a plurality of sidewalls on each one of the plurality of three-dimensional structures; and
a porous silicon dioxide film formed on the plurality of sidewalls, wherein the porous silicon dioxide film is charged with a plurality of positive or negative ions; and

wherein circuitry within the modulator physically moves the ultra-high charge density electrets to generate a signal in response to the output of the signal processor.

8. The system of claim 7 , wherein each one of the plurality of three-dimensional structures is a pyramid-shaped silicon structure.

9. The system of claim 7 , wherein the plurality of three-dimensional structures are formed on a surface of a silicon wafer or die.

10. The system of claim 7 , wherein each one of the plurality of three-dimensional structures is at least one of a trench-shaped, pillar-shaped, or spike-shaped silicon structure.

11. The system of claim 7 , wherein the plurality of three-dimensional structures comprises an array of three-dimensional structures.

12. The system of claim 7 , wherein the plurality of ultra-high charge density electrets are components of an electromechanical circuit configured to generate a Very Low Frequency (VLF) signal.

Assignees

• Honeywell Int Inc

Inventors

• Tin Steven
• Krueger Neil

Classifications

• B81C1/00515

  Bulk micromachining techniques not provided for in B81C1/00507 · CPC title

• B81C2201/0115

  Porous silicon · CPC title

• H04B1/04

  Circuits · CPC title

• H01G7/025 Primary

  having an inorganic dielectric · CPC title

• H02N1/08

  with conductive charge carrier, i.e. capacitor machines · CPC title