Semiconductor Device and Method for Manufacturing a Semiconductor Device
US-2015069394-A1 · Mar 12, 2015 · US
US10414683B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10414683-B2 |
| Application number | US-201615206880-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 11, 2016 |
| Priority date | Jun 26, 2013 |
| Publication date | Sep 17, 2019 |
| Grant date | Sep 17, 2019 |
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A method for cutting a substrate of irregular pattern comprises: forming a cutting line on the substrate, wherein the closed region enclosed by the cutting line is the irregular pattern that is required; forming a trough line at the cutting line; and applying an external force to the substrate so as to divide the substrate at the trough line. The method can remarkably improve accuracy and efficiency of cutting a substrate of irregular pattern.
Opening claim text (preview).
The invention claimed is: 1. A method for cutting a substrate into an irregular pattern, comprising: forming a cutting line on the substrate, wherein the cutting line encloses a region having the irregular pattern, the substrate is a glass substrate or a quartz substrate; cutting the substrate along the cutting line by using a laser beam to form a trough line at the cutting line; and applying an external force onto the substrate so as to divide the substrate at the trough line, wherein forming the cutting line on the substrate comprises: coating the substrate with photoresist to cover the entire substrate; and performing exposure by means of a mask plate and development, such that the photoresist generates an entirely-retained region and a completely-removed region, wherein a boundary line of the photoresist entirely-retained region coincides with the cutting line. 2. The method according to claim 1 , wherein applying the external force on the substrate so as to divide the substrate at the trough line comprises: applying the external force on the substrate so as to divide the substrate at the trough line through ultrasonic wave. 3. The method according to claim 2 , wherein a frequency range for the ultrasonic wave is between 20 KHz to 500 MHz. 4. The method according to claim 1 , after applying the external force on the substrate so as to divide the substrate at the trough line, further comprising: performing a corner-trimming and/or edge-grinding process on an edge of the substrate comprising the irregular pattern.
Inorganic materials other than metals or composite materials · CPC title
Successive distinct removal operations · CPC title
Glass products comprising an outer layer or surface coating of non-glass material · CPC title
Cutting or splitting in curves, especially for making spectacle lenses · CPC title
taking account of the properties of the material involved · CPC title
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