Fabrication of semiconductor junctions
US-9620360-B1 · Apr 11, 2017 · US
Fabrication of semiconductor junctions
US10411092B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10411092-B2 |
| Application number | US-201715445145-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2017 |
| Priority date | Nov 27, 2015 |
| Publication date | Sep 10, 2019 |
| Grant date | Sep 10, 2019 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method comprises providing a cavity structure on the substrate comprising a first growth channel extending in a first direction, a second growth channel extending in a second direction, wherein the second direction is different from the first direction and the second channel is connected to the first channel at a channel junction, a first seed surface in the first channel, at least one opening for supplying precursor materials to the cavity structure, selectively growing from the first seed surface a first semiconductor structure substantially only in the first direction and in the first channel, thereby forming a second seed surface for a second semiconductor structure at the channel junction, growing in the second channel the second semiconductor structure in the second direction from the second seed surface, thereby forming the semiconductor junction comprising the first and the second semiconductor structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising a semiconductor junction, the semiconductor junction comprising: a first semiconductor structure grown in a first direction from a first seed in a first cavity, the first semiconductor structure abutting the first seed, the first semiconductor structure comprising a different material from the first seed; and a second semiconductor structure grown in a second direction in a second cavity from a seed surface of the first semiconductor structure such that the first semiconductor structure is a second seed abutting the second semiconductor structure, wherein the second direction is perpendicular to the first direction. 2. The semiconductor device according to claim 1 , wherein the semiconductor device is a photodiode or a light emitting device. 3. The semiconductor device according to claim 1 , wherein a channel junction is formed at an intersection of the first cavity and the second cavity. 4. The semiconductor device according to claim 1 , wherein the second semiconductor structure extends to form two arms opposite one another in the second direction in the second cavity. 5. The semiconductor device according to claim 1 , wherein the first seed comprises silicon. 6. The semiconductor device according to claim 1 , wherein the first semiconductor structure comprises a higher carrier mobility than the first seed.
Assignees
Inventors
Classifications
Arsenides · CPC title
Chemical etching · CPC title
Antimonides · CPC title
Arsenides · CPC title
Silicon, silicon germanium or germanium · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10411092B2 cover?
- A method comprises providing a cavity structure on the substrate comprising a first growth channel extending in a first direction, a second growth channel extending in a second direction, wherein the second direction is different from the first direction and the second channel is connected to the first channel at a channel junction, a first seed surface in the first channel, at least one openin…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10P14/276. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 10 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).