Methods for providing lithography features on a substrate by self-assembly of block copolymers

Patent metadata

Field	Value
Publication number	US-10410914-B2
Application number	US-201515313515-A
Country	US
Kind code	B2
Filing date	May 13, 2015
Priority date	May 28, 2014
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

A method of forming at least one lithography feature, the method including: providing at least one lithography recess on a substrate, the or each lithography recess having at least one side-wall and a base, with the at least one side-wall having a width between portions thereof; providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess; causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer including at least a first domain of first blocks and a second domain of second blocks; causing the self-assemblable block copolymer to cross-link in a directional manner; and selectively removing the first domain to form lithography features of the second domain within the or each lithography recess.

First claim

The invention claimed is:

1. A method of forming at least one lithography feature, the method comprising:
providing at least one lithography recess on a substrate, the or each lithography recess comprising at least one side-wall made of resist and a base, with the at least one side-wall having a width between portions thereof and the providing the lithography recess comprising performing a lithography exposure of the resist with radiation to activate a photo-acid generator in the resist and then developing the resist to form the at least one lithography recess;
providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess;
causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer comprising at least a first domain of first blocks and a second domain of second blocks;
heating the previously lithography exposed and developed resist to a temperature sufficient to cause diffusion of acid from the resist into the self-assemblable block copolymer when otherwise the acid would effectively not diffuse into the self-assemblable block copolymer and/or further exposing the previously lithography exposed and developed resist to radiation;
causing, by acid from the heated and/or further exposed resist, the self-assemblable block copolymer to cross-link in a directional manner; and
selectively removing the first domain to form lithography features comprised of the second domain within the or each lithography recess.

2. The method according to claim 1 , wherein the cross-linking is initiated at the at least one side-wall and proceeds away from the at least one sidewall.

3. The method according to claim 1 , comprising the heating of the previously lithography exposed and developed resist and wherein causing the self-assemblable block copolymer to cross-link takes place during the heating.

4. The method according to claim 1 , wherein the block copolymer comprises polystyrene blocks and glycidyl moieties.

5. The method according to claim 4 , wherein the polystyrene blocks comprise more than about 0.1% by weight of glycidyl moieties.

6. The method according to claim 4 , wherein the polystyrene blocks comprise less than about 10% by weight of glycidyl moieties.

7. The method according to claim 1 , wherein the acid is generated by the photo-acid generator.

8. The method according to claim 7 , wherein the acid is at least partially generated by the photo-acid generator during the lithography exposure.

9. The method according to claim 7 , comprising the further exposing of the previously lithography exposed and developed resist to radiation, wherein the further exposing comprises a flood exposure, and wherein acid is at least partially generated by a photo-acid generator during the flood exposure.

10. A method of forming at least one lithography feature on a substrate, the substrate comprising at least one lithography recess, the or each lithography recess comprising at least one side-wall and a base, with the at least one side-wall having a width between portions thereof, the method comprising:
providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess;
causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer comprising at least a first domain of first blocks and a second domain of second blocks;
providing, from the at least one side-wall and/or the base of the or each lithography recess against which the self-assemblable block copolymer rests, a material to interact with the self-assemblable block copolymer to cause the self-assemblable block copolymer to cross-link in a directional manner, wherein the material, at a time of self-assembly of the self-assemblable block copolymer, makes up about 1% or more by weight of such at least one side-wall and/or base; and
selectively removing the first domain to form lithography features comprised of the second domain within the or each lithography recess.

11. A method of forming at least one lithography feature on a substrate, the substrate comprising at least one lithography recess, the or each lithography recess comprising at least one side-wall and a base, with the at least one side-wall having a width between portions thereof, the method comprising:
providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess;
causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer comprising at least a first domain of first blocks and a second domain of second blocks; and
providing, from a surface of the at least one side-wall and/or the base of the or each lithography recess against which the self-assemblable block copolymer rests, a material to interact with the self-assemblable block copolymer to cause the self-assemblable block copolymer to cross-link in a directional manner, wherein the at least one side-wall and/or the base having the surface is formed of a material different than the material to interact with the self-assemblable block copolymer to cause the self-assemblable block copolymer to cross-link or different than a material containing the material to interact with the self-assemblable block copolymer to cause the self-assemblable block copolymer to cross-link.

12. The method according to claim 11 , wherein the cross-linking is initiated at the at least one side-wall and proceeds away from the at least one sidewall.

13. The method according to claim 11 , wherein the block copolymer comprises polystyrene blocks and glycidyl moieties.

14. The method according to claim 13 , wherein the polystyrene blocks comprise more than about 0.1% by weight of glycidyl moieties.

15. The method according to claim 13 , wherein the polystyrene blocks comprise less than about 10% by weight of glycidyl moieties.

16. The method according to claim 10 , wherein the cross-linking is initiated at the at least one side-wall and proceeds away from the at least one sidewall.

17. The method according to claim 10 , wherein the providing of the material takes place during a heating of the at least one side-wall and/or the base of the or each lithography recess.

18. The method according to claim 10 , wherein the at least one side-wall and/or the base of the or each lithography recess was formed by an exposure and development process and comprising further exposing the or each previously exposed and developed lithography recess to radiation.

19. The method according to claim 10 , wherein the block copolymer comprises polystyrene blocks and glycidyl moieties.

20. The method according to claim 10 , wherein the material is acid in a resist forming the at least one side-wall and/or the base of the or each lithography recess.

Assignees

• Asml Netherlands Bv

Inventors

• Wuister Sander Frederik
• Jeunink Andre Bernardus
• Peeters Emiel

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/693

  characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane · CPC title

• H10W20/074

  of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers · CPC title

• H10W20/089 Primary

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title