CVD based oxide-metal multi structure for 3D NAND memory devices

Patent metadata

Field	Value
Publication number	US-10410869-B2
Application number	US-201715633366-A
Country	US
Kind code	B2
Filing date	Jun 26, 2017
Priority date	Jun 28, 2016
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

First claim

The invention claimed is:

1. A method, comprising:
placing a substrate into a processing chamber;
forming a seed layer on the substrate; and
forming a metal layer on the seed layer, wherein the forming a metal layer on the seed layer comprises:
increasing a temperature of the substrate to a processing temperature;
flowing a metal-containing precursor and nitrogen gas into the processing chamber, wherein a ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 10:1 to 1:2; and
forming a plasma inside of the processing chamber by igniting the metal-containing precursor and nitrogen gas with a high frequency radio frequency power and a low frequency radio frequency power.

2. The method of claim 1 , wherein the metal layer comprises cobalt, molybdenum, tungsten, tantalum, titanium, ruthenium, rhodium, copper, iron, manganese, vanadium, niobium, hafnium, zirconium, yttrium, aluminum, tin, chromium, or lanthanum.

3. The method of claim 1 , wherein the processing temperature ranges from about 350 degrees Celsius to about 450 degrees Celsius.

4. The method of claim 3 , wherein the low frequency radio frequency power ranges from about 0.071 W/cm 2 to about 0.283 W/cm 2 .

5. A method, comprising:
placing a substrate into a processing chamber;
forming a seed layer on the substrate, wherein the seed layer comprises titanium nitride, molybdenum nitride, tungsten nitride, amorphous boron, or amorphous silicon and
forming a metal-containing layer on the seed layer, wherein the forming a metal-containing layer on the substrate comprises:
increasing a temperature of the substrate to a processing temperature;
flowing a metal-containing precursor and nitrogen gas into the processing chamber, wherein a ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 10:1 to 1:3; and
forming a plasma inside of the processing chamber by igniting the metal-containing precursor and nitrogen gas with a high frequency radio frequency power and a low frequency radio frequency power.

6. The method of claim 5 , wherein the metal-containing layer comprises cobalt, molybdenum, tungsten, tantalum, titanium, ruthenium, rhodium, copper, iron, manganese, vanadium, niobium, hafnium, zirconium, yttrium, aluminum, tin, chromium, or lanthanum.

7. The method of claim 5 , wherein the processing temperature ranges from about 350 degrees Celsius to about 450 degrees Celsius.

8. The method of claim 7 , wherein the low frequency radio frequency power ranges from about 0.071 W/cm 2 to about 0.283 W/cm 2 .

9. The method of claim 8 , wherein the ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 10:1 to 1:2.

10. The method of claim 5 , wherein the processing temperature ranges from about 500 degrees Celsius to about 600 degrees Celsius.

11. The method of claim 10 , wherein the ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 5:1 to 1:3.

12. The method of claim 11 , wherein the low frequency radio frequency power ranges from about 0.071 W/cm 2 to about 0.566 W/cm 2 .

13. A method, comprising:
placing a substrate into a processing chamber;
forming a seed layer on the substrate; and
forming a metal layer on the seed layer, wherein the forming a metal layer on the seed layer comprises:
increasing a temperature of the substrate to a processing temperature;
flowing a metal-containing precursor and nitrogen gas into the processing chamber, wherein a ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 5:1 to 1:3; and
forming a plasma inside of the processing chamber by igniting the metal-containing precursor and nitrogen gas with a high frequency radio frequency power and a low frequency radio frequency power.

14. The method of claim 13 , wherein the metal layer comprises cobalt, molybdenum, tungsten, tantalum, titanium, ruthenium, rhodium, copper, iron, manganese, vanadium, niobium, hafnium, zirconium, yttrium, aluminum, tin, chromium, or lanthanum.

15. The method of claim 13 , wherein the processing temperature ranges from about 500 degrees Celsius to about 600 degrees Celsius.

16. The method of claim 15 , wherein the ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas is about 2:1.

17. The method of claim 16 , wherein the low frequency radio frequency power ranges from about 0.071 W/cm 2 to about 0.566 W/cm 2 .

Assignees

• Applied Materials Inc

Inventors

• Singha Roy Susmit
• Chan Kelvin
• Le Hien Minh
• Kamath Sanjay
• Mallick Abhijit Basu
• Gandikota Srinivas
• Janakiraman Karthik

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title

• H10P14/6506

  Formation of intermediate materials · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title

• H10P14/3241

  being conductive materials · CPC title