Static memory cell capable of balancing bit line leakage currents

Patent metadata

Field	Value
Publication number	US-10410687-B2
Application number	US-201816108106-A
Country	US
Kind code	B2
Filing date	Aug 22, 2018
Priority date	Jan 3, 2018
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

A static memory cell capable of balancing bit line leakage currents is characterized by including a 1st PMOS transistor, a 2nd PMOS transistor, a 1st NMOS transistor, a 2nd NMOS transistor, a 3rd NMOS transistor, a 4th NMOS transistor, a 5th NMOS transistor, a 6th NMOS transistor, a 7th NMOS transistor, an 8th NMOS transistor, a write word line, a read word line, a read bit line, an inverted read bit line, a write bit line and an inverted write bit line. The 1st NMOS transistor, the 2nd NMOS transistor, the 3rd NMOS transistor and the 4th NMOS transistor are all normal threshold NMOS transistors. The 1st PMOS transistor and the 2nd PMOS transistor are both low threshold PMOS transistors. The 5th NMOS transistor, the 6th NMOS transistor, the 7th NMOS transistor and the 8th NMOS transistor are all low threshold NMOS transistors. The static memory cell has the advantages of high read operation speed, low power consumption and high stability under low operating voltage conditions.

First claim

What is claimed is:

1. A static memory cell capable of balancing bit line leakage currents, characterized in that comprises
a 1 st PMOS transistor;
a 2 nd PMOS transistor;
a 1 st NMOS transistor;
a 2 nd NMOS transistor;
a 3 rd NMOS transistor;
a 4 th NMOS transistor;
a 5 th NMOS transistor;
a 6 th NMOS transistor;
a 7 th NMOS transistor;
an 8 th NMOS transistor;
a write word line;
a read word line;
a read bit line;
an inverted read bit line;
a write bit line; and
an inverted write bit line,
wherein a source terminal of the 1 st PMOS transistor, a source terminal of the 2 nd PMOS transistor, a drain terminal of the 6 th NMOS transistor and a drain terminal of the 8 th NMOS transistor are connected to a power terminal of the static memory cell, wherein the power terminal of the static memory cell is to be accessed to a power voltage,
wherein a gate terminal of the 1 st PMOS transistor, a gate terminal of the 1 st NMOS transistor, a drain terminal of the 2 nd PMOS transistor, a drain terminal of the 2 nd NMOS transistor, a drain terminal of the 4 th NMOS transistor, a gate terminal of the 5 th NMOS transistor and a gate terminal of the 8 th NMOS transistor are connected to an inverted output terminal of the static memory cell,
wherein a drain terminal of the 1 st PMOS transistor, a drain terminal of the 1 st NMOS transistor, a gate terminal of the 2 nd PMOS transistor, a gate terminal of the 2 nd NMOS transistor, a drain terminal of the 3 rd NMOS transistor, a gate terminal of the 7 th NMOS transistor and gate terminal of the 6 th NMOS transistor are connected to an output terminal of the static memory cell,
wherein a source terminal of the 1 st NMOS transistor and a source terminal of the 2 nd NMOS transistor are both ground voltage,
wherein a gate terminal of the 3 rd NMOS transistor and a gate terminal of the 4 th NMOS transistor are connected to the write word line,
wherein a source terminal of the 3 rd NMOS transistor is connected to the write bit line, and a source terminal of the 4 th NMOS transistor is connected to the inverted write bit line,
wherein a drain terminal of the 5 th NMOS transistor and a source terminal of the 6 th NMOS transistor are connected to the inverted read bit line,
wherein a source of the 5 th NMOS transistor and a source terminal of the 7 th NMOS transistor are connected to the read word line,
wherein a drain terminal of the 7 th NMOS transistor and a terminal source of the 8 th NMOS transistor are connected to the read bit line,
wherein the 1 st NMOS transistor, the 2 nd NMOS transistor, the 3 rd NMOS transistor and the 4 th NMOS transistor are all normal threshold NMOS transistors, wherein the 1 st PMOS transistor and the 2 rd PMOS transistor are both low threshold PMOS transistors. The 5 th NMOS transistor, the 6 th NMOS transistor, the 7 th NMOS transistor and the 8 th NMOS transistor are all low threshold NMOS transistors.

2. A static memory cell capable of balancing bit line leakage currents according to claim 1 , characterized in that the power voltage is 0.3 V.

Assignees

• Univ Ningbo

Inventors

• Wang Pengjun
• Zhou Keji
• Zhang Yuejun
• Zhang Huihong

Classifications

• G11C11/412

  using field-effect transistors only · CPC title

• G11C8/16

  Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups · CPC title

• G11C5/06 Primary

  Arrangements for interconnecting storage elements electrically, e.g. by wiring · CPC title

• G11C11/419 Primary

  Read-write [R-W] circuits · CPC title

• G11C7/12

  Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines · CPC title