Method for calculating surface electric field distribution of nanostructures

Patent metadata

Field	Value
Publication number	US-10408871-B2
Application number	US-201715598223-A
Country	US
Kind code	B2
Filing date	May 17, 2017
Priority date	May 20, 2016
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

The disclosure relates to a method for calculating surface electric field distribution of nanostructures. The method includes the following steps of: providing a nanostructure sample located on an insulated layer of a substrate; spraying first charged nanoparticles to the insulated surface; blowing vapor to the insulated surface and imaging the first charged nanoparticles via an optical microscope, recording the width w between the first charged nanoparticles and the nanostructure sample, and obtaining the voltage U of the nanostructure sample by an equation.

First claim

What is claimed is:

1. A method for calculating surface electric field distribution of nanostructures, the method comprising the following steps of:
providing a nanostructure sample located on an insulated layer of a substrate;
spraying first charged nanoparticles onto the insulated layer, wherein the first charged nanoparticles and the nanostructure sample are all positively charged or all negatively charged;
blowing vapor to the insulated layer and imaging the first charged nanoparticles via an optical microscope, and recording a width w between the first charged nanoparticles and the nanostructure sample, and
obtaining a voltage U of the nanostructure sample by an equation

w
=

(

F
c

32
⁢

(

U
-

U
0

)

⁢

D
2

⁢

ln
⁡

(

2
⁢

D
/
d

2

1
/

ϵ
r

)

)

-
1

/
3

,

⁢

 wherein F c is a constant force from the first charged nanoparticles flow, U 0 is a threshold voltage of the nanostructure sample, D is a thickness of the insulated layer, d is a diameter of the nanostructure sample, ϵ r equals to ϵ/ϵ 0 , ϵ is a permittivity of the insulated layer, and ϵ 0 is a permittivity of vacuum.

2. The method as claimed in claim 1 , wherein the nanostructure sample is zero-dimensional nanomaterials, one-dimensional nanomaterials, or two-dimensional nanomaterials.

3. The method as claimed in claim 2 , wherein the nanostructure sample is carbon nanotubes.

4. The method as claimed in claim 2 , wherein the nanostructure sample is ultra-long semiconducting carbon nanotubes.

5. The method as claimed in claim 1 , wherein the substrate is a silicon substrate with a silicon dioxide layer located on a surface of the silicon substrate.

6. The method as claimed in claim 1 , wherein a diameter of the first charged nanoparticles ranges from about 0.5 nanometers to about 5 nanometers.

7. The method as claimed in claim 1 , wherein the first charged nanoparticles are crystals difficult to sublimate.

8. The method as claimed in claim 1 , wherein the first charged nanoparticles are all positively charged or all negatively charged.

9. The method as claimed in claim 1 , wherein the first charged nanoparticles are charged glucose nanoparticles, charged sucrose nanoparticles or charged metal salt nanoparticles.

10. The method as claimed in claim 1 , wherein the vapor is water vapor or ethanol vapor.

11. A method for calculating surface electric field distribution of nanostructures, the method comprising the following steps of:
providing a nanostructure sample located on an insulated layer of a substrate and a vapor-condensation-assisted optical microscope system comprising a vapor-condensation-assisted device and an optical microscope comprising a stage, wherein the vapor-condensation-assisted device is configured to provide vapor;
locating the substrate having the nanostructure sample thereon on the stage;
spraying first charged nanoparticles to the insulated layer, wherein the first charged nanoparticles and the nanostructure sample are all positively charged or all negatively charged;
blowing vapor to the insulated layer and imaging the first charged nanoparticles via the optical microscope, and recording a width w between the first charged nanoparticles and the nanostructure sample, and
obtaining a voltage U of the nanostructure sample by an equation

w
=

(

P
c

32
⁢

(

U
-

U
0

)

⁢

D
2

⁢

ln
⁡

(

2
⁢

D
/
d

2

1
/

ϵ
r

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Wang Jiang-Tao
• Jin Xiang
• Liu Peng
• Wei Yang
• Jiang Kai-Li
• Fan Shou-Shan

Classifications

• G01R15/165

  measuring electrostatic potential, e.g. with electrostatic voltmeters or electrometers, when the design of the sensor is essential (electrometers with passively moving electrodes G01R5/28; measuring electrostatic fields G01R29/12; measuring charge G01R29/24; measuring in circuits with high internal resistance G01R19/0023) · CPC title

• G01R29/24

  Arrangements for measuring quantities of charge · CPC title

• G01R19/0023

  Measuring currents or voltages from sources with high internal resistance by means of measuring circuits with high input impedance, e.g. OP-amplifiers (electrostatic instruments G01R5/28; measuring electrostatic potential G01R15/165; measuring electrostatic fields G01R29/12; amplifiers per se H03F) · CPC title

• G01R29/12

  Measuring electrostatic fields {or voltage-potential} · CPC title

• G01N21/00 Primary

  Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light (G01N3/00 - G01N19/00 take precedence) · CPC title