Aluminum electroplating and oxide formation as barrier layer for aluminum semiconductor process equipment
US-2017260639-A1 · Sep 14, 2017 · US
US10407789B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10407789-B2 |
| Application number | US-201715835067-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 7, 2017 |
| Priority date | Dec 8, 2016 |
| Publication date | Sep 10, 2019 |
| Grant date | Sep 10, 2019 |
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In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.
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The invention claimed is: 1. A method of depositing a material on a substrate, comprising: positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor; depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide, wherein depositing the coating comprises: applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate; and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate; wherein the first current is between about −150 milliamperes (mA) and about −60 mA and the second current is between about −50 mA and about −30 mA; and wherein the first time-period is between about 60 seconds and about 300 seconds and the second time-period is between about 20 minutes and about 5 hours. 2. The method of claim 1 , wherein the electroplating solution comprises the non-aqueous solvent and a second solvent in a ratio of between 4:1 and 1:4. 3. The method of claim 1 , wherein the aluminum substrate comprises Al6061 or Al6063 alloy. 4. The method of claim 1 , wherein the deposition precursor comprises AlCl 3 or Al(NO 3 ) 3 . 5. The method of claim 4 , wherein the deposition precursor has a concentration within a range of about 0.3 M to about 1 M. 6. The method of claim 1 , wherein the electroplating solution further comprises a supporting electrolyte. 7. The method of claim 6 , wherein the deposition precursor has a concentration within a range of about 0.1 M to about 0.3 M. 8. The method of claim 1 , wherein depositing the coating comprises pulsing the first current on and off. 9. The method of claim 1 , wherein the coating has a thickness of between about 100 nanometers to about 2 micrometers. 10. A method of depositing a material on a substrate, comprising: positioning an aluminum-containing substrate having one or more plenums formed therein in an electroplating solution, the electroplating solution comprising: a deposition precursor comprising AlCl 3 , Al(NO 3 ) 3 , or an aluminum alkyl; and a non-aqueous solvent; and depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide, wherein depositing the coating comprises: applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate, wherein the first current is pulsed; and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate; wherein the first time-period is between about 60 seconds and about 300 seconds and the second time-period is between about 20 minutes and about 5 hours; and wherein the first current is between about −150 milliamperes (mA) and about −60 mA and the second current is between about −50 mA and about −30 mA. 11. The method of claim 10 , wherein the first current is pulsed-on for a third time-period of between about 30 milliseconds and about 70 milliseconds and the first current is pulsed-off for a fourth time-period of between about 10 milliseconds and about 20 milliseconds. 12. The method of claim 10 , further comprising: removing excess plating solution from the aluminum-containing substrate, wherein removing the excess plating solution comprises washing and drying the aluminum-containing substrate; and post-treating the aluminum-containing substrate having the coating thereon. 13. The method of claim 12 , wherein the post-treating comprises exposing the aluminum-containing substrate to an ozone plasma. 14. A method of depositing a material on a substrate, comprising: positioning an aluminum-containing substrate having one or more plenums formed therein in an electroplating solution, the electroplating solution comprising: a deposition precursor comprising AlCl 3 , Al(NO 3 ) 3 , or an aluminum alkyl; a non-aqueous solvent; and a supporting electrolyte; depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide, wherein depositing the coating comprises: applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate, wherein the first current is pulsed; and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate; wherein the first time-period is between about 60 seconds and about 300 seconds and the second time-period is between about 20 minutes and about 5 hours; and wherein the first current is between about −150 milliamperes (mA) and about −60 mA and the second current is between about −50 mA and about −30 mA.
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