Flexible display panel

Patent metadata

Field	Value
Publication number	US-10403645-B2
Application number	US-201715681110-A
Country	US
Kind code	B2
Filing date	Aug 18, 2017
Priority date	Sep 3, 2014
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 Å, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 Å.

First claim

What is claimed is:

1. A flexible display panel including a bending area and a peripheral area adjacent to the bending area, the flexible display panel comprising:
a base member;
a barrier layer on the base member; and
a pixel on the barrier layer and including a thin film transistor and a display element connected to the thin film transistor,
wherein the barrier layer includes at least one first silicon nitride layer overlapped with the bending area, at least one first silicon oxide layer overlapped with the bending area, at least one second silicon nitride layer overlapped with the peripheral area, and at least one second silicon oxide layer overlapped with the second silicon nitride layer, and
wherein the second silicon nitride layer has a thickness greater than the thickness of the first silicon nitride layer, and the second silicon oxide layer has a thickness greater than the thickness of the first silicon oxide layer.

2. The flexible display panel of claim 1 , wherein the peripheral area and the bending area of the barrier layer have substantially an equal thickness.

3. The flexible display panel of claim 1 , further comprising a buffer layer on the barrier layer and contacting the thin film transistor.

4. The flexible display panel of claim 3 , wherein the buffer layer includes at least one third silicon nitride layer overlapped with the bending area, at least one third silicon oxide layer overlapped with the bending area,
at least one fourth silicon nitride layer overlapped with the peripheral area, and at least one fourth silicon oxide layer overlapped with the fourth silicon nitride layer, and
wherein the fourth silicon nitride layer has a thickness greater than the thickness of the third silicon nitride layer, and wherein the fourth silicon oxide layer has a thickness greater than the thickness of the third silicon oxide layer.

5. The flexible display panel of claim 4 , wherein the peripheral area and the bending area of the buffer layer have substantially an equal thickness.

6. The flexible display panel of claim 5 , wherein a total thickness of the first silicon nitride layers is less than a total thickness of the first silicon oxide layers, and
wherein a total thickness of the third silicon nitride layers is greater than a total thickness of the third silicon oxide layers.

7. The flexible display panel of claim 3 , wherein at least one of the barrier layer and the buffer layer includes a hardness strengthening layer overlapped with the bending area.

8. The flexible display panel of claim 1 , further comprising a boundary area which is defined between the bending area and the peripheral area,
wherein the first silicon nitride layers and the first silicon oxide layers are spaced from the second silicon nitride layer and the second silicon oxide layer, respectively, with the boundary area located therebetween.

9. The flexible display panel of claim 7 , further comprising an insulation layer disposed on the barrier layer,
wherein the boundary area comprises the same material as the insulating layer.

10. The flexible display panel of claim 7 , wherein the flexible display panel is bent around a bending axis extending along a first direction, and the boundary area extends along the first direction.

11. The flexible display panel of claim 1 , wherein the first silicon nitride layer has a thickness less than or equal to about 400 Å, and wherein the first silicon oxide layer has a thickness less than or equal to about 650 Å.

12. A flexible display panel comprising:
a base member;
a barrier layer on the base member, wherein the barrier layer includes a first hardness strengthening layer; and
a pixel on the barrier layer and including a thin film transistor and a display element connected to the thin film transistor,
wherein the barrier layer includes at least one first silicon nitride layer and at least one first silicon oxide layer, and
the first hardness strengthening layer is located between a first silicon nitride layer of the at least one first silicon nitride layer and an adjacent first silicon oxide layer of the at least one first silicon oxide layer and comprises a material different from the first silicon nitride layer and the adjacent first silicon oxide layer, and
wherein the first hardness strengthening layer comprises at least one of graphene, graphene oxide, or carbon nanotube.

13. The flexible display panel of claim 12 , wherein each of the at least one first silicon nitride layer has an equal thickness, and wherein each of the at least one first silicon oxide layer has an equal thickness.

14. The flexible display panel of claim 12 , further comprising a buffer layer on the barrier layer and contacting the thin film transistor, wherein the buffer layer includes a second hardness strengthening layer.

Assignees

• Samsung Display Co Ltd
• Korea Advanced Inst Sci & Tech

Inventors

• Namkung Jun
• Han Seung Min Jane
• Kim Youbin

Classifications

• Y02E10/549

  Organic PV cells · CPC title

• H01L27/1218 Primary

  Electricity · mapped topic

• H01L51/5256

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L27/1225

  Electricity · mapped topic