Si-containing film forming precursors and methods of using the same

Patent metadata

Field	Value
Publication number	US-10403494-B2
Application number	US-201715692544-A
Country	US
Kind code	B2
Filing date	Aug 31, 2017
Priority date	Mar 30, 2015
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

First claim

What is claimed is:

1. An ALD silicon and oxygen containing film formation process, the process comprising the steps of:
depositing a silicon and oxygen containing film on a substrate by sequentially introducing a vapor of a mono-substituted TSA precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH 3 ) 2 N—SiH 2 —X, wherein X is a halogen atom or an amino group [—NR 2 ] and each R is independently selected from the group consisting of H; a C 1 -C 6 hydrocarbyl group; or a silyl group [SiR′ 3 ] with each R′ being independently selected from H or a C 1 -C 6 hydrocarbyl group.

2. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is Cl.

3. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is NiPr 2 .

4. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is NEt 2 .

5. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is N(SiH 3 ) 2 .

6. The ALD silicon and oxygen containing film formation process of claim 1 , wherein the oxygen-containing reactant is selected from the group consisting of O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , N 2 O, alcohols, diols, carboxylic acids, ketones, ethers, O atoms, O radicals, O ions, and combinations thereof.

7. The ALD silicon and oxygen containing film formation process of claim 6 , wherein the oxygen-containing reactant is plasma O 2 .

8. The ALD silicon and oxygen containing film formation process of claim 6 , wherein the silicon and oxygen containing film is silicon oxide.

9. The ALD silicon and oxygen containing film formation process of claim 6 , further comprising introducing a nitrogen-containing reactant into the reactor.

10. The ALD silicon and oxygen containing film formation process of claim 9 , wherein the nitrogen-containing reactant is selected from the group consisting of ammonia, N 2 , N atoms, N radicals, N ions, saturated or unsaturated hydrazine, amines, diamines, ethanolamine, and combinations thereof.

11. The ALD silicon and oxygen containing film formation process of claim 9 , wherein the silicon and oxygen containing film is silicon oxynitride.

12. An ALD silicon oxide film formation process, the process comprising the steps of:
depositing a silicon oxide film on a substrate at a rate ranging from approximately 2.1 A/cycle to approximately 3.1 A/cycle by sequentially introducing a vapor of a mono-substituted TSA precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH 3 ) 2 N—SiH 2 —X, wherein X is a halogen atom or an amino group [—NR 2] and each R is independently selected from the group consisting of H or a C 1 -C 6 hydrocarbyl group.

13. The ALD silicon oxide film formation process of claim 12 , wherein the oxygen-containing reactant is selected from the group consisting of O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , N 2 O, alcohols, diols, carboxylic acids, ketones, ethers, O atoms, O radicals, O ions, and combinations thereof.

14. The ALD silicon oxide film formation process of claim 13 , wherein the oxygen-containing reactant is plasma O 2 .

15. The ALD silicon oxide film formation process of claim 12 , wherein X is Cl.

16. The ALD silicon oxide film formation process of claim 12 , wherein X is NiPr 2 .

17. The ALD silicon oxide film formation process of claim 12 , wherein X is NEt 2 .

Assignees

• Air Liquide

Inventors

• Girard Jean-Marc
• Zhang Peng
• Sanchez Antonio
• Khandelwal Manish
• Itov Gennadiy
• Pesaresi Reno

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• C23C16/345

  Silicon nitride · CPC title

• C01B21/088

  containing also one or more halogen atoms · CPC title