Optimization flows of source, mask and projection optics

Patent metadata

Field	Value
Publication number	US-10401732-B2
Application number	US-201715451328-A
Country	US
Kind code	B2
Filing date	Mar 6, 2017
Priority date	Nov 10, 2010
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

First claim

What is claimed is:

1. A method for improving a lithographic process for imaging a portion of a design layout using a lithographic projection apparatus comprising projection optics, the method comprising:
obtaining a subset of patterns from the portion of the design layout and obtaining an initial illumination source;
optimizing together, by a hardware computer system, the subset of patterns, the illumination source, and the projection optics, wherein the optimizing comprising configuring a characteristic of the projection optics used to project the subset of patterns onto a radiation-sensitive substrate by using at least the illumination source, and wherein the configuring the characteristic of the projection optics comprises determining a phase shift to be introduced in the projection optics with respect to a phase of the illumination source.

2. The method of claim 1 , wherein optimizing the subset of patterns, the illumination source, and the projection optics is performed by selectively repeating:
evaluating a multi-variable cost function of a first plurality of design variables that are characteristics of the lithographic process, at least one of the plurality of design variables being a characteristic of the illumination source, at least one of the plurality of design variables being a characteristic of the subset of patterns, and at least one of the plurality of design variables being a characteristic of the projection optics; and
reconfiguring the plurality of design variables until a certain termination condition is satisfied.

3. The method of claim 2 , wherein the termination condition includes minimization of the cost function; maximization of the cost function; reaching a preset number of iterations of the reconfiguration; reaching a value of the cost function equal to or beyond a preset threshold value; reaching a predefined computation time; reaching a predefined process window; or reaching a value of the cost function within an acceptable error limit.

4. The method of claim 2 , wherein at least one of the reconfigurations is performed with a constraint dictating a range of at least one of the design variables.

5. The method of claim 4 , wherein the constraint represents a physical restriction in a hardware implementation of the lithographic projection apparatus.

6. The method of claim 5 , wherein the constraint includes one or more selected from: a tuning range, a rule governing mask manufacturability, and/or interdependence between design variables.

7. The method of claim 2 , wherein the cost function is a function of one or more selected from: edge placement error, critical dimension, resist contour distance, worst defect size, and/or best focus shift.

8. The method of claim 2 , wherein the cost function is minimized by solving polynomials, including higher-order polynomials of the design variables.

9. The method of claim 8 , wherein the cost function is expanded in terms fitting constant coefficients.

10. The method of claim 9 , wherein the fitting constant coefficients are computed from coefficients from polynomial expansion of transmission cross coefficients (TCCs).

11. The method of claim 2 , wherein the cost function comprises a characteristic of a resist image or an aerial image.

12. The method of claim 2 , wherein the cost function represents a probability of finding a hot spot in the portion of the design layout.

13. The method of claim 1 , wherein the portion of the design layout comprises one or more selected from: an entire design layout, a clip, a section of a design layout that is known to have one or more critical features, a section of the design layout where a hot spot or a warm spot has been identified from a full-chip simulation, and/or a section of the design layout where one or more critical features have been identified by a pattern selection method.

14. The method of claim 1 , wherein the obtaining comprises selecting a subset of patterns that characteristically represents features of the portion of the design layout.

15. The method of claim 1 , wherein the characteristic of the projection optics includes an adjustable parameter for shaping a wavefront in the lithographic projection apparatus.

16. The method of claim 1 , wherein the projection optics includes a wavefront manipulator configured to adjust wavefront shape, intensity distribution of an irradiation beam of the illumination source, and/or phase shift of the irradiation beam of the illumination source and the characteristic of the projection optics includes an adjustable parameter of the wavefront manipulator.

17. The method of claim 1 , further comprising a further step of tuning the subset of patterns and/or tuning the projection optics.

18. The method of claim 17 , wherein the tuning the subset of patterns and/or tuning the projection optics is performed by selectively repeating:
evaluating a further multi-variable cost function of a further plurality of design variables that are characteristics of the lithographic process, at least one design variable of the further plurality of design variables being a characteristic of the subset of patterns and/or at least one design variable of the further plurality of design variables being a characteristic of the projection optics; and
reconfiguring the set of further design variables until a further certain termination condition is satisfied.

19. A non-transitory computer readable medium having instructions recorded thereon, the instructions, when executed by a computer, configured to:
obtain a subset of patterns from a portion of a design layout to be imaged onto a substrate using a lithographic projection apparatus comprising projection optics, and obtain an initial illumination source for the imaging of the portion of the design layout; and
optimize together, by a hardware computer system, the subset of patterns, the illumination source and the projection optics, wherein the optimization comprises configuring a characteristic of the projection optics used to project the subset of patterns onto a radiation-sensitive substrate by using at least the illumination source, and wherein the configuring the characteristic of the projection optics comprises determining a phase shift to be introduced in the projection optics with respect to a phase of the illumination source.

20. The non-transitory computer readable medium of claim 19 , wherein optimization of the subset of patterns, the illumination source and the projection optics is performed by selective repetition of:
evaluation of a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least one design variable of the plurality of design variables being a characteristic of the illumination source, at least one design variable of the design variables being a characteristic of the subset of patterns and at least one design variable of the design variables being a characteristic of the projection optics; and
reconfiguration of the plurality of design variables until a certain termination condition is satisfied.

Assignees

• Asml Netherlands Bv

Inventors

• Hsu Duan-Fu
• Chen Luoqi
• Feng Hanying
• Howell Rafael C
• Zhou Xinjian
• Chen Yi-Fan

Classifications

• G03F7/70441

  Optical proximity correction [OPC] · CPC title

• G03F7/70125

  Use of illumination settings tailored to particular mask patterns (details of setting means G03F7/70091) · CPC title

• G03F7/70066 Primary

  Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds · CPC title

• G03F7/705 Primary

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G03F7/706849

  Irradiation branch, e.g. optical system details, illumination mode or polarisation control · CPC title