Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal

Patent metadata

Field	Value
Publication number	US-10396229-B2
Application number	US-201113103583-A
Country	US
Kind code	B2
Filing date	May 9, 2011
Priority date	May 9, 2011
Publication date	Aug 27, 2019
Grant date	Aug 27, 2019

Abstract

A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.

First claim

What is claimed is:

1. A method of forming a borderless interdigitated back contact solar cell comprising:
providing a lightly-doped absorber having a front surface and a back surface;
providing at least one of a first dopant type region and a first work function region disposed on said back surface;
forming trenches in said back surface;
forming sidewall spacers on trench sidewalls and only extending from the trench floors to said back surface;
providing at least one of a second dopant type region and a second work function region disposed on the trench floors between said sidewall spacers, the second regions being horizontally self-aligned to the first region by respective sidewalls spacers;
forming a dopant-segregated interface of said first dopant type on said back surface between said trenches and a dopant-segregated interface of said second dopant type on the trench floors, each said dopant-segregated interface tuning work function at the interface,
wherein the at least one of the first dopant type region and the first work function region and the at least one of the second dopant type region and the second work function region are at opposite ends of one of said sidewall spacers, and separated vertically from each other and self-aligned with respect to each other by said respective sidewalls spacers.

2. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , which further comprises doping a front surface layer having at a higher concentration of a dopant having the same doping type as the lightly doped absorber.

3. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , which further comprises providing conductive contacts to the at least one of the first dopant type region and the first work function region and to the at least one of the second dopant type region and the second work function region.

4. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , wherein the lightly doped absorber is mono crystalline or polycrystalline.

5. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , wherein the lightly doped absorber is a material selected from the group consisting of Si, Ge, and SiGe alloys.

6. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , wherein the lightly-doped absorber is n-doped.

7. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , wherein the lightly-doped absorber is p-doped.

8. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , wherein said trenches are 1-200 micrometers deep such that the at least one of the first dopant type region and the first work function region and the at least one of the second dopant type region and the second work function region are spaced-apart by a distance of from about 1 micrometer to about 200 micrometers.

9. The method for forming a borderless interdigitated back contact solar cell according to claim 8 , wherein said trenches are 5-50 micrometers deep such that the at least one of the first dopant type region and the first work function region and the at least one of the second dopant type region and the second work function region are spaced-apart by a distance of from about 5 micrometers to about 50 micrometers.

10. The method for forming borderless interdigitated back contact solar cell according to claim 1 , wherein the first dopant type is p-type, the first work function region is a high work function region, second dopant type is n-type, and the second work function region is a low work function region.

11. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , wherein the first dopant type is n-type, the first work function region is a low work function region, the second dopant type is p-type, and the second work function region is a high work function region.

12. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , wherein the at least one of the first dopant type region and the first work function region is a high work function region providing a potential difference having a magnitude of at least 0.2 volts at an interface with the lightly-doped absorber.

13. The method for forming a borderless interdigitated back contact solar cell according to claim 12 , wherein the at least one of the second dopant type region and the second work function region is a low work function region providing a potential difference having a magnitude of at least 0.2 volts at an interface with the lightly-doped absorber.

14. The method for forming a borderless interdigitated back contact solar cell according to claim 13 , wherein the high work function region is a metal-containing material selected from the group consisting of metal, metal silicide, and metal germanides, or mixtures or multi layers thereof.

15. The method for forming a borderless interdigitated back contact solar cell according to claim 14 , wherein the low work function region is a metal-containing material selected from the group consisting of metal, metal silicide, and metal germanides, or mixtures or multi layers thereof.

16. The method for forming a borderless interdigitated back contact solar cell according to claim 14 , wherein the metal is selected from the group consisting of nickel, platinum, nickel platinum, cobalt, titanium, and tungsten.

17. The method for forming a borderless interdigitated back contact solar cell according to claim 15 , wherein the metal is selected from the group consisting of nickel, platinum, nickel platinum, cobalt, titanium, and tungsten.

18. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , wherein a dopant of the lightly-doped absorber is selected from the group consisting of Al, As, B, Ga, In, P, and Sb.

19. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , wherein which forming said sidewall spacers forms insulating sidewall spacers on said trench sidewalls.

20. The method for forming a borderless interdigitated back contact solar cell according to claim 19 , wherein the insulating sidewall spacers are formed from a material selected from the group consisting of insulating oxides, insulating nitrides, ceramics, and polymers, or mixtures or multilayers of thereof.

21. The method for forming a borderless interdigitated back contact solar cell according to claim 20 , wherein the insulating oxide is silicon oxide.

22. The method for forming a borderless interdigitated back contact solar cell according to claim 20 , wherein the insulating nitride is silicon nitride.

23. The method for forming a borderless interdigitated back contact solar cell according to claim 1 , further comprising forming an antireflective coating on said front surface.

24. A method of forming a borderless interdigitated back contact solar cell comprising:
providing a lightly-doped absorber having a front surface and a back surface and trenches in said back surface;
providing at least one of a p-doped region and a high work function region disposed on the lightly-doped absorber;
providing at least one of a n-doped region and a low work function region disposed on the lightly-doped absorber, wherein the at least one of the p-doped region

Assignees

• De Souza Joel P
• Hovel Harold J
• Inns Daniel A
• Kim Jeehwan
• Lavoie Christian
• Sadana Devendra K
• Saenger Katherine L
• Shahrjerdi Davood
• Zhang Zhen
• IBM

Inventors

• De Souza Joel P
• Hovel Harold J
• Inns Daniel A
• Kim Jeehwan
• Lavoie Christian
• Sadana Devendra K
• Saenger Katherine L
• Shahrjerdi Davood
• Zhang Zhen

Classifications

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H01L31/1864

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/022441

  Electricity · mapped topic

• H01L31/0682 Primary

  Electricity · mapped topic