Ebeam staggered beam aperture array

Patent metadata

Field	Value
Publication number	US-10386722-B2
Application number	US-201415122620-A
Country	US
Kind code	B2
Filing date	Dec 19, 2014
Priority date	Jun 13, 2014
Publication date	Aug 20, 2019
Grant date	Aug 20, 2019

Abstract

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. A scan direction of the BAA is along a second direction, orthogonal to the first direction.

First claim

What is claimed is:

1. A blanker aperture array (BAA) for an e-beam tool, the BAA comprising:
a first column of openings along a first direction and having a pitch; and
a second column of openings along the first direction and staggered from the first column of openings, the second column of openings having the pitch, wherein a scan direction of the BAA is along a second direction, orthogonal to the first direction.

2. The BAA of claim 1 , wherein the first column of openings is a first single column of openings aligned in the first direction, and the second column of openings is a second single column of openings aligned in the first direction.

3. The BAA of claim 1 , wherein the pitch of the first column of openings corresponds to twice the pitch of a target pattern of lines for orientation parallel with the second direction.

4. The BAA of claim 3 , wherein the pitch of the target pattern of lines is twice the line width of the target pattern of lines.

5. The BAA of claim 1 , wherein, when scanned along the second direction, the openings of the first column of openings do not overlap with the openings of the second column of openings.

6. The BAA of claim 1 , wherein, when scanned along the second direction, the openings of the first column of openings slightly overlap with the openings of the second column of openings.

7. The BAA of claim 1 , wherein the first and second columns of openings are first and second columns of apertures formed in a thin slice of silicon.

8. The BAA of claim 7 , wherein one or more of the apertures of the first and second columns of apertures has metal there around.

9. The BAA of claim 1 , wherein the first and second columns of openings amount to a total of 4096 apertures formed in a thin slice of silicon.

10. A method of forming a pattern for a semiconductor structure, the method comprising:
forming a pattern of parallel lines above a substrate, the pattern of parallel lines having a pitch;
aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool, wherein the e-beam tool comprises a blanker aperture array (BAA) comprising a first column of openings along an array direction and a second column of openings along the array direction and staggered from the first column of openings, the first column of openings having a pitch and the second column of openings having the pitch, and the array direction orthogonal to the scan direction, and wherein the pitch of the first column of openings corresponds to twice the pitch of the pattern of parallel lines; and
forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction.

11. The method of claim 10 , wherein forming the pattern of parallel lines comprises using a pitch halving or pitch quartering technique.

12. The method of claim 10 , wherein forming the pattern of cuts or vias comprises exposing regions of a layer of photo-resist material.

13. The method of claim 10 , wherein the pitch of the pattern of parallel lines is twice the line width of each line.

14. A column for e-beam tool, the column comprising:
an electron source for providing a beam of electrons;
a limiting aperture coupled with the electron source along a pathway of the beam of the beam of electrons;
high aspect ratio illumination optics coupled with the limiting aperture along the pathway of the beam of the beam of electrons;
a shaping aperture coupled with the high aspect ratio illumination optics along the pathway of the beam of the beam of electrons;
a blanker aperture array (BAA) coupled with the shaping aperture along the pathway of the beam of the beam of electrons, the BAA comprising:
a first column of openings along a first direction and having a pitch; and
a second column of openings along the first direction and staggered from the first column of openings, the second column of openings having the pitch;

a final aperture coupled with the BAA along the pathway of the beam of the beam of electrons; and
a sample stage for receiving the beam of electrons, wherein a scan direction of the sample stage is along a second direction, orthogonal to the first direction of the BAA.

15. The column of claim 14 , wherein the pitch of the first column of openings of the BAA corresponds to twice the pitch of a target pattern of lines for orientation parallel with the second direction.

16. The column of claim 15 , wherein the pitch of the target pattern of lines is twice the line width of the target pattern of lines.

17. The column of claim 14 , wherein, when the sample stage is scanned along the second direction, the openings of the first column of openings of the BAA do not overlap with the openings of the second column of openings of the BAA.

18. The column of claim 14 , wherein, when the sample stage is scanned along the second direction, the openings of the first column of openings of the BAA slightly overlap with the openings of the second column of openings of the BAA.

19. The column of claim 14 , wherein the BAA is an array of physical apertures disposed in a thin slice of silicon.

20. The column of claim 19 , wherein one or more of the apertures of the first and second columns of apertures of the BAA has metal there around.

21. The column of claim 20 , wherein the metal comprises one or more electrodes for passing or steering a portion of the beam of electrons to a Faraday cup or blanking aperture housed in the column.

22. The column of claim 19 , wherein the BAA has 4096 apertures.

23. The column of claim 14 , wherein the shaping aperture is a one-dimensional shaping aperture.

24. The column of claim 14 , wherein the sample stage is rotatable by 90 degrees to accommodate alternating orthogonal layer patterning.

Assignees

• Intel Corp

Inventors

• Borodovsky Yan A
• Nelson Donald W
• Phillips Mark C

Classifications

• H10P76/2045

  Electron beam lithography processes · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• G03F9/70

  for microlithography (measuring printed patterns for monitoring overlay G03F7/70633 or focus G03F7/70641; projection system adjustment G03F7/70258; position control G03F7/70775) · CPC title

• G03F7/70633

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• H01J37/302

  Controlling tubes by external information, e.g. program control (H01J37/304 takes precedence) · CPC title