Surface-treated copper foil

Patent metadata

Field	Value
Publication number	US-10383222-B2
Application number	US-201715398126-A
Country	US
Kind code	B2
Filing date	Jan 4, 2017
Priority date	Jan 4, 2016
Publication date	Aug 13, 2019
Grant date	Aug 13, 2019

Abstract

To provide a surface-treated copper foil that is excellent in adhesiveness to an insulating substrate at ordinary temperature, and is capable of suppressing the formation of blister on application of a thermal load of reflow soldering to a copper-clad laminate board constituted by the copper foil. A surface-treated copper foil having a surface-treated surface, the surface-treated copper foil satisfying one or more of the following conditions (1) to (3): by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO2 conversion), (1) the N concentration is from 1.5 to 7.5 atomic %; (2) the C concentration is from 12 to 30 atomic %; and (3) the Si concentration is 3.1 atomic % or more and the O concentration is from 40 to 48 atomic %.

First claim

The invention claimed is:

1. A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising an N concentration of from 1.5 atomic % to 7.5 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

2. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises a C concentration of from 12 atomic % to 30 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

3. A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising a C concentration of from 12 atomic % to 30 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

4. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

5. The surface-treated copper foil according to claim 2 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

6. The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

7. A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

8. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

9. The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

10. The surface-treated copper foil according to claim 5 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

11. The surface-treated copper foil according to claim 7 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

12. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

13. The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

14. The surface-treated copper foil according to claim 5 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

15. The surface-treated copper foil according to claim 7 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

16. The surface-treated copper foil according to claim 10 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

17. The surface-treated copper foil according to claim 16 , wherein the surface-treated copper foil satisfies one or two of the following conditions (A) and (B):
(A) the surface-treated copper foil comprising an N concentration of from 3.7 atomic % to 6.4 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion;
(B) the surface-treated copper foil comprising a C concentration of from 21.6 atomic % to 23.8 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

18. The surface-treated copper foil according to claim 1 , wherein the surface-treated surface comprises a ten-point average surface roughness Rz of 1.5 μm or less.

19. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is a rolled copper foil or an electrolytic copper foil.

20. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is for attaching to a liquid crystal polymer.

21. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is for attaching to a polyimide resin.

22. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is used in a printed circuit board that is used under a high frequency exceeding 1 GHz.

23. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains, on a surface of the copper foil, one or more layers selected from the group consisting of a roughening treatment layer, a heat resistance treatment layer, a rust prevention treatment layer, a chromate treatment layer, and a silane coupling treatment layer.

24. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains, on a surface of the copper foil, one or more layers selected from the group consisting of a heat resistance treatment layer, a rust prevention treatment layer, a chromate treatment layer, and a silane coupling treatment layer.

25. The surface-treated copper foil according to claim 1 , wherein the surface-treat

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Miki Atsushi
• Fukuchi Ryo
• Arai Hideta

Classifications

• C25D3/12

  of nickel or cobalt · CPC title

• C22C9/00

  Alloys based on copper · CPC title

• H05K1/09 Primary

  Use of materials for the {conductive, e.g. } metallic pattern · CPC title

• C25D7/0614

  Strips or foils · CPC title

• H05K3/389

  by the use of a coupling agent, e.g. silane · CPC title