Device and method of manufacturing high-aspect ratio structures

Patent metadata

Field	Value
Publication number	US-10381651-B2
Application number	US-201515120232-A
Country	US
Kind code	B2
Filing date	Feb 20, 2015
Priority date	Feb 21, 2014
Publication date	Aug 13, 2019
Grant date	Aug 13, 2019

Abstract

An method for manufacturing a electronic device is provided having a current collector capable of a high specific charge collecting area and power, but is also achieved using a simple and fast technique and resulting in a robust design that may be flexed and can be manufactured in large scale processing. To this end the electronic device comprising an electronic circuit equipped with a current collector formed by a metal substrate having a face forming a high-aspect ratio structure of pillars having an interdistance larger than 600 nm. By forming the high-aspect structure in a metal substrate, new structures can be formed that are conformal to curvature of a macroform or that can be coiled or wound and have a robust design.

First claim

The invention claimed is:

1. A method of manufacturing a current collector with a high-aspect ratio structure of pillars formed in a metal substrate, wherein the method comprises: monolithically forming elongate and aligned nanopore structures on a face of the metal substrate; masking the nanopore structures with a micro-pattern mask arranged to forming the nanopore structured pillars having a minimum interdistance larger than 600 nm; and rendering the pillars electrically conductive; wherein the high-aspect ratio structure is formed by removing nanopore material in the micro-pattern thus forming nanopore micropillar structures.

2. A method according to claim 1 , wherein prior to removing nanopore material, the high-aspect ratio pillar structure is rendered electrically conductive by plating unmasked nanopore structures in a hole pattern thus forming plated nanopore pillar structures.

3. A method according to claim 2 , wherein the plating is electro-less or by electroplating.

4. A method according to claim 1 , wherein the high-aspect ratio pillar structure is formed by removing unmasked nanopore material in a dot pattern thus forming masked nanopore pillar structures having upstanding walls, and wherein the pillars are rendered electrically conductive by covering the pillar walls with a conductive layer.

5. A method according to claim 4 , wherein the covering is performed by Electro Chemical Deposition (ECD) or PVD or CVD or ALD, CSD.

6. A method according to claim 4 wherein the pillars are rendered electrically conductive by electro-reducing the unmasked nano-pore structure.

7. A method according to claim 1 , wherein the metal substrate is aluminium or titanium.

8. A method according to claim 1 , wherein the pillars are covered with subsequent layers to form a coating that is conformal to the pillars.

9. A method according to claim 8 , wherein the coating is a battery multilayer or a photovoltaic multilayer.

10. A method according to claim 9 wherein the multilayer comprises a solid state electrolyte layer.

11. A method according to claim 9 , further comprising covering the multilayer structure with a planarizing filler that planarizes the high-aspect ratio structure.

12. A method according to claim 1 , wherein the metal substrate is stacked on an organic foil.

13. A method according to claim 1 , wherein the current collector is manufactured in a roll-to-roll process.

14. An electronic device comprising a current collector having a high-aspect ratio structure of pillars formed in a metal substrate, monolithically formed of elongate and aligned nanopore pillar structures on a face of the metal substrate; and having a minimum interdistance larger than 600 nm; said nanopore pillars being electrically conductive.

15. An electronic device according to claim 14 wherein the metal substrate comprises aluminium or titanium, and wherein the high-aspect ratio structure comprises pillars having a radius of curvature larger than 50 nanometer.

16. An electronic device according to claim 15 , wherein the pillars are higher than 10 micrometer.

17. An electronic device according to claim 14 , wherein the pillars are formed in high-aspect ratio clusters that are separated by a grid of planar zones.

18. An electronic device according claim 14 , wherein the substrate is a metal foil having both faces forming a high-aspect ratio structure.

19. An electronic device according to claim 14 , wherein the high-aspect ratio structure is covered with a coating that is conformal to the pillars of the high-aspect ratio structure; wherein a gap is provided between conformally coated high-aspect ratio structures.

20. An electronic device according to claim 19 , wherein the coating is a battery multilayer or a photovoltaic multilayer or both.

Assignees

• TNO
• Imec Vzw

Inventors

• Unnikrishnan Sandeep
• Vereecken Philippe

Classifications

• H01M4/045

  Electrochemical coating; Electrochemical impregnation · CPC title

• H01G9/20

  Light-sensitive devices · CPC title

• Y02E10/52

  PV systems with concentrators · CPC title

• H01M4/0442

  Anodisation, Oxidation (electrolytic coating by anodisation C25D9/00) · CPC title

• H01M4/0428

  Chemical vapour deposition · CPC title