Block copolymer

Patent metadata

Field	Value
Publication number	US-10377894-B2
Application number	US-201515515812-A
Country	US
Kind code	B2
Filing date	Sep 30, 2015
Priority date	Sep 30, 2014
Publication date	Aug 13, 2019
Grant date	Aug 13, 2019

Abstract

The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

First claim

What is claimed is:

1. A block copolymer comprising a first block and a second block different from the first block,
wherein the first block comprises a linear or branched side chain of which a number of chain-forming atoms is 8 or more, wherein the number of chain forming atoms is a number of atoms constituting the longest linear structure in the side chain,
and wherein the first block exhibits peaks having a full width at half maximum of 5 degrees to 70 degrees at an azimuth angle ranging from −90 to −70 degrees and at an azimuth angle ranging from 70 to 90 degrees of a diffraction pattern of scattering vectors ranging from 12 nm −1 to 16 nm −1 in a grazing incidence wide angle X-ray scattering (GIWAXS) spectrum and wherein the azimuth angle is an angle when an out of plane diffraction pattern of the GIWAXS spectrum is set to be 0 degree.

2. The block copolymer of claim 1 , wherein the block copolymer exhibits a melting transition peak or an isotropic transition peak within a range from −80° C. to 200° C.

3. The block copolymer of claim 2 , wherein the block copolymer exhibits both of the melting transition peak and the isotropic transition peak.

4. The block copolymer of claim 3 , wherein a difference (Ti−Tm) between a temperature (Ti) at which the isotropic transition peak is shown and a temperature (Tm) at which the melting transition peak is shown is from 5° C. to 70° C.

5. The block copolymer of claim 3 , wherein a ratio (M/I) of an area (M) of the melting transition peak relative to an area (I) of the isotropic transition peak is from 0.1 to 500.

6. The block copolymer of claim 2 , wherein the melting transition peak is exhibited within a range from −10° C. to 55° C.

7. The block copolymer of claim 2 , wherein the first block comprises a side chain satisfying the Equation 1:
10° C.≤ Tm −12.25° C.× n+ 149.5° C.≤10° C.  [Equation 1]

wherein Tm is a temperature at which the melting transition peak is shown and n is the number of chain-forming atoms of the side chain.

8. The block copolymer of claim 1 , wherein an absolute value of a difference in surface energy between the first block and the second block is 10 mN/m or less.

9. The block copolymer of claim 1 , wherein the first or second block comprises an aromatic structure.

10. The block copolymer of claim 1 , wherein the first block and the second block comprise an aromatic structure.

11. The block copolymer of claim 1 , wherein the first block comprises an aromatic structure that does not have halogen atoms and the second block comprises an aromatic structure having halogen atom(s).

12. The block copolymer of claim 1 , wherein the first or second block comprises halogen atom.

13. The block copolymer of claim 1 , wherein the second block comprises halogen atom(s).

14. The block copolymer of claim 1 , wherein the first or second block comprises an aromatic structure to which the side chain is linked.

15. The block copolymer of claim 14 , wherein the side chain is linked to the aromatic structure via an oxygen atom or a nitrogen atom.

16. The block copolymer of claim 1 , wherein the first or second block comprises an aromatic structure substituted with halogen atom(s).

17. The block copolymer of claim 1 , wherein the first block comprises an aromatic structure to which the side chain is linked and the second block comprises an aromatic structure substituted with halogen atom(s).

18. The block copolymer of claim 1 , wherein the first block comprises a cyclic structure and the side chain is linked to the cyclic structure.

19. The block copolymer of claim 18 , wherein the cyclic structure does not comprise halogen atoms.

20. The block copolymer of claim 1 , wherein the second block comprises at least 3 halogen atoms.

21. The block copolymer of claim 20 , wherein the second block comprises a cyclic structure substituted with halogen atoms.

22. The block copolymer of claim 1 , wherein the first block comprises a unit represented by Formula 1 below:

wherein, R is a hydrogen or an alkyl group having 1 to 4 carbon atom(s), X is a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, a carbonyl group, an alkylene group, an alkenylene group, an alkynylene group, —C(═O)—X 1 — or —X 1 —C(═O)—, where the X 1 is an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group, and Y is a monovalent substituent including a ring structure to which the side chain is linked.

23. The block copolymer of claim 1 , wherein the second block comprises a unit represented by Formula 3 below:

wherein the X 2 is a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group, an alkynylene group, —C(═O)—X 1 — or —X 1 —C(═O)—, where the X 1 is a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group, and the W is an aryl group including at least one halogen atom.

24. A polymer layer including the block copolymer of claim 1 , wherein the block copolymer is self-assembled.

25. A process for preparing a polymer layer, including forming a polymer layer including the block copolymer of claim 1 on a substrate, wherein the block copolymer is self-assembled.

26. A pattern forming method including selectively eliminating the first or second block from the block copolymer of claim 1 , wherein the block copolymer is self-assembled in a polymer layer, wherein the polymer layer is on a substrate.

Assignees

• Lg Chemical Ltd

Inventors

• Lee Jeong Kyu
• Lee Je Gwon
• Song In Young
• Oh Sung Joon
• Kang Yeon Joo
• Yoon Sung Soo
• Kim Jung Keun

Classifications

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P95/064

  the removal being chemical etching · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• C08F220/301

  and one oxygen in the alcohol moiety · CPC title