Pressure sensor and pressure sensing method

Patent metadata

Field	Value
Publication number	US-9752941-B2
Application number	US-201314018505-A
Country	US
Kind code	B2
Filing date	Sep 5, 2013
Priority date	Sep 5, 2012
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.

First claim

What is claimed is:

1. A pressure sensor comprising:
a substrate;
a sensor thin film transistor (TFT) disposed on the substrate and comprising a gate insulating layer, wherein the gate insulating layer comprises an organic matrix in which piezoelectric inorganic nano-particles are dispersed;
a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and
a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense pressure based on the remnant polarization value.

2. The pressure sensor of claim 1 , wherein when an amplitude of the AC signal applied to the gate is V G amp , an amplitude of the drain current is I D amp , and an average drain current value is I D mean , the remnant polarization value is in proportion to a value of

V
G
amp

⁢

⁢

I
D
mean

I
D
amp

,

and the pressure sensor is configured to sense the pressure by using a variation in the remnant polarization value.

3. The pressure sensor of claim 1 , wherein the AC signal has a frequency ranging from about 0.001 Hz to about 1 GHz.

4. The pressure sensor of claim 1 , wherein a voltage amplitude of the AC signal ranges from 0.01 V to 100 V.

5. The pressure sensor of claim 1 , wherein the organic matrix comprises a piezoelectric organic material.

6. The pressure sensor of claim 5 , wherein the piezoelectric organic material is selected from P(VDF-TrFE), P(VDF-TrFE-CFE), and P(VDF-TrFE-CtFE).

7. The pressure sensor of claim 5 , wherein the organic matrix has a crystalline structure.

8. The pressure sensor of claim 5 , wherein the piezoelectric inorganic nano-particles are selected from the group consisting of gallium orthophosphate (GaPO 4 ), langasite (La 3 Ga 5 SiO 14 ), a quartz analogic crystal, barium titanate (BaTiO 3 ), lead titanate (PbTiO 3 ), lead zirconate titanate (Pb[Zr x Ti 1-x ]O 3 (0≦x≦1), potassium niobate (KNbO 3 ), lithium niobate (LiNbO 3 ), lithium tantalate (LiTaO 3 ), sodium tungstate (Na 2 WO 3 ), zinc oxide (Zn 2 O 3 ), Ba 2 NaNb 5 O 5 , Pb 2 KNb 5 O 15 , sodium potassium niobate ((K,Na)NbO 3 ), bismuth ferrite (BiFeO 3 ), sodium niobate (NaNbO 3 ), bismuth titanate (Bi 4 Ti 3 O 12 ), and sodium bismuth titanate (Na 0.5 Bi 0.5 TiO 3 ).

9. The pressure sensor of claim 1 , further comprising a switching TFT that is electrically connected to the sensor TFT, wherein a sensor pixel structure of the pressure sensor comprises one switching TFT and one sensor TFT.

10. The pressure sensor of claim 1 , wherein the organic matrix has a crystalline structure.

11. The pressure sensor of claim 10 , wherein the organic matrix is formed to have the crystalline structure through an annealing process which implements a temperature of 120° C. or higher.

12. The pressure sensor of claim 1 , wherein the substrate is a flexible substrate, wherein the substrate is formed of a material including polyimide.

13. A pressure sensing method comprising:
applying an alternating current (AC) signal to a gate of a sensor thin film transistor (TFT) comprising a piezoelectric gate insulating layer;
detecting a drain current from the sensor TFT, the drain current being generated in response to the AC signal;
obtaining a remnant polarization value based on the drain current; and
sensing a pressure based on the remnant polarization value,
wherein when an amplitude of the AC signal applied to the gate is V G amp , an amplitude of the drain current is I D amp , and an average drain current value is I D mean , the remnant polarization value is in proportion to a value of

V
G
amp

⁢

⁢

I
D
mean

I
D
amp

,

and the sensing the pressure comprises sensing the pressure by using a variation in the remnant polarization value.

14. The pressure sensing method of claim 13 , wherein the AC signal has a frequency from about 0.001 Hz to about 1 GHz.

15. The pressure sensing method of claim 13 , wherein a voltage amplitude of the AC signal ranges from 0.01 V to 100 V.

16. The pressure sensing method of claim 13 , wherein the piezoelectric gate insulating layer comprises an organic matrix, in which piezoelectric inorganic nano-particles are dispersed, wherein the organic matrix comprises a piezoelectric organic material.

17. The pressure sensing method of claim 16 , wherein the piezoelectric organic material is selected from P(VDF-TrFE), P(VDF-TrFE-CFE), and P(VDF-TrFE-CtFE).

18. The pressure sensing method of claim 16 , wherein the piezoelectric inorganic nano-particles are selected from the group consisting of gallium orthophosphate (GaPO 4 ), langasite (La 3 Ga 5 SiO 14 ), a quartz analogic crystal, barium titanate (BaTiO 3 ), lead titanate (PbTiO 3 ), lead zirconate titanate (Pb[Zr x Ti 1-x ]O 3 (0≦x≦1), potassium niobate (KNbO 3 ), lithium niobate (LiNbO 3 ), lithium tantalate (LiTaO 3 ), sodium tungstate (Na 2 WO 3 ), zinc oxide (Zn 2 O 3 ), Ba 2 NaNb 5 O 5 , Pb 2 KNb 5 O 15 , sodium potassium niobate ((K,Na)NbO 3 ), bismuth ferrite (BiFeO 3 ), sodium niobate (NaNbO 3 ), bismuth titanate (Bi 4 Ti 3 O 12 ), and sodium bismuth titanate (Na 0.5 Bi 0.5 TiO 3 ).

19. A pressure sensor comprising:
a substrate comprised of a flexible material;
a sensor thin film transistor (TFT) disposed on the substrate and comprising a gate insulating layer, wherein the gate insulating layer comprises a combination of an organic material and an inorganic material; and
a pressure sensing unit configured to obtain a remnant polarization value based on a drain current detected by the sensor TFT, and to sense pressure based on the remnant polarization value,
wherein when an amplitude of an AC signal applied to a gate of the sensor TFT is V G amp , an amplitude of the drain current is I D amp , and an average drain current value is I D mean , the remnant polarization value is in proportion to a value of

V
G
amp

⁢

⁢

I
D
mean

I
D
amp

Assignees

• Samsung Electronics Co Ltd
• Sungkyunkwan Univ Found For Corp Collaboration

Inventors

• Jeon Sang-Hun
• Park Jong-Jin
• Nguyen Thanh Tien
• Bae Ji-Hyun
• Byun Kyung-Eun
• Lee Nae-Eung
• Kim Do-Il
• Tran Quang Trung

Classifications

• G01L1/16 Primary

  using properties of piezoelectric devices · CPC title

• H01L29/84

  Electricity · mapped topic

• H10D48/50 Primary

  Devices controlled by mechanical forces, e.g. pressure · CPC title

• G01L9/06

  of piezo-resistive devices · CPC title