Display device using micro light emitting diode

Patent metadata

Field	Value
Publication number	US-10373985-B2
Application number	US-201715485545-A
Country	US
Kind code	B2
Filing date	Apr 12, 2017
Priority date	Apr 12, 2016
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

A display device includes a display substrate; a thin film transistor over the display substrate; a bank layer covering the thin film transistor, where an opening is defined through the bank layer; an emission layer in the opening and including a micro p-n diode; a first electrode electrically connected between the thin film transistor and the emission layer; a second electrode over the emission layer; and a sealing layer covering the second electrode. The thin film transistor and the emission layer are adjacent to each other in a horizontal direction of the display substrate.

First claim

What is claimed is:

1. A display device comprising:
a display substrate;
a thin film transistor over the display substrate, wherein the thin film transistor comprises a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode;
a bank layer covering the thin film transistor, wherein an upper surface of the bank layer is substantially planar, an opening is defined through the bank layer, and the opening is spaced apart from the semiconductor active layer of the thin film transistor when viewed from a plan view in a vertical direction of the display substrate;
an emission layer in the opening, wherein the emission layer comprises a micro p-n diode;
a first electrode electrically connected between the thin film transistor and the emission layer;
a second electrode over the emission layer and arranged to overlap the first electrode when viewed from the plan view in the vertical direction of the display substrate;
a mirror layer over the bank layer, wherein the mirror layer is arranged to overlap the thin film transistor when viewed from the plan view in the vertical direction of the display substrate, and wherein the mirror layer comprises a reflective material; and
a sealing layer covering the second electrode,
wherein the thin film transistor and the emission layer are adjacent to each other in a horizontal direction of the display substrate.

2. The display device of claim 1 , wherein
the source electrode or the drain electrode extend below the emission layer,
the first electrode is between the emission layer and an extension portion of the source electrode or the drain electrode,
the mirror layer is separated from the first electrode and is over the bank layer,
a color filter layer of a color corresponding to a sub-pixels is around the emission layer, and
the second electrode is over the color filter layer and is electrically connected to the emission layer.

3. The display device of claim 1 , wherein the mirror layer is defined by a portion extending from the first electrode.

4. The display device of claim 3 , wherein
the first electrode covers an edge of the source electrode or the drain electrode exposed via the opening and extends over the upper surface of the bank layer to overlap the thin film transistor,
the mirror layer is defined by an extension portion of the first electrode extending over the upper surface of the bank layer,
an insulating layer burying the emission layer extends over the bank layer,
the second electrode is over the insulating layer and is electrically connected to the emission layer, and
an opening is defined through the second electrode in a portion overlapping the mirror layer in the vertical direction of the display substrate.

5. The display device of claim 3 , wherein
the first electrode covers an edge of the source electrode or the drain electrode exposed via the opening and extends over the upper surface of the bank layer to overlap the thin film transistor in the vertical direction of the display substrate,
the mirror layer is defined by an extension portion of the first electrode extending over the upper surface of the bank layer,
an insulating layer burying the emission layer extends over the bank layer, and
the second electrode is over the insulating layer, is electrically connected to the emission layer, and has a stacked structure including the mirror layer and the insulating layer disposed between the mirror layer and the second electrode.

6. The display device of claim 5 , further comprising:
a lateral reflective layer, which reflects light irradiated to a lateral surface of the emission layer and is over a lateral surface of the emission layer.

7. The display device of claim 5 , wherein
a portion of the source electrode or the drain electrode extends below the emission layer,
an extension portion of the source electrode or the drain electrode has a ring shape, and
a portion of the insulating layer around the emission layer has a trench shape.

8. The display device of claim 3 , wherein
the first electrode covers an edge of the source electrode or the drain electrode exposed via the opening and extends over the upper surface of the bank layer to overlap the thin film transistor in the vertical direction of the display substrate,
the mirror layer is defined by an extension portion of the first electrode extending over the upper surface of the bank layer,
an insulating layer burying the emission layer is over the bank layer,
an opening is defined in the insulating layer in a portion overlapping the mirror layer in the vertical direction of the display substrate,
the second electrode is over the insulating layer, is electrically connected to the emission layer, and exposes the mirror layer when viewed in the vertical direction of the display substrate.

9. The display device of claim 8 , wherein
a portion of the source electrode or the drain electrode extends below the emission layer, and
an extension portion of the source electrode or the drain electrode is arranged in a zigzag pattern.

10. The display device of claim 1 , wherein
one of the gate electrode, the source electrode and the drain electrode of the thin film transistor extends below the emission layer,
the first electrode is defined by an extension portion of the one of the gate electrode, the source electrode and the drain electrode extending below the emission layer.

11. The display device of claim 10 , wherein
an insulating layer burying the emission layer extends over the bank layer,
the mirror layer is separated from the first electrode and is over the bank layer,
the second electrode is over the insulating layer and is electrically connected to the emission layer, and
the display device further comprises a lateral reflective layer, which reflects light irradiated to a lateral surface of the emission layer and is over a lateral surface of the emission layer.

12. The display device of claim 10 , wherein
the second electrode is over the bank layer and is electrically connected to the emission layer,
the mirror layer is separated from the first electrode and is over the second electrode, and
the display device further comprises a lateral reflective layer, which reflects light irradiated to a lateral surface of the emission layer and is over a lateral surface of the emission layer.

13. The display device of claim 12 , wherein an extension portion of the one of the semiconductor active layer, the gate electrode, the source electrode and the drain electrode is arranged in a zigzag pattern.

14. The display device of claim 1 , further comprising
a conductive layer, which is below the emission layer and connected to one of the semiconductor active layer, the gate electrode, the source electrode and the drain electrode of the thin film transistor,
wherein the first electrode is between the emission layer and the conductive layer, and
wherein the second electrode is electrically connected to the emission layer.

15. The display device of claim 14 , wherein
the conductive layer is in a same layer in which the one of the semiconductor active layer, the gate electrode, the source electrode and the drain electrode is arranged, and
the conductive layer is electrically connected to an extension portion of the one of the semiconductor active layer, the gate electrode, the source electrode and the drain electrode.

16. The display device of claim 14 , wherein the conductive layer is defined by an extension portion of the one of the semiconductor active layer, the gate electrode, the source electrode and the dra

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Minsoo
• Kim Mugyeom

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H01L33/60

  Electricity · mapped topic

• H01L27/1214

  Electricity · mapped topic

• H01L25/0753

  Electricity · mapped topic

• H01L27/124 Primary

  Electricity · mapped topic