Metallic material for electronic components and method for producing same, and connector terminals, connectors and electronic components using same

Patent metadata

Field	Value
Publication number	US-10373730-B2
Application number	US-201314416922-A
Country	US
Kind code	B2
Filing date	Jun 25, 2013
Priority date	Jul 25, 2012
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer being constituted with one or two or more selected from the constituent element group A and one or two selected from a constituent element group B, namely, the group consisting of Sn and In; and an upper layer formed on the intermediate layer, the upper layer being constituted with one or two selected from the constituent element group B and one or two or more selected from a constituent element group C, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir; wherein the thickness of the lower layer is 0.05 μm or more and less than 5.00 μm; the thickness of the intermediate layer is 0.01 μm or more and less than 0.40 μm; and the thickness of the upper layer is 0.02 μm or more and less than 1.00 μm.

First claim

The invention claimed is:

1. A metallic material for electronic components, comprising:
a base material;
a lower layer formed on the base material, the lower layer comprising one or two or more selected from a constituent element group A consisting of Ni, Cr, Mn, Fe, Co and Cu;
an intermediate layer formed on the lower layer, the intermediate layer consisting of one or two or more selected from the constituent element group A and one or two selected from a constituent element group B consisting of Sn and In; and
an upper layer formed on the intermediate layer, the upper layer comprising an alloy composed of one or two selected from the constituent element group B and one or two or more selected from a constituent element group C consisting of Ag, Au, Pt, Ru, Rh, Os and Ir,
wherein the thickness of the lower layer is 0.05 μm or more and less than 5.00 μm; the thickness of the intermediate layer is 0.01 μm or more and less than 0.40 μm; and the thickness of the upper layer is 0.02 μm or more and less than 1.00 μm, and
the upper layer comprises the metal(s) of the constituent element group B in a content of 10 to 50 at %,
the minimum thickness (μm) of the upper layer is 50% or more of the thickness (μm) of the upper layer, and
the maximum value (μm) of the elevation differences between the adjacent hills and valleys in the profile of the interface between the upper layer and the intermediate layer is 50% or less of the thickness (μm) of the upper layer.

2. The metallic material for electronic components according to claim 1 , wherein on the surface of the upper layer, a region where the total atomic concentration (at %) of the constituent elements of group B≥ the total atomic concentration (at %) of the constituent elements of group C and the atomic concentration of O≥10 at % is present in the region of 0.02 μm or less in depth from the surface.

3. The metallic material for electronic components according to claim 1 , wherein a ζ(zeta)-phase being a Sn—Ag alloy and/or an ε(epsilon)-phase being a Sn—Ag alloy is present.

4. The metallic material for electronic components according to claim 3 , wherein β-Sn being a Sn single phase is further present.

5. The metallic material for electronic components according to claim 1 , wherein the intermediate layer includes a metal(s) of the constituent element group B in a content of 35 at % or more.

6. The metallic material for electronic components according to claim 1 , wherein in the intermediate layer, Ni 3 Sn 4 and Ni 3 Sn 2 are present.

7. The metallic material for electronic components according to claim 1 , wherein in the intermediate layer, Ni 3 Sn 4 and β Sn being a Sn single phase are present.

8. The metallic material for electronic components according to claim 1 , wherein the thickness ratio between the upper layer and the intermediate layer is such that the upper layer: the intermediate layer =9:1 to 3:7.

9. The metallic material for electronic components according to claim 1 , wherein in the range from the upper layer to the intermediate layer, exclusive of the range of 0.03 μm from the outermost surface of the upper layer, C, S and O are each included in a content of 2 at % or less.

10. The metallic material for electronic components according to claim 1 , wherein the indentation hardness of the surface of the upper layer, being the hardness obtained by a nanoindentation hardness test indenting the surface of the upper layer with a load of 10 mN, is 1000 MPa or more.

11. The metallic material for electronic components according to claim 1 , wherein the indentation hardness measured from the surface of the upper layer, being the hardness obtained by a nanoindentation hardness test indenting the surface of the upper layer with a load of 10 mN, is 10000 MPa or less.

12. The metallic material for electronic components according to claim 1 , wherein in the lower layer the content of the metal(s) of the constituent element group A is 50% by mass or more in terms of the total content of Ni, Cr, Mn, Fe, Co and Cu, and one or two or more selected from the group consisting of B, P, Sn and Zn are further included.

13. The metallic material for electronic components according to claim 1 , wherein the indentation hardness of the cross section of the lower layer, being the hardness obtained by a nanoindentation hardness test indenting the cross section of the lower layer with a load of 10 mN is 10000 MPa or less.

14. The metallic material for electronic components according to claim 1 , wherein the intermediate layer comprises Ni 3 Sn and Ni 3 Sn 2 .

15. The metallic material for electronic components according to claim 1 , wherein the intermediate layer comprises Ni 3 Sn 2 .

16. The metallic material for electronic components according to claim 1 , wherein the intermediate layer comprises Ni 3 Sn 4 .

17. The metallic material for electronic components according to claim 1 , further comprising, between the lower layer and the intermediate layer, a layer comprising the alloy of the metal(s) of the constituent element group A and the metal(s) of the constituent element group C.

18. The metallic material for electronic components according to claim 1 , wherein P is deposited on the surface of the upper layer, and the deposition amount of P is 1×10 −11 to 4×10 −8 mol/cm 2 .

19. The metallic material for electronic components according to claim 18 , wherein in an XPS analysis performed for the upper layer, with l(P2s) denoting the photoelectron detection intensity due to the 2S orbital electron of P to be detected and l(N1s) denoting the photoelectron detection intensity due to the 1S orbital electron of N to be detected, the relation 0.1≤I(P2s)/I(N1s)≤1 is satisfied.

20. The metallic material for electronic components according to claim 18 , wherein in an XPS analysis performed for the upper layer, with I(P2s) denoting a photoelectron detection intensity due to a 2S orbital electron of P to be detected and I(N1s) denoting a photoelectron detection intensity due to a 1S orbital electron of N to be detected, the relation 1≤I(P2s)/I(N1s) ≤50 is satisfied.

21. A method for producing the metallic material for electronic components according to claim 18 , the metallic material comprising:
a base material;
a lower layer formed on the base material, the lower layer comprising one or two or more selected from a constituent element group A consisting of Ni, Cr, Mn, Fe, Co and Cu;
an intermediate layer formed on the lower layer, the intermediate layer consisting of one or two or more selected from the constituent element group A and one or two selected from a constituent element group B consisting of Sn and In; and
an upper layer formed on the intermediate layer, the upper layer comprising an alloy composed of one or two selected from the constituent element group B and one or two or more selected from a constituent element group C consisting of Ag, Au, Pt, Ru, Rh, Os and Ir, and
the upper layer comprises the metal(s) of the constituent element group B in a content of 10 to 50 at %,
the minimum thickness (μm) of the upper layer is 50% or more of the thickness (μm) of the upper layer, and
the maximum value (μm) of the elevation differences between the adjacent hills and valleys in the profile of the interface between the upper layer and the intermediate layer is 50% or less of the thickness (μm) of the upper layer;
wherein the surface of the metallic material is surface-treated with a phosphoric acid ester-based solution including at least one of the phosphoric acid

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Shibuya Yoshitaka
• Fukamachi Kazuhiko
• Kodama Atsushi

Classifications

• Y10T428/12722

  Next to Group VIII metal-base component · CPC title

• C25D3/18

  Heterocyclic compounds · CPC title

• C25D3/46

  of silver · CPC title

• C23C22/58

  Treatment of other metallic material · CPC title

• C25D7/00

  Electroplating characterised by the article coated · CPC title