Method of manufacturing patterned substrate

Patent metadata

Field	Value
Publication number	US-10370529-B2
Application number	US-201515514929-A
Country	US
Kind code	B2
Filing date	Sep 30, 2015
Priority date	Sep 30, 2014
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.

First claim

What is claimed is:

1. A method of manufacturing a patterned substrate, comprising:
forming a polymer film on a surface of an oxygen plasma-treated substrate, wherein the polymer film comprises a block copolymer that includes a first block and a second block, and the block copolymer forms a self-assembly structure, where an interface between a domain formed by the first block and a domain formed by the second block is vertical to a surface of the substrate, and wherein the first block includes a ring structure substituted with a side chain having 8 or more chain-forming atoms, and the ring structure is linked to a main chain of the first block as a side chain, wherein the ring structure is directly linked or is linked to the main chain via a linker and the linker is an oxygen atom, a sulfur atom, —S(═O) 2 —, a carbonyl group, —C(═O)—X 1 — or —X 1 —C(═O)—, where the X 1 is an oxygen atom or a sulfur atom.

2. The method of claim 1 , wherein the substrate is a metal substrate.

3. The method of claim 1 , wherein the substrate includes one or more metals selected from the group consisting of gold, copper, titanium, nickel, silver, aluminum, germanium, tungsten, tin, antimony, indium, cadmium, palladium, lead and platinum, or an oxide, nitride or sulfide of the one or more metals.

4. The method of claim 1 , wherein the oxygen plasma is applied with RF power of 30 to 2000 W, a process pressure of 5 to 300 mTorr and an oxygen flow rate of 20 to 100 sccm.

5. The method of claim 1 , wherein the polymer film is formed in contact with the surface of the oxygen plasma-treated substrate.

6. The method of claim 1 , wherein the self-assembly structure is a lamellar structure.

7. The method of claim 1 , wherein the second block is different from the first block, in which
the first block shows a peak at an azimuthal angle of −90 to −70 degrees or 70 to 90 degrees of a diffraction pattern of a scattering vector of 12 to 16 nm −1 in a GIWAXS spectrum.

8. The method of claim 1 , wherein the second block has a different chemical structure from the first block,
in which the first block shows a melting transition peak or isotropic transition peak in a range of −80 to 200° C. through differential scanning calorimetry (DSC) analysis.

9. The method of claim 1 , wherein the second block has a different chemical structure from the first block,
in which the first block shows a peak having a full width at half maximum (FWHM) of 0.2 to 0.9 nm −1 in a scattering vector (q) range of 0.5 to 10 nm −1 through XRD analysis.

10. The method of claim 1 , wherein the second block has a different chemical structure from the first block,
the number of chain-forming atoms (n) of the side chain of the first block and the scattering vector (q) obtained by XRD analysis performed on the first block, satisfy Equation 2:
3 to 5 nm −1 =nq /(2×π)  [Equation 2]

where n is the number of chain-forming atoms of the side chain of the first block, q is the smallest scattering vector (q) in which a peak is shown through XRD analysis performed on a block including the side chain of the first block, or a scattering vector (q) showing a peak having the largest peak area.

11. The method of claim 1 , wherein the second block has a different chemical structure from the first block, in which the absolute value of a difference in surface energy between the first block and the second block is 10 mN/m or less.

12. The method of claim 1 , wherein the second block has a different chemical structure from the first block, in which the absolute value of a difference in density between the first block and the second block is 0.25 g/cm 3 or more.

13. The method of claim 1 , wherein the second block is different from the first block, in which a volume fraction of the first block is in a range of 0.2 to 0.6, and a volume fraction of the second block is in a range of 0.4 to 0.8.

14. The method of claim 1 , wherein the ring structure does not include a halogen atom.

15. The method of claim 1 , wherein the second block of the block copolymer includes 3 or more halogen atoms.

16. The method of claim 15 , wherein the second block includes a ring structure, and the halogen atom is substituted in the ring structure.

17. The method of claim 1 , wherein the first block has the unit represented by Formula 1:

where R is a hydrogen or an alkyl group, X is a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, a carbonyl group, —C(═O)—X 1 — or —X 1 —C(═O)—, in which X 1 is an oxygen atom, or a sulfur atom, and Y is the ring structure substituted with the side chain having 8 or more chain-forming atoms.

18. The method of claim 17 , wherein Y of Formula 1 is represented by Formula 2:
-P-Q-Z  [Formula 2]

where P is an arylene group or a cycloalkylene group, Q is a single bond, an oxygen atom or —NR 3 —, in which R 3 is a hydrogen, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group or an aryl group, and Z is the side chain having 8 or more chain-forming atoms.

19. The method of claim 18 , wherein P of Formula 2 is an arylene group having 6 to 12 carbon atoms.

20. The method of claim 1 , wherein the first block has the unit represented by Formula 3:

where R is a hydrogen or an alkyl group having 1 to 4 carbon atoms, X is a single bond, an oxygen atom, —C(═O)—O— or —O—C(═O)—, P is an arylene group, Q is an oxygen atom or —NR 3 —, in which R 3 is a hydrogen, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group or an aryl group, and Z is a linear chain having 8 or more chain-forming atoms.

21. The method of claim 1 , further comprising:
selectively removing any one block of the block copolymer, which forms a self-assembly structure.

22. A method of manufacturing a patterned substrate, comprising:
forming a polymer film on a surface of an oxygen plasma-treated substrate, wherein the polymer film comprises a block copolymer that includes a first block and a second block, and the block copolymer forms a self-assembly structure, where an interface between a domain formed by the first block and a domain formed by the second block is vertical to a surface of the substrate, and wherein the first block includes a ring structure substituted with a side chain having 8 or more chain-forming atoms, and the second block has the unit represented by Formula 5:

where B is a monovalent substituent having an aromatic structure including one or more halogen atoms.

23. The method of claim 21 , further comprising:
etching the substrate, after one block of the block copolymer is selectively removed.

24. The method of claim 22 , further comprising:
selectively removing any one block of the block copolymer, which forms a self-assembly structure.

25. The method of claim 24 , further comprising:
etching the substrate, after one block of the block copolymer is selectively removed.

Assignees

• Lg Chemical Ltd

Inventors

• Ku Se Jin
• Lee Mi Sook
• Ryu Hyung Ju
• Kim Jung Keun
• Yoon Sung Soo
• Park No Jin
• Lee Je Gwon
• Choi Eun Young

Classifications

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P95/064

  the removal being chemical etching · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• C08F220/301

  and one oxygen in the alcohol moiety · CPC title