Manufacturable laser diode

US10367334B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10367334-B2
Application numberUS-201615176076-A
CountryUS
Kind codeB2
Filing dateJun 7, 2016
Priority dateFeb 10, 2014
Publication dateJul 30, 2019
Grant dateJul 30, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

First claim

Opening claim text (preview).

What is claimed is: 1. An intermediate structure of a laser device, comprising: an epitaxial structure comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region; a gallium and nitrogen containing substrate; and a single sacrificial region disposed between the n-type cladding region of the epitaxial structure and the gallium and nitrogen containing substrate, the single sacrificial region having a narrower lateral width than each of the n-type cladding region, the active region, and the p-type cladding region. 2. The intermediate structure of claim 1 wherein the epitaxial structure comprises at least one of GaN, AlN, InN, InGaN, AlGaN, InAlN, InAlGaN, or one or more of AlAs, GaAs, GaP, InP, AlP, AlGaAs, AlInAs, InGaAs, AlGaP, AlInP, InGaP, AlInGaP, AlInGaAs, or AlInGaAsP.

Assignees

Inventors

Classifications

  • between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

  • the connected ends being wedge-shaped · CPC title

  • the connected ends being ball-shaped · CPC title

  • batch processes · CPC title

  • of die-attach connectors · CPC title

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What does patent US10367334B2 cover?
A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial ma…
Who is the assignee on this patent?
Soraa Laser Diode Inc
What technology area does this patent fall under?
Primary CPC classification H01S5/4093. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 30 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).