Gallium and nitrogen containing laser device having confinement region

Patent metadata

Field	Value
Publication number	US-9520695-B2
Application number	US-201414480398-A
Country	US
Kind code	B2
Filing date	Sep 8, 2014
Priority date	Oct 18, 2013
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

In an example, the present invention provides a method for fabricating a laser diode device. The method includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

First claim

What is claimed is:

1. A method for fabricating a laser diode device comprising:
providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material;
bonding the interface region to a handle substrate;
subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member; and
forming a ridge waveguide region in or overlying the n-type gallium and nitrogen containing material to form an n-type ridge structure; forming a conductive oxide region overlying the n-type gallium and nitrogen containing material; and forming a metal material overlying the first transparent conductive oxide material; wherein the first transparent conductive oxide material is comprised of indium tin oxide or zinc oxide, and wherein the handle substrate is selected from a semiconductor, a metal, or a dielectric or combinations thereof.

2. The method of claim 1 , wherein the interface region is comprised of metal, a semiconductor and/or another transparent conductive oxide; wherein the energy source is selected from a light source, a chemical source, a thermal source, or a mechanical source, and their combinations; wherein the interface region comprises a contact material;
wherein the release material is selected from a semiconductor, a metal, or a dielectric; and
wherein the active region comprises a plurality of quantum well regions; wherein the release material is selected from GaN, InGaN, AlInGaN, or AlGaN such that the gallium and nitrogen containing substrate member is released using PEC etching.

3. The method of claim 1 , forming a second transparent conductive oxide material overlying an exposed portion of the n-type gallium and nitrogen containing material such that the active region is configured between the first transparent conductive oxide material and the second conductive oxide material to cause an optical guiding effect within the active region.

4. The method of claim 1 , further comprising forming an n-type contact material overlying an exposed portion of the n-type gallium and nitrogen containing material or forming an n-type contact material overlying a conductive oxide material overlying an exposed portion of the n-type gallium and nitrogen containing material.

5. The method of claim 1 , further comprising forming an n-type contact region overlying an exposed portion of the n-type gallium and nitrogen containing material; forming a patterned transparent oxide region overlying a portion of the n-type contact region; and forming the metal material overlying the patterned transparent oxide region.

6. The method of claim 1 , further comprising forming an n-type contact region overlying an exposed portion of the n-type gallium and nitrogen containing material; forming a patterned dielectric region overlying a portion of the n-type contact region; and forming the metal material overlying the patterned dielectric region; wherein the patterned dielectric region is comprised of silicon oxide or silicon nitride.

7. The method of claim 1 , wherein the handle substrate is selected from a silicon wafer or a gallium arsenide wafer or an indium phosphide wafer; wherein the bonding comprising thermal bonding, plasma activated bonding, anodic bonding, chemical bonding, or combinations thereof.

8. The method of claim 1 , wherein surface region of the gallium and nitrogen containing substrate is configured in a semipolar, polar, or non-polar orientation.

9. The method of claim 1 , further comprising forming a laser cavity oriented in a c-direction or a projection of a c-direction and forming a pair of cleaved facets using a cleave propagated through both the handle substrate material and the gallium and nitrogen containing material.

10. The method of claim 1 , further comprising forming a laser cavity oriented in a c-direction or a projection of a c-direction and forming a pair of etched facets.

11. The method of claim 1 , wherein the handle substrate is an indium phosphide substrate material; and further comprising separating a plurality of laser dice by initiating a cleaving process on the indium phosphide substrate material.

12. The method of claim 1 , wherein the handle substrate is a gallium arsenide substrate material; and further comprising separating a plurality of laser dice by initiating a cleaving process on the gallium arsenide substrate material.

13. The method of claim 1 , further comprising separating a plurality of laser dice by initiating a cleaving process on the handle substrate.

14. A method for fabricating a laser diode device comprising:
providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material;
bonding the interface region to a handle substrate; and
subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member;
forming a ridge structure, and forming a second transparent conductive oxide material overlying an exposed portion of the n-type gallium and nitrogen containing material such that the active region is configured between the first transparent conductive oxide material and the second transparent conductive oxide material to cause an optical guiding effect within the active region.

15. The method of claim 14 , wherein the energy source is selected from a light source, a chemical source, a thermal source, or a mechanical source, and their combinations; wherein the interface region comprises a contact region; wherein the interface region is comprised of a metal, a semiconductor, or a transparent conductive oxide;
wherein the release material is selected from a semiconductor, a metal, or a dielectric; wherein the active region comprises a plurality of quantum well regions;
wherein the handle substrate is selected from a semiconductor, a metal, or a dielectric or combinations thereof;
wherein the bonding comprising thermal bonding, plasma activated bonding, anodic bonding, chemical bonding, or combinations thereof;
wherein the surface region of the gallium and nitrogen containing substrate is configured in a semipolar, polar, or non-polar orientation; and
wherein the energy source comprises a photochemical etching process.

16. A method for fabricating a laser diode device comprising:
providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide region overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide region;

Assignees

• Soraa Laser Diode Inc

Inventors

• Hsu Po Shan
• Mclaurin Melvin
• Raring James W
• Stzein Alexander
• Buller Benyamin

Classifications

• H01S5/04253

  having specific optical properties, e.g. transparent electrodes · CPC title

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/0215

  Bonding to the substrate · CPC title

• H01S5/0217 Primary

  Removal of the substrate · CPC title

• H01S5/0202

  Cleaving · CPC title