Cross-point memory and methods for fabrication of same

Patent metadata

Field	Value
Publication number	US-10367033-B2
Application number	US-201816112570-A
Country	US
Kind code	B2
Filing date	Aug 24, 2018
Priority date	Nov 21, 2013
Publication date	Jul 30, 2019
Grant date	Jul 30, 2019

Abstract

A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.

First claim

What is claimed is:

1. A method, comprising:
forming a first conductive line and a second conductive line extending in a first direction, the first conductive line and the second conductive line separated by a space;
covering, with a liner material, sidewalls of the first conductive line and the second conductive line and a surface extending between the sidewalls;
depositing a dielectric material over the liner material, wherein a first sidewall and a second sidewall of the dielectric material are in contact with the liner material; and
forming a pillar of a memory cell stack on the first conductive line or the second conductive line after depositing the dielectric material.

2. The method of claim 1 , further comprising:
depositing a pillar liner in contact with a plurality of side surfaces of the pillar, wherein the pillar liner is in contact with the dielectric material and the liner material.

3. The method of claim 2 , further comprising:
depositing a pillar insulating material in contact with the pillar liner, wherein the pillar insulating material is different than the pillar liner.

4. The method of claim 1 , further comprising:
patterning a third conductive line over the pillar, the third conductive line extending in a second direction that intersects the first direction.

Assignees

• Micron Technology Inc

Inventors

• Donghi Ombretta
• Ravasio Marcello
• Sciarrillo Samuele
• Somaschini Roberto

Classifications

• H01L45/1675

  Electricity · mapped topic

• H01L45/144

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L27/2427

  Electricity · mapped topic

• H01L27/2445

  Electricity · mapped topic