Select device for memory cell applications
US-2016329377-A1 · Nov 10, 2016 · US
Memory cells and memory cell formation methods using sealing material
US9136307B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136307-B2 |
| Application number | US-201213369654-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 9, 2012 |
| Priority date | Feb 9, 2012 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
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Memory cells, arrays of memory cells, and methods of forming the same with sealing material on sidewalls thereof are disclosed herein. One example of forming a memory cell includes forming a stack of materials, forming a trench to a first depth in the stack of materials such that a portion of at least one of the active storage element material and the active select device material is exposed on sidewalls of the trench. A sealing material is formed on the exposed portion of the at least one of the active storage element material and the active select device material and the trench is deepened such that a portion of the other of the at least one of the active storage element material and the active select device material is exposed on the sidewalls of the trench.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a memory cell, comprising: forming a stack of materials on a conductive material, the stack of materials comprising: an active storage element material in direct contact with and between a first electrode material and a second electrode material; an active select device material in direct contact with and between the second electrode material and a third electrode material; and the conductive material associated with a conductive lin…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9136307B2 cover?
- Memory cells, arrays of memory cells, and methods of forming the same with sealing material on sidewalls thereof are disclosed herein. One example of forming a memory cell includes forming a stack of materials, forming a trench to a first depth in the stack of materials such that a portion of at least one of the active storage element material and the active select device material is exposed on…
- Who is the assignee on this patent?
- Pellizzer Fabio, Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L27/2427. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).